TFM-33N
Abstract: diode 30Vp piezo electric transducer piezo electric transducers TFM-33 Ningbo East Electronics TFM-25E
Text: External-driven Piezo Transducer TFM-33N FEATURES: Low Frequency Low Current Drain Light and Compact APPLICATIONS: Automatic Control Equipment Communication Equipment Electronic Instruments DIMENSIONS: Unit: mm CHARACTERISTICS: ELECTRICAL SPECIFICATIONS :
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TFM-33N
0kHz/10Vp-p
Wave/10cm.
1000Hz.
30VP-P
TFM-33N
diode 30Vp
piezo electric transducer
piezo electric transducers
TFM-33
Ningbo East Electronics TFM-25E
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b5rc0127
Abstract: B8XC0117-33N CGSD
Text: Capacitors 04.10.20 C Networks o 4 Elements BXXC Series 3.5max 10.5max 16.0max 1.0max 5.0±1.0 Marking 0.57ø AWG#23 F F F F=2.5±0.8 1.0approx. F in mm Number of Elements Capacitance (pF) Cap. Tolerance (%) TC Rated Voltage (Vdc) B5RC0129-33N 4 100 ±10
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B5RC0129-33N
B5RC0128-33N
B5RC0122-33N
B5RC0123-33N
B5RC0135-33N
B5RC0124-33N
B5RC0125-33N
B5RC0126-33N
B5RC0127-65N
b5rc0127
B8XC0117-33N
CGSD
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Untitled
Abstract: No abstract text available
Text: RMK 33N www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at + 70 °C • Wirebondable
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: RMK 33N www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at + 70 °C • Wirebondable
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2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: AEC-Q200 Updated: February 7, 2014 Validity: Q1-CY2014 X7R + FLEXITERM - AECQ-200 0603 to 0805 Mass Production 2014 2015 Capacitance Value / Capacitance Code Case Size Voltage 1n 1n5 2n2 3n3 4n7 6n8 10n 15n 22n 33n 47n 68n 100n 102 152 222 332 472 682 103
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AEC-Q200
Q1-CY2014
AECQ-200
Q3-15
Q4-14
Q2-15
100pF
200pF
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47n J 1000V
Abstract: No abstract text available
Text: Standard Grade Validity: Q1-CY2014 X5R – roadmap 0101 to 0603 Case Size 0101 = EIA 01005 0201 Voltage Mass Production 2014 2015 Capacitance Value / Capacitance Code 100 150 220 330 470 680 1n 1n5 2n2 3n3 4n7 6n8 10n 15n 22n 33n 47n 68n 100n 220n 470n 1u
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Q1-CY2014
Q2-14
Q1-15
Q3-14
Q2-15
47n J 1000V
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C1608CB
Abstract: C2520F C2520C marking code diode R12 R47 marking C2012C-33N C2012c 33n 100 marking code 33n C1005C-33N
Text: Chip Inductors for Surface Mounting •C2012C Size: 0805 Typical Q vs Frequency 140 Frequency Range:10~1000MHz Inductance Range:3.3nH~1000nH 120 C2012C-33N 100 Unloaded Q 1.17 0.43 1.4 0.43 Fixed 1.6 Max. 2.3 M ax. MARKING 1.7 Max. C2012C-8R2 C1608CB-22N
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sC2012C
1000MHz
1000nH
C2012C-33N
C2012C-8R2
C1608CB-22N
C1608CB-3R9
C1005C-6R8
C1005C-33N
1005C
C1608CB
C2520F
C2520C
marking code diode R12
R47 marking
C2012C-33N
C2012c
33n 100
marking code 33n
C1005C-33N
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kers
Abstract: 000000M hitachi metals Hitachi DSA002698 HS-SHS-080FL-9905A
Text: Chip Multilayer Antenna Switch with LPF for DAMPS SHS-080FL HITACHI METALS HS-SHS-080FL-9905A Measurement Circuits Shape & Size TX RX 100p 4. 5 1 ( 2) ( 3) 3. 2 1. 2 100p 100p VC1 ( 7) 10p 100p 51 33n 120 ANT VC1 VC2 TX->ANT 0V 3V ANT->RX 3V 0V Current
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SHS-080FL
HS-SHS-080FL-9905A
824-849MHz
869-894MHz
kers
000000M
hitachi metals
Hitachi DSA002698
HS-SHS-080FL-9905A
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RMK 33N
