33E marking
Abstract: No abstract text available
Text: LCS16CXXL08 SERIES 5 3 " Brightking's LCS16CXXL08 series of TVS arrays are designed to protect sensitive ! $ " & ! " # ! % $ % $ ' ' ' ( )* $ ! & & ' $ ! % $ ! % % ' ! % ! $ ! " IEC61000-4-2 ESD 15kV Air, 8kV contact compliance +, ! ! - Protects eight I/O lines
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LCS16CXXL08
IEC61000-4-2
LCS16CXXL08
33E marking
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MS90311
Abstract: MS90311-271 MS90310 MS25307 MIL-S-8834 MS21027 K851 MS21353 transistor D331 circuit diagram application ms25307-212
Text: SECTION A TOGGLE SWITCHES Introduction Industrial – Environmentally Sealed Switches • Watertight seal per MIL-STD-108 • Ratings at 28VDC and 115VAC 60/400Hz • One, two and four pole configurations • Toggle and designerline actuators • Positive detent action
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MIL-STD-108
28VDC
115VAC
60/400Hz
MIL-S-3950
variati8867K11,
8867K611,
MS90311
MS90311-271
MS90310
MS25307
MIL-S-8834
MS21027
K851
MS21353
transistor D331 circuit diagram application
ms25307-212
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CP32FM
Abstract: SM-1376 CP33E RELAY 24V FUJI CP33FM TH35-15AL CP33V CP53B CP32VM CP32D
Text: Circuit Protectors CP31F, 32F, 33F CP-F slim type circuit protectors 250V AC/65V DC 1-pole 0.1A to 30A 250V AC/125V DC (2-pole) 0.1A to 30A 250V AC (3-pole) 0.1A to 30A Description FUJI's compact and high-performance CP-F series circuit protectors incorporate
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CP31F,
AC/65V
AC/125V
E96846)
R9650230)
CP32FM
SM-1376
CP33E
RELAY 24V FUJI
CP33FM
TH35-15AL
CP33V
CP53B
CP32VM
CP32D
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AH165-2
Abstract: AH30 FUJI AF97-68
Text: COMMAND SWITCHES AR22•DR22/AR30•DR30 AH164•AH165•AH165-2 16mm/22mm/30mm Diameter USEH417 Preface Fuji Electric manufactures FUJI COMMAND SWITCHES-pushbutton, illuminated pushbutton, and selector switches, and pilot lights. FUJI COMMAND SWITCHES are used in machine tools, industrial machines, control panels, distribution panels, and
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DR22/AR30â
AH164â
AH165â
AH165-2
16mm/22mm/30mm
USEH417
2008/5M
AH165-2
AH30 FUJI
AF97-68
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Untitled
Abstract: No abstract text available
Text: NCS333, NCV333 10 mV Offset, 0.07 mV/5C, Low Power, Zero-Drift Operational Amplifier The NCS333 is a precision op amp with very low input offset voltage 10 mV max and near−zero drift over time and temperature. This high precision, low quiescent current amplifiers has high
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NCS333,
NCV333
NCS333
NCS333/D
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SIT8002
Abstract: No abstract text available
Text: SiT8002AA Advanced Information Automotive Temperature Range Oscillator Features Benefits • Operating temperature range: • • • • No crystal or capacitors required Eliminates crystal qualification time 50% + board saving space Most cost effective than Quartz oscillators, Quartz crystals
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SiT8002AA
SIT8002
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SiT8002
Abstract: A104 JESD22
Text: SiT8002 1 to 125 MHz Programmable Oscillator Features • High drive option: 30pF load contact factory Benefits • ±60 ps Peak-Peak Period Jitter • Wide frequency range • • • • No crystal or capacitors required Eliminates crystal qualification time
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SiT8002
A104
JESD22
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1rf9530
Abstract: No abstract text available
Text: International k? r Rectifier HEXFET Pow er M O S F E T 4655452 □D14642 33E PD-9.320G IINR IRF9530 INTERNATIONAL RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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D14642
IRF9530
O-220
1rf9530
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BC859
Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C 33E marking marking TN4
Text: 711002b 001364145 33e? H P H IN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.
