33A SMD DIODE Search Results

FAG 29 diode

Abstract: K/FAG 29 diode
Contextual Info: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A /60V FEATURES 1.2 .047 — 4.8<1.9) MAX O |SOUARE-PAKlTO-263AB (SMD) Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB > 914158 . ) 10.6 .417) 8.5U35) 9.6 .378)

Contextual Info: C30T04Q C30T04Q-11A 33A/40V SCHOTTKY BARRIER DIODE GCQ30A04 FCQ30A04 FEATURES o [ SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T04Q o Tabless TO-220: C30T04Q-11A O TO-220AB : GCQ30A04 r 2.2f.087) 1.8(.071) o T0-220AB Fully Molded Isolation

FCQ30A06

Contextual Info: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

DIODE t15 82

Abstract: FCH30A10 C30T09Q C30T09Q-11A C30T10Q C30T10Q-11A FCH30A09 GCH30A09 GCH30A10 DIODE smd Wj
Contextual Info: 3 ?a /on innu 33a/90~ioov CPUflTTlfV DADDICD ninne SCHOTTKY BARRIER DIODE C30T09Q C30T09Q-11A GCH30A09 FCH30A09 c30tiqq c30ti0q-iia gch3Qaio fch30aiq FEATURES o | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T • • Q o Tabless TO-220: C30T-Q-11A

Diode smd 5j

Abstract: J124 100-c30 C30T06Q C30T06Q-11A FCQ30A06 GCQ30A06 DIODE smd Wj SMD 23k g4 150H2
Contextual Info: SCHOTTKY 13830612 C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

Contextual Info: SCHOTTKY BARRIER DIODE C30T03QL C30T03QL-11A 33a/ sov FEATURES o ISQUARE-PAXlTO-263AB SMD Packaged in 24mm Tape and Reel : C30T03QL O Tabless TO