350MW Search Results

350MW Result Highlights (5)

Part	Manufacturer	Description
LM4819MBD/NOPB	Texas Instruments	350mW Audio Power Amplifier with Shutdown Mode
LM4819MMX/NOPB	Texas Instruments	350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85
LM4819MX/NOPB	Texas Instruments	350mW Audio Amplifier with Shutdown Mode 8-SOIC -40 to 85
LM4818MX/NOPB	Texas Instruments	350mW Audio Power Amplifier with Shutdown Mode 8-SOIC -40 to 85
LM4819MM/NOPB	Texas Instruments	350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85

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Eaton Cutler-Hammer E2KW3350MWW (ALTERNATE: E2KW3350MWW) 1200V MINING MCCB 3P 350A MAG ONLY 1250-2500A TRIP RANGE \| Eaton - Cutler Hammer E2KW3350MWW
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RS	E2KW3350MWW (ALTERNATE: E2KW3350MWW)	Bulk		5 Weeks	1	1 $10021.53 10 $9520.46 100 $9520.46 1000 $9520.46 10000 $9520.46	Get Quote
ROHM Semiconductor RK7002BMT116 MOSFETs 2.5V Drive Nch MOSFET
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TTI	RK7002BMT116	Reel	1,383,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0228	Buy Now
Vishay Intertechnologies 1N4148W-E3-08 Small Signal Switching Diodes 100V Io/150mA
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TTI	1N4148W-E3-08	Reel	255,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0217	Buy Now
Vishay Intertechnologies 2N7002K-T1-GE3 MOSFETs 60V Vds 20V Vgs SOT-23
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TTI	2N7002K-T1-GE3	Reel	138,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Vishay Intertechnologies TP0610K-T1-E3 MOSFETs -60V Vds 20V Vgs SOT-23
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TTI	TP0610K-T1-E3	Reel	93,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.119	Buy Now

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350MW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: LM4819 LM4819 350mW Audio Power Amplifier with Shutdown Mode Literature Number: SNAS133C LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load	Original	LM4819 LM4819 350mW SNAS133C 350mWRMS	PDF
ray 40 Abstract: No abstract text available Text: Plug-In RAY-3+ RAY-3 Frequency Mixer Level 23 LO Power +23 dBm 0.07 to 200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • excellent conversion loss, 5.53 dB typ.	Original	350mW 2002/95/EC) ray 40	PDF
28438 Abstract: M121747 Text: Coaxial Frequency Mixer ZAY-1+ Level 23 LO Power +23 dBm 5 to 500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.57 dB typ. • high L-R isolation, 40 dB typ. L-R & L-I	Original	350mW 2002/95/EC) 28438 M121747	PDF
DEVICE MARKING CODE table Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A Text: BZX84C43 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: BZX84C43 BZX84C47 BZX84C51 Features • · · · Planar Die Construction 350mW Power Dissipation Zener Voltages from 43V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A · · ·	Original	BZX84C43 BZX84C51 350mW BZX84C47 OT-23 OT-23, J-STD-020A DEVICE MARKING CODE table 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A	PDF
MMBZ5223B Abstract: Zener Diode SOT-23 marking kh5 MMBZ5221B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B Text: MMBZ5221B - MMBZ5259B 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: MMBZ5221B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5235B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5240B MMBZ5241B MMBZ5242B MMBZ5243B MMBZ5245B MMBZ5246B MMBZ5248B MMBZ5250B	Original	MMBZ5221B MMBZ5259B 350mW MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B Zener Diode SOT-23 marking kh5 MMBZ5229B MMBZ5230B MMBZ5231B	PDF
Untitled Abstract: No abstract text available Text: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and	Original	350mW DO-35 MIL-STD-202, DO-35	PDF
Untitled Abstract: No abstract text available Text: New Au d i o I n t e r fa c e I C A N 2 9 0 6 F J M • Overview 12 22 34 33 11 0.40 0.10 SEATING PLANE 11 44 0.48 5.00±0.10 12 44 (1.10) 0. 1 22 ■ Features ●Speaker amplifier. • BTL amplifier (350mW 8Ω Vcc=3.3V) ●Built-in power-save function.	Original	350mW AN2906FJM	PDF
all type zener diode code voltage Abstract: CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619 Text: Central CMPZ4614 THRU CMPZ4627 TM Semiconductor Corp. SURFACE MOUNT 350mW LOW NOISE SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4614 Series types are high quality silicon zener diodes designed for low leakage, low current and low noise applications.	Original	CMPZ4614 CMPZ4627 350mW OT-23 200mA CMPZ4622* CMPZ4623 CMPZ4624* CMPZ4625 all type zener diode code voltage CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619	PDF
Untitled Abstract: No abstract text available Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	KST5551 350mW OT-23 2N5551	PDF
MMBT3906 UTC Abstract: No abstract text available Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES Collector-Emitter Voltage: VCEO=40V Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )	Original	MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC	PDF
T9SV1K15-12 Abstract: No abstract text available Text: General Purpose Relays Power Relays Potter & Brumfield Power PCB Relay T9S Solar n 1 pole 35A, 1 form A NO contact gap >1.5mm n 350mW hold power n Ambient temperature up to 85°C at 35A n The appliance is able to meet VDE V 0126-1-1 n Product in accordance to IEC 60335-1	Original	n350mW nEN61095: 2500Vrms 4000Vrms E22575 T9SV1K15-12 12VDC T9SV1K15-12	PDF
Untitled Abstract: No abstract text available Text: MMBD4448H 0.25A Surface-mount Switching Diode Voltage range 80 Volts 350mW Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications	Original	MMBD4448H 350mW OT-23 OT-23,	PDF
Untitled Abstract: No abstract text available Text: Product specification BZX84C27 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C27 OT-23 350mW	PDF
Untitled Abstract: No abstract text available Text: Product specification BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C7V5 OT-23 350mW	PDF