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00bfi445
BC859
BC860
OT-23
BC860
BC859A
BC859B
BC859C
BC860A
BC860B
BC860C
33E marking
marking TN4
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1N4446
Abstract: 1N4148 derating 1N4148 1N4448 FIT4
Text: TERRY S E M I C O N D U C T O R INC 33E D • ÔT^G? G0QQ014 Ô ■ TERRY m 1N4148 1N4446 1N4448 HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. These diodes are primarily intended for fast logic applications. QUICK REFERENCE DATA
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G0QG014
1N4148
1N4446
1N4448
DO-35
1N4148:
1N4446:
1N4448:
100mA
OD-27
1N4148 derating
1N4448
FIT4
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Untitled
Abstract: No abstract text available
Text: 33E D • fl2 3 b 3 2 Q Q O lb S Û S 0 H S IP Silicon Diode Array S IE M E N S / BGX 50 A SPCL-, SEM ICÔ N DS _ • Bridge configuration • High-speed switch diode chip 4 2 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
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Q62702-G35
Q62702-G38
f-150
T-23-05
rA-25Â
23b320
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zener diode color codes
Abstract: zener diodes color codes zener color codes 3.9BI glass tube zener diode code color glass diode color codes glass zener diode color codes BI 33 zener MA zener color codes DIODE COLOR BAND MARKING CODES
Text: 33E J> • PTAIYO YUDEN USA INC T ? ^ -0 flfi35M75 D0Q0577 0 1 T Y I . ; ( q ) J f ^ C D ^ § g = ] 2 > 7 , > - y - ^ r o ^ ^ e i £ i g i T ; § g i : | q l i i C ^ J L 5 1^ 0 > K ^ ' q I^ T !^ o The following two types of diodes are provided by TAIYO YUDEN :
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flfl3S475
zener diode color codes
zener diodes color codes
zener color codes
3.9BI
glass tube zener diode code color
glass diode color codes
glass zener diode color codes
BI 33 zener
MA zener color codes
DIODE COLOR BAND MARKING CODES
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mb 428 ic data
Abstract: 33E marking
Text: M I CR ON T E C H N O L O G Y INC 33E » • b lllS M T GQQB7bl^ S « M R N T H tr Z l-O S , SRAM 1 MEG X 1 SRAM '> a ' FEATURES • High speed: 25,35, and 45ns • High-performance, low-power, CMOS double metal process • Single +5V ±10% power supply
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28L/400
400mil)
T-46-23-05
mb 428 ic data
33E marking
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zener diode color codes
Abstract: glass diode color codes COLOR BAND MARKING CODES DIODE COLOR BAND MARKING CODES QDS53 QDS54 QDS55 QDS953 QDS954 QDS955
Text: T - 'y Z f f j f i a a "•C H IP C O M P O N E H T S >•••*• TAIYO YUDEN USA INC 33E D ■ ÛÔBSMVS QGGDSÛQ 0 BITYI <0°v '■. •*; ' ;•:"'• :- '-. ' V C :k ÿ . ÿ $ ^ ■ ' . i - S W IT C H IN G ' T Y P E ' V- ir î- ?■'. ; H ' -’ .>> * Y
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Untitled
Abstract: No abstract text available
Text: .100" X .100" Condo Header Right Angle, 4 Wall/4 Wall, High Temp Option 3000 Series • Stacked pins conserve space on the circuit board allowing higher density packaging • Pin quantity to 128 gives design flexibility with latching • “ HDI” alternative
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TS-0774-01
-L30X
-L20X
-L00X
TD35312
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pabi
Abstract: SL13 SL14 SSL12 SSL13 SSL14 B03 marking PABI MARKING
Text: E SSL12 - SSL14 TAIWAN SEMICONDUCTOR 1.0 AMP. Surface Mount Low V F Schottky Barrier Rectifiers SMA/DQ-214AC RoHS COM PLIANCE .van y/> Features 4•v- -v-v444- <■ Tor su rface m ou nted application Metal silicon Junction, m ajority carrier con ductlon
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SSL12
SSL14
SMA/DO-214AC
pabi
SL13
SL14
SSL13
SSL14
B03 marking
PABI MARKING
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. ID / COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 2 3 - LOC REVISIONS DIST ALL RIGHTS RESERVED. P LTR DESCRIPTION C SEE 2 SHEET 2 FOR RECOMMENDED P.C. BOARD LAYOUT. TRUE 2 . DWN APVD PY BW 20SEP07
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20SEP07
31MAR2000
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T2514
Abstract: No abstract text available
Text: SGS-THOMSON T2514XKS T2516xKS mi SNUBBERLESS TRIACS FEATURES • I t RMS = 25A ■ HIGH COMMUTATION : (dl/dt)c;> 12A/msT2514xKS S: 22A/ms T2516xKS . INSULATING VOLTAGE =2500V(rms) (UL RECOGNIZED : E81734) DESCRIPTION The T2514/T2516xKS series of isolated triacs
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T2514XKS
T2516xKS
2A/msT2514xKS
E81734)
T2514/T2516xKS
0074L71
T2514
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Untitled
Abstract: No abstract text available
Text: BL Minute Current Switches • ■ . Designed for PC Board Applications - 1. Term inal pitches are all in inch size m ultiples o f 2.54mm .
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D0DD35Ã
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BYD71A
Abstract: BYD71 BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G
Text: ODEbLiDD Ö5D • APX b'lE T> N AUER PHILIPS/DISCRETE Product spécification Philips semiconductors BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in hermetically sealed axial-leaded ID implosion diode envelopes. They feature low forward voltage drop, very fast
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BYD71
BYD71A
BVD71B
BYD71C
G05bbCH
MSC053
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
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IN23C
Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low
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DO-22,
DO-23
DO-37
26GHz.
supp26A
DO-37
1N26B
1N26C
IN23C
IN23E
in23we
IN416D
1N26
1N25 diode
1N26A diode
IN23WGMR
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Untitled
Abstract: No abstract text available
Text: WS27C210L Military 64K x 16 CMOS EPROM KEY FEATURES Ultra-High Performance • JEDEC Standard Pin Configuration — 120 ns Access Time — 40 Pin CERDIP Package — 44 Pin Leadless Chip Carrier CLLCC — 44 Pin Leaded Chip Carrier (CLDCC) DESC SMD No. 5962-86805
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WS27C210L
WS27C210L
lowC210L-15DMB*
MIL-STD-883C
WS27C210L-15LMB
WS27C210L-17CMB*
WS27C210L-17DMB*
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Untitled
Abstract: No abstract text available
Text: t& a. tâiuiiaÉdÉâtXaÉRiidtaM MICRON TECHNOLOGY INC f* 3flE ]> blllSM"] 0 0 0 5 Û G C1 ? Hf IR N n T ^ L - l l -iO . -'JJIJJf - • ■ < ¡hm-irMUfrr- ‘iff» ' ■ 16K x 4 SRAM SRAM W IT H S E P A R A TE IN P U T S A N D O U T P U T S FEATURES PIN ASSIGNMENT Top View
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transistor zo 103 MA 7S 738
Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Text: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ72
Q62702-F776
fl235b05
00b714S
transistor zo 103 MA 7S 738
SiEMENS PM 350 98
VCE05181
siemens 350 98
siemens Pm 90 87
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