smd code book L2
Abstract: 340 mmic
Text: GaAs MMIC CGY 340 Data Sheet • • • • • • • • • • WLL transmit upconverter IC for 3.5 GHz Fully Integrated IF Variable Gain Amplifier, Mixer, LO-Buffer, three RF Amplifier Stages and a switched Attenuator High Conversion Gain: typ. 29 dB
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MW-16
GPW05969
smd code book L2
340 mmic
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4.7 ohm resistor
Abstract: HMC535LP4 HMC535LP4E LM2903MX MMBT3904
Text: HMC535LP4 / 535LP4E v00.0405 Typical Applications Features Phase-Locked Oscillator for: Pout: +9 dBm • VSAT Radio Phase Noise: -110 dBc/Hz @100 KHz Typ. • Point-to-Point & Point-to-Multi-Point Radio • Test Equipment & Industrial Controls Single Supply: +5V @ 340 mA
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HMC535LP4
535LP4E
HMC535LP4
HMC535LP4E
MMBT3904,
LM2903MX
4.7 ohm resistor
LM2903MX
MMBT3904
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EMM5717
Abstract: No abstract text available
Text: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm
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EMM5717YF
50ohm
EMM5717YF
EMM5717
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EMM5717
Abstract: YD 1102
Text: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm
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EMM5717YF
50ohm
EMM5717YF
EMM5717
YD 1102
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RAYTHEON
Abstract: RMPA2451 RMPA2451-58
Text: RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier Description Features Raytheon RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or
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RMPA2451-58
RMPA2451-58
RAYTHEON
RMPA2451
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EMM5717YF
Abstract: EMM5717 KU 612 544 mmic ED-4701 "ku band" amplifier
Text: ES/EMM5717YF Preliminary Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. )
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ES/EMM5717YF
50ohm
EMM5717YF
1906B,
EMM5717
KU 612
544 mmic
ED-4701
"ku band" amplifier
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RAYTHEON
Abstract: 50W 4 GHz linear power amplifier
Text: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The
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RMPA2451-58
RMPA2451-58
RAYTHEON
50W 4 GHz linear power amplifier
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MAR-8A
Abstract: No abstract text available
Text: MMIC Amplifier MAR-8ASM+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)
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25degC
MAR-8A
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EMM5717X
Abstract: No abstract text available
Text: ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz ・High Associated Gain : Gas = 25dB ( Typ.) ・Broad Band : 12.7 - 24.0 GHz ・High Output Power : P1dB = 18dBm ( Typ. ) ・Impedance Matched Zin/Zout = 50Ω
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18dBm
EMM5717X
ES/EMM5717X
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EMM5717X
Abstract: EMM5717
Text: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz ・High Associated Gain : Gas = 25dB ( Typ.) ・Broad Band : 12.7 - 24.0 GHz ・High Output Power : P1dB = 18dBm ( Typ. ) ・Impedance Matched Zin/Zout = 50Ω
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EMM5717X
18dBm
EMM5717X
EMM5717
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73D31
Abstract: 26c311 EMM5717 EMM5717X D4444 9311H 4CC3 11D-9 A311D 6661D
Text: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz High Associated Gain : Gas = 25dB ( Typ.) Broad Band : 12.7 - 24.0 GHz High Output Power : P1dB = 18dBm ( Typ. ) Impedance Matched Zin/Zout = 50Ω
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EMM5717X
18dBm
EMM5717X
73D31
26c311
EMM5717
D4444
9311H
4CC3
11D-9
A311D
6661D
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MAR-8A
Abstract: No abstract text available
Text: MMIC Amplifier MAR-8A+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)
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25degC
MAR-8A
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RAYTHEON
Abstract: RMPA2451 RMPA2451-58
Text: Raytheon Raytheon Commercial Electronics RMPA2451-58 2.4 to 2.5 GHz GaAs MMIC Power Amplifier Description Raytheon RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz
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RMPA2451-58
