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    340N07 Search Results

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    340N07 Price and Stock

    Littelfuse Inc IXFT340N075T2

    MOSFET N-CH 75V 340A TO268
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    DigiKey IXFT340N075T2 Tube 459 1
    • 1 $12.23
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    Newark IXFT340N075T2 Bulk 300
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    Littelfuse Inc IXFN340N07

    MOSFET N-CH 70V 340A SOT-227B
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    DigiKey IXFN340N07 Tube 10
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    Newark IXFN340N07 Bulk 300
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    RS IXFN340N07 Bulk 8 Weeks 10
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    Littelfuse Inc IXFH340N075T2

    MOSFET N-CH 75V 340A TO247AD
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    DigiKey IXFH340N075T2 Tube 1
    • 1 $11.08
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    Newark IXFH340N075T2 Bulk 300
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    RS IXFH340N075T2 Bulk 8 Weeks 30
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    IXYS Corporation IXFN340N07

    MOSFET Modules HiperFET Pwr MOSFET 70V, 340A
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    Mouser Electronics IXFN340N07 2,700
    • 1 $52.16
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    TTI IXFN340N07 Tube 300
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    TME IXFN340N07 1
    • 1 $59.58
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    New Advantage Corporation IXFN340N07 20 1
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    • 100 $79.66
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    IXYS Corporation IXFT340N075T2

    MOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFT340N075T2 2,186
    • 1 $12.14
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    • 100 $7.57
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    Bristol Electronics IXFT340N075T2 4
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    TTI IXFT340N075T2 Tube 300
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    TME IXFT340N075T2 1
    • 1 $12.19
    • 10 $9.67
    • 100 $8.69
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    New Advantage Corporation IXFT340N075T2 200 1
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    340N07 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 70 V = 340 A = 4 mW < 250 ns G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF 340N07 OT-227

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original
    PDF 340N07 250ns

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on = 70 V = 340 A Ω = 4 mΩ trr ≤ 200 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 70 V


    Original
    PDF 340N07 100kHz

    340N07

    Abstract: max8098
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr µs trr ≤ 200µ G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 340N07 100kHz 728B1 340N07 max8098

    340N07

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on = 70 V = 340 A Ω = 4 mΩ trr ≤ 200 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V


    Original
    PDF 340N07 100kHz 340N07

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 70 V = 340 A = 4 mW < 250 ns G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF 340N07 OT-227

    max8098

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr µs trr ≤ 200µ G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 340N07 100kHz max8098

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr µs trr ≤ 200µ G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 340N07 100kHz 728B1

    Siemens DIODE E 1240

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr < 200ns G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 340N07 200ns 100kHz 728B1 Siemens DIODE E 1240

    340N07

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR


    Original
    PDF 340N07 340N07

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 70 V = 340 A = 4 mW < 250 ns G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF 340N07 OT-227 E153432

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original
    PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original
    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    Untitled

    Abstract: No abstract text available
    Text: nixYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 340N07 70 V 340 A ^D25 = R — 4 mQ DS on ” t. < 250 ns DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions V DSS T j =25°C to150°C


    OCR Scan
    PDF IXFN340N07 to150 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ^D25 R DS on trr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr 70 V — 340 A 4 mQ < 250 ns s Maximum Ratings Symbol Test Conditions V v DSS


    OCR Scan
    PDF 340N07

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan
    PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan
    PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


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    PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50