Abstract: No abstract text available
Text: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at 70 °C Actual Size The demand for high precision, high stability microchips for
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08-Apr-05
RMK 33N
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SR32-33N
Abstract: No abstract text available
Text: 32 & 33 Channels SAW Resonator SCOPE This specification shall cover the characteristics of SR32-33N SR Series of SAW Resonator which applies to the US channel RF modulator. Absolute Maximum Rating Ta=25°C Parameter DC Voltage VDC Rating Both 32 and 33 Channel
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SR32-33N
10Vpp
45KHz
JIS-K-501)
JIS-K-5902)
SR32-33N
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hitachi metals
Abstract: Hitachi DSA002698
Text: Chip Multilayer Antenna Switch with LPF for E-GSM SHS-090LL HITACHI METALS HS-SHS-090LL-9802A Measurement Circuits Shape & Size TX RX 100p 3 .2 1 .2 100p 100p VC1 3 (4) (6) (7) 9p VC2 100p ANT VC1 VC2 TX->ANT 0V 3V ANT->RX 3V 0V 33n 120 Current (5) 2 .0Max .
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SHS-090LL
HS-SHS-090LL-9802A
880-915MHz
925-960MHz
HS-SHS-090LL-9811A
30PRm
hitachi metals
Hitachi DSA002698
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B9HC0117-33N
Abstract: B8XC0114-33N AWG23
Text: Capacitors 03.06.12 C Networks o 4 Elements BXXC Series 3.5max 10.5max 16.0max 1.0max 5.0±1.0 Marking 0.57ø AWG#23 F F F F=2.5±0.8 1.0approx. F in mm Number of Elements Capacitance (pF) Cap. Tolerance (%) TC Rated Voltage (Vdc) B5RC0129-33N 4 100 ±10
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B5RC0129-33N
B5RC0128-33N
B5RC0122-33N
B5RC0123-33N
B5RC0135-33N
B5RC0124-33N
B5RC0125-33N
B5RC0126-33N
B5RC0127-65N
B9HC0117-33N
B8XC0114-33N
AWG23
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DA-2
Abstract: TFM-33 TFM-33N TFM-59D TFM-59DA-1 transducer 40khz
Text: TFM-33 External-driven Piezo Transducer TFM-33 33N FEATURES: ● Simple structure ● A good ratio of price to quality DIMENSIONS: (Unit: mm) CHARACTERISTICS: TFM-33 10VP-P Square Wave /10cm ELECTRICAL SPECIFICATIONS : Model No. Min. Sound Pressure Level(dB)
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TFM-33
TFM-33
10VP-P
/10cm
TFM-33N
/3kHz/10VP-P
Wave/10cm
DA-2
TFM-33N
TFM-59D
TFM-59DA-1
transducer 40khz
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10p51
Abstract: Hitachi DSA002698
Text: HITACHI METALS Chip Multilayer Antenna Switch with LPF for Sattellite Temporary Model No. SHS-160FL Shape & Size Measurement Circuit Rx Tx 100p 10p Vc1 120 33n 51 100p (1) 4.5 (2) (3) (4) (5) (6) (7) Vc2 2p 100p Ant. condition Vc1 Tx -> ANT ON ANT -> Rx ON
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SHS-160FL
1661MHz
1559MHz
36dBm
28ent
HS-SHS-160FL-9704A
10p51
Hitachi DSA002698
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Untitled
Abstract: No abstract text available
Text: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision Very low temperature coefficient < 10 ppm/°C Excellent stability 0.03 % 2000 h, rated power, at + 70 °C Actual Size Wirebondable The demand for high precision, high stability microchips for
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2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: RSK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • • • • • • • Actual Size The Vishay RSK33 resistive dividers are based on a nickel-chromium thin metal film formulation on an oxidized silicon substrate and incorporate two resistors of equal
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RSK33
18-Jul-08
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RMK 33N
Abstract: No abstract text available