RMPA2451-58
RAYTHEON
RMPA2451
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7447
Abstract: 7404
Text: MAR-8ASM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8ASM Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC
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RDF-994
-30dBm,
25degC
7447
7404
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AFP02N2
Abstract: No abstract text available
Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Numerical Index Part Number Page Part Number Page AA022N1-00 3-18 AFM06P2-00 3-42 AA022N1-65 3-19 AFM08P2-00 3-44 AA022P1-00 3-13 AFP02N2-00 3-58 AA022P1-65 3-16 AFP02N2-55 3-62 AA028N1-00 3-29 AFP02N2-56 3-62
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AA022N1-00
AA022N1-65
AA022P1-00
AA022P1-65
AA028N1-00
AA028P1-00
AA028P2-00
AA028P3-00
AA035P2-00
AA035P3-00
AFP02N2
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340 mmic
Abstract: TLCA03981 TLC Precision Wafer Technology tlc-a03
Text: KA-BAND MMIC AMPLIFIER & MULTIPLIER ABA-GAMPII TLCA03981 • 5 to 40 GHz • Gain > 10 dB • PAE ~ 25% • PSAT ~ 100 mW • 2x, 3x, 4x & 5x Multiplier Size: 2.17 x 1.3 x 0.1 mm DESCRIPTION AND APPLICATIONS The flat gain and multiplying characteristic provided
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TLCA03981)
340 mmic
TLCA03981
TLC Precision Wafer Technology
tlc-a03
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GaAs MESFET
Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .
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DC-18
MA01801
GaAs MESFET
SPDT FETs
MMIC
ALPHA spdt Switch
GaAs MESFET amplifier
GHz Power FET
GaAs MMIC SPDT Switch
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2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-23
OT-143
2907A PNP bipolar transistors
diode S6 78A
MMIC SOT 363
s1140
DIODE TA 70/04
2907A PNP bipolar transistors datasheet
Diode BAW 62
TRANSISTOR BC 158
baw 92
68W SOT
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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25-RF-BIPOLAR-Transistors.
45-RF-BIPOLAR-Transistors.
OT-23
OT-143
S4 78a DIODE schottky
diode S6 78A
BC 148 TRANSISTOR DATASHEET
transistors BC 543
TRANSISTOR BC 158
BC 158 is npn or pnp
68W npn
TRANSISTOR BC
s6 78a
baw 92
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TPT-13-6003
Abstract: No abstract text available
Text: TPT-13-6003 Temperature Compensated Amplifier 6 GHz - 13 GHz This Amplifier offers exceptional performance over the band 6 GHz to 13 GHz with 23 dBm P1dB output power and 18 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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TPT-13-6003
TPT-13-6003
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zener diode c5
Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
Text: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description 19.5 dB Gain at 900 MHz 29.5 dBm P1dB at 900 MHz 47 dBm Output IP3 at 900 MHz MTTF > 100 Years Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASX401
ASX401,
100pF
RCP2150A03
zener diode c5
Zener C422
zener diode c6
C2 6 zener diode
5-6V Zener Diode
Zener Diode C3 5
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CPT-8-2003
Abstract: No abstract text available
Text: CPT-8-2003 Temperature Compensated Amplifier 2 GHz - 8 GHz This Amplifier offers exceptional performance over the band 2 GHz to 8 GHz with 23 dBm P1dB output power and 26 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CPT-8-2003
CPT-8-2003
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CPT-13-6003
Abstract: No abstract text available
Text: CPT-13-6003 Temperature Compensated Amplifier 6 GHz - 13 GHz This Amplifier offers exceptional performance over the band 6 GHz to 13 GHz with 21.5 dBm P1dB output power and 18 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CPT-13-6003
Transceivers54
CPT-13-6003
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JESD22-A114
Abstract: MH203A MH203A-G MH203A-PCB
Text: MH203A The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Information Product Description Product Features +34 dBm Input IP3 7.3 dB Conversion Loss RF: 800 – 960 MHz LO: 1000 – 1310 MHz IF: 70 – 350 MHz +17 dBm Drive Level Lead-free / RoHS-compliant /
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MH203A
MH203A
JESD22-C101
J-STD-020
1-800-WJ1-4401
JESD22-A114
MH203A-G
MH203A-PCB
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