MG50J1BS11
Abstract: No abstract text available
Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG50J1BS11
2-33F2A
MG50J1BS11
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AX323
Abstract: AX324
Text: jvisiytAjyi , 19-0347; Rev 0; 12/94 Precision Single-Supply, SPST Analog S w itches _F e a tu r e s ♦ Low On-Resistance Ro n . 60Q max (33f2 typ) When pow ered from a 5V supply, the M AX323 series offers 2Q m ax m atching between channels, 60£2 max
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MAX323
MAX324
MAX325
100pA
150ns
100ns
AX323
AX324
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Untitled
Abstract: No abstract text available
Text: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG100J1BS11
2-33F2A
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TOSHIBA IGBT
Abstract: MG25J1BS11 igbt 25A toshiba
Text: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG25J1BS11
2-33F2A
TOSHIBA IGBT
MG25J1BS11
igbt 25A toshiba
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MG75J1BS11
Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
Text: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG75J1BS11
2-33F2A
MG75J1BS11
TOSHIBA IGBT DATA BOOK
TOSHIBA IGBT
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MG25J1BS11
Abstract: No abstract text available
Text: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG25J1BS11
2-33F2A
MG25J1BS11
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mg150j
Abstract: TOSHIBA IGBT MG150J1BS11
Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG150J1BS11
2-33F2A
mg150j
TOSHIBA IGBT
MG150J1BS11
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Untitled
Abstract: No abstract text available
Text: 2-33F2A Unit m Aug,2002
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2-33F2A
20022-33F2A
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MG150J1BS11
Abstract: TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11
Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG150J1BS11
2-33F2A
MG150J1BS11
TOSHIBA IGBT
TOSHIBA IGBT MG150J1BS11
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TOSHIBA IGBT
Abstract: MG100J1BS11
Text: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG100J1BS11
2-33F2A
TOSHIBA IGBT
MG100J1BS11
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MG75J1BS11
Abstract: No abstract text available
Text: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG75J1BS11
2-33F2A
MG75J1BS11
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MG50J1BS11
Abstract: No abstract text available
Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG50J1BS11
2-33F2A
MG50J1BS11
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Untitled
Abstract: No abstract text available
Text: S5688B,S5688G,S5688J,S5688N TOSHIBA Rectifier Silicon Diffused Type S5688B, S5688G, S5688J, S5688N General Purpose Rectifier Application Unit: mm • Average forward current: IF AV = 1.0 A • Repetitive peak reverse voltage: VRRM = 100 V ~ 1000 V Absolute Maximum Ratings (Ta = 25°C)
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S5688B
S5688G
S5688J
S5688N
S5688B,
S5688G,
S5688J,
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05NH46
Abstract: No abstract text available
Text: TOSHIBA 05NH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 05NH46 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = io o o v m . :F AV = 0-5A
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05NH46
200ns
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: 1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1JH46 SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Forward Current : IF AV = 1.0A Unit: mm z Very Fast Reverse−Recovery Time : trr = 200ns (Max)
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1JH46
200ns
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FAST applications Handbook
Abstract: No abstract text available
Text: 1NH42 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1NH42 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.0A • Very Fast Reverse Recovery Time: trr = 400ns (Max)
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1NH42
400ns
FAST applications Handbook
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dla toshiba
Abstract: 1DL42A TOSHIBA RECTIFIER TOSHIBA DLA
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
dla toshiba
1DL42A
TOSHIBA RECTIFIER
TOSHIBA DLA
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S5688G
Abstract: S5688 toshiba Silicon Rectifier Diodes 10A45 S5688B S5688J S5688N 3-3F2A
Text: S5688B,S5688G,S5688J,S5688N TOSHIBA Rectifier Silicon Diffused Type S5688B, S5688G, S5688J, S5688N General Purpose Rectifier Application Unit: mm • Average forward current: IF AV = 1.0 A • Repetitive peak reverse voltage: VRRM = 100~1000 V Maximum Ratings (Ta = 25°C)
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S5688B
S5688G
S5688J
S5688N
S5688B,
S5688G,
S5688J,
S5688B
S5688G
S5688
toshiba Silicon Rectifier Diodes
10A45
S5688N
3-3F2A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7 H STROBO FLASHER APPLICATIONS FAST RECOVERY U n it in mm • Average Forw ard C urrent : Txr* (A V ) —0=2A • Reverse Voltage (D C ) • R ep etitive Peak Reverse Surge Voltage :V r r s m = 1500V
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Untitled
Abstract: No abstract text available
Text: TO SH IB A S5688B,S5688G,S5688J,S5688N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5688B, S5688G, S5688J, S5688N Unit nun GENERAL PURPOSE RECTIFIER APPLICATIONS. tt • in Ttt* A iVn -1 Í1A Average Forwgr¿ Current Repetitive Peak Reverse Voltage VRRM= 100-1000V
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S5688B
S5688G
S5688J
S5688N
S5688B,
S5688G,
S5688J,
S5688N
00-1000V
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ED 05
Abstract: No abstract text available
Text: TO SH IBA 1FWJ43N TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 1 FWJ43N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Low Forward Voltage Average Forward Current Repetitive Peak Reverse Voltage VFM = 0.37 V Max. ÏF(AV) =1-0 A V r r m = 30V
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1FWJ43N
FWJ43N
ED 05
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Untitled
Abstract: No abstract text available
Text: T O SH IB A S5688B,S5688G,S5688J,S5688N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5688B, S5688G, S5688J, S5688N GENERAL PURPOSE RECTIFIER APPLICATIONS. U nit in mm • Average Forward Current :F AV = 1-Oa • Repetitive Peak Reverse Voltage V rrm = 100~1000V
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S5688B
S5688G
S5688J
S5688N
S5688B,
S5688G,
S5688J,
S5688B
S5688G
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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CQ220I-6BS
Abstract: CQ220I-6DS CQ220I-6MS CQ220I-6NS
Text: Datasheet CQ220I-6BS CQ220I-6DS CQ220I-6MS CQ220I-6NS I Sem iconductor Com ISOLATED TAB TRIAC 6.0 AMP. 200 THRU 800 VOLTS 145 A d a m s Avenue, Hauppauge, NY 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors
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CQ220I-6BS
CQ220I-6DS
CQ220I-6MS
CQ220I-6NS
TQ-220AB
T0-220
CQ220I
CQ220I
CQ220I-6NS
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