Untitled Abstract: No abstract text available Text: Product specification BZX84C4V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C4V3 OT-23 350mW	PDF
BZX84C18 Abstract: No abstract text available Text: Product specification BZX84C18 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C18 OT-23 350mW BZX84C18	PDF
Untitled Abstract: No abstract text available Text: Product specification BZX84C3V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C3V3 OT-23 350mW	PDF
Untitled Abstract: No abstract text available Text: Product specification BZX84C16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C16 OT-23 350mW	PDF
Untitled Abstract: No abstract text available Text: Product specification BZX84C2V4 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C2V4 OT-23 350mW	PDF
Untitled Abstract: No abstract text available Text: Product specification BZX84C11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C11 OT-23 350mW	PDF
Untitled Abstract: No abstract text available Text: Product specification BZX84C20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	BZX84C20 OT-23 350mW	PDF
65060 Abstract: No abstract text available Text: Coaxial ZMY-2+ ZMY-2 Frequency Mixer Level 23 LO Power +23 dBm 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.89 dB typ. • high isolation, 40 dB typ. L-R, 35 dB typ. L-I	Original	350mW 2002/95/EC) 65060	PDF
LM4819 Abstract: LM4819M LM4819MM M08A Text: LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load or 300mWRMS output power into an 8Ω load with 10%	Original	LM4819 350mW LM4819 350mWRMS 300mWRMS LM4819M LM4819MM M08A	PDF
ZFY-11-S Abstract: ZFY-11 Text: Coaxial Frequency Mixer ZFY-11 Level 23 LO Power +23 dBm 10 to 2400 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 7.40 dB typ. • wideband, 10 to 2400 MHz	Original	ZFY-11 350mW ZFY-11-S ZFY-11-S ZFY-11	PDF

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350MW Search Results

350MW Result Highlights (5)

350MW Price and Stock

Eaton Cutler-Hammer E2KW3350MWW (ALTERNATE: E2KW3350MWW)

ROHM Semiconductor RK7002BMT116

Vishay Intertechnologies 1N4148W-E3-08

Vishay Intertechnologies 2N7002K-T1-GE3

Vishay Intertechnologies TP0610K-T1-E3

350MW Datasheets Context Search

Untitled

ray 40

28438

DEVICE MARKING CODE table

MMBZ5223B

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all type zener diode code voltage

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MMBT3906 UTC

T9SV1K15-12

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BZX84C18

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65060

LM4819

ZFY-11-S