Text: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at + 70 °C Actual Size • Wirebondable The demand for high precision, high stability microchips for
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18-Jul-08
RMK 33N
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Untitled
Abstract: No abstract text available
Text: RSK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Actual Size The Vishay RSK33 resistive dividers are based on a nickel-chromium thin metal film formulation on an oxidized silicon substrate and incorporate two resistors of equal
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2002/95/EC
RSK33
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SURFACE-MOUNT AIR COIL AIAC-1812 SERIES STANDARD SPECIFICATIONS Part Number 1,2 L mH 2 AIAC-1812-22N AIAC-1812-27N AIAC-1812-33N AIAC-1812-39N AIAC-1812-47N AIAC-1812-56N AIAC-1812-68N AIAC-1812-82N AIAC-1812-R10 AIAC-1812-R12 22 27 33 39 47 56 68 82 100
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AIAC-1812
AIAC-1812-22N
AIAC-1812-27N
AIAC-1812-33N
AIAC-1812-39N
AIAC-1812-47N
AIAC-1812-56N
AIAC-1812-68N
AIAC-1812-82N
AIAC-1812-R10
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Untitled
Abstract: No abstract text available
Text: SURFACE-MOUNT AIR COIL AIAC-1812 SERIES STANDARD SPECIFICATIONS Part Number L nH 1,2 2 AIAC-1812-22N AIAC-1812-27N AIAC-1812-33N AIAC-1812-39N AIAC-1812-47N AIAC-1812-56N AIAC-1812-68N AIAC-1812-82N AIAC-1812-R10 AIAC-1812-R12 22 27 33 39 47 56 68 82 100
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AIAC-1812
AIAC-1812-22N
AIAC-1812-27N
AIAC-1812-33N
AIAC-1812-39N
AIAC-1812-47N
AIAC-1812-56N
AIAC-1812-68N
AIAC-1812-82N
AIAC-1812-R10
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RSK 33N
Abstract: No abstract text available
Text: RSK 33N Vishay Thin Film Dual Value Chip Resistors, Center Tap FEATURES • Economic Cost • Low T.C.R. Actual Size • Rapid Rise Times The VISHAY RSK33 resistive dividers are based on a nickel-chromium thin metal film formulation on an oxidized silicon substrate and incorporate two resistors of equal ohmic
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RSK33
27-Apr-01
RSK 33N
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B8XC0114-33N
Abstract: B5RC0127-65N B8XC0114 B9HC0114-33N CGSD8X103N-T21 B5RC0123-33N y5p capacitors CGSD6X331M-T21 B5RC0124-33N
Text: Capacitors C Networks • 4 Elements BXXC Series ;iC Part Number Number of Elements Capacitance Cap. Tolerance PF (%) TC Rated Voltage (Vdc) 50 B5RC0129-33N 4 100 ±10 Y5P B5RC0128-33N 4 220 ±10 Y5P 50 B5RC0122-33N 4 330 ±20 Y5P 50 B5RC0123-33N 4 470 ±20
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B5RC0129-33N
B5RC0128-33N
B5RC0122-33N
B5RC0123-33N
B5RC0135-33N
B5RC0124-33N
B5RC0125-33N
B5RC0126-33N
B5RC0127-65N
B7ZC0720-33N
B8XC0114-33N
B5RC0127-65N
B8XC0114
B9HC0114-33N
CGSD8X103N-T21
y5p capacitors
CGSD6X331M-T21
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1661 mhz
Abstract: No abstract text available
Text: — ^ Chip Multilayer Antenna Switch with LPF for ACeS-Sattellite (Temporary \ / Model No. SHS-160FL Measurement Circuit Tx<HI 10p s 1 f Hh°Rx 100p - n'" b «H n a * ! 33n
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SHS-160FL
1559MHz
36dBm
1661 mhz
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SHS-090FL
Abstract: 960mhz
Text: HITACHI METALS Chip Multilayer Antenna Switch with LPF for EGSM Model No. SHS-090FL Measurement Circuit_ -| y I 100p - i¥ ' . v ' ± T x H I - S II- 0 !Rx 100p «II-1 H" 51 t t r n r « . V c lo - M r - -j 100f Tx D Ground 33n 1 (3) Rx
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SHS-090FL
915MHz
960MHz
55dBTyp.
65dBTyp.
36dBm
HS-SHS-090FL-9709A
SHS-090FL
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