3423 DIODE Search Results

Contextual Info: Final Electrical Specifications LTC3423/LTC3424 Low Output Voltage, 3MHz Micropower Synchronous Boost Converters U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.5V to 5.5V Adjustable Output Voltage Synchronous Rectification: Up to 95% Efficiency 1A Switch Current LTC3423 or

MBRM120T3

Abstract: PWM IC 8 PIN 3423 PWM IC 3423 cd43 sumida CDRH3D16-4R7M 3423 3423 pwm 8 pin CD43-2R2M JMK212BJ225MG JMK325BJ226MM
Contextual Info: LTC3423/LTC3424 Low Output Voltage, 3MHz Micropower Synchronous Boost Converters DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.5V to 5.5V Adjustable Output Voltage Synchronous Rectification: Up to 95% Efficiency 1A Switch Current LTC3423 or

PWM IC 8 PIN 3423

Abstract: PWM IC 3423
Contextual Info: LTC3423/LTC3424 Low Output Voltage, 3MHz Micropower Synchronous Boost Converters DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ 1.5V to 5.5V Adjustable Output Voltage Synchronous Rectification: Up to 95% Efficiency 1A Switch Current LTC3423 or

CU20025ECPB-w1J

Abstract: cu20025 "NORITAKE Vacuum Fluorescent Display" cu20025ecpb w1j CU20025ECPB NOISE FILTERS USED IN VFD 2xh diode noritake vfd VFD MANUAL vfd 240
Contextual Info: Revised Date: Feb 03, 2009 APPLICATION NOTES Issued Date: Feb. 04, 2008 APN 1100-01 CU20025ECPB-W1J Application Note INDEX 1. BUS Setup 2. Initializing procedure 3. DDRAM address for CU20025ECPB-W1J 4. FAQ Frequently Asked Questions 5. Comparisons between U-version modules and LCDs

CU20025ECPB-w1J

Abstract: "NORITAKE Vacuum Fluorescent Display" CU20025ECPB cu20025 cu20025ecpb w1j vfd advantage noritake vfd 2xh diode Noritake application note
Contextual Info: Revised Date: July 28, 2009 APPLICATION NOTES Issued Date: Feb. 04, 2008 APN 1100-02 CU20025ECPB-W1J Application Note INDEX 1. BUS Setup 2. Initializing procedure 3. DDRAM address for CU20025ECPB-W1J 4. FAQ Frequently Asked Questions 5. Comparisons between U-version modules and LCDs

Contextual Info: Green Power Solutions srl Via Venezia 34D - 10088 Volpiano TO , Italy Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it GPDP4218 AVALANCHE RECTIFIER DIODE VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS

GPDP4218

Abstract: GPDP4218T002
Contextual Info: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDP4218 AVALANCHE RECTIFIER DIODE VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS

discharge tube protector mtbf

Abstract: gas discharge tube MTBF Tower Mounted Amplifier remec, amplifier S0300701 remec bias tee Remec mtbf antenna pdu Remec RF power amplifier MHz
Contextual Info: PCS/DCS Indoor and Outdoor Bias Tees Coverage Enhancement Accessory Family FEATURES • Bias Tee feed of DC supply and ALPTM signals - no additional tower cabling • Extremely low RF insertion loss • Excellent return loss • Exceptional passive intermodulation

Contextual Info: Zener Regulator Diodes Mlsrcse i l Division Package Outline Type Santa Ana Santa Ana Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Santa Ana Santa Ana Scottsdale Scottsdale

RFM12N40

Abstract: RFM12 B RFM12N35
Contextual Info: Standard Power MOSFETs — RFM12N35, RFM12N40 File Number 1787 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 350 V - 4 0 0 V N-CHANNEL ENHANCEMENT MODE rDs on = 0 .5 O Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

ALY TRANSISTOR

Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS

Contextual Info: LVQ02 S3 National ÆM Semiconductor 54LVQ/74LVQ02 Low Voltage Quad 2-Input NOR Gate General Description Features The 'LV Q 02 co nta in s four, 2-input NOR gates. • Ideal fo r low p o w e r/lo w noise 3.3V a pplications ■ G uaranteed sim ultaneous sw itching noise level and

GM 950 motorola

Abstract: 4n90 4N85 N95 DIODE 4n90 MOSFEt
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MTM3N95 MTM3N100 MTM4N85 MTM4N90 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement M ode Silico n Gate T M O S These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

OP25

Contextual Info: H A -5127 £ HARRIS U ltra -L o w Noise Presision O perational Am plifier May 1990 Features A pplications • H ig h s p e e d . 10V / ms • High Speed Signal Conditioners • Wide Unity Gain B an dw id th. 8.5MHz

4511 7-segment display

Contextual Info: MM54HC4511/MM74HC4511 BCD-to-7 Segment Latch/Decoder/Driver General Description Features This high speed latch/decoder/driver utilizes advanced silicon-gate CMOS technology. It has the high noise immunity and low power consumption of standard CMOS integrated

IC 4027

Abstract: 35gp120b2d2 35GP120 APT35GP120B T0-247 70A 1200V IGBTS 35GP120B
Contextual Info: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

ST 7 flus 56

Abstract: 6P45S KD521D 3D24N RFT Service Mitteilung service-mitteilungen 7 flus 56 MP25B IC-98 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
Contextual Info: SERVICE-MITTEILUNGEN 3SITE APR./IUI 41 r a d i o -television VEB IN D U S T R I E V E R T R I E 8 R U N D F U N K U N D F E R N S E H E N 1 - 8 198o Mitteilung aus dem Bereich Servicevorbereitung R A D U G 1 - 73o - Schaltungsänderungen Wir teilen Ihnen die Veränderungen in der elektrischen Schal­

7406 50 amp igbt

Abstract: datasheet IC 7406 7406 35GP120B
Contextual Info: APT35GP120B 1200V Mos 7™ Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IC 7409

Abstract: 35gp120b2d2 7409 ic 7409 datasheet IGBT 600V 35A 35GP120B
Contextual Info: APT35GP120J 1200V Mos 7™ Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT35GP120J

Abstract: 35GP120
Contextual Info: APT35GP120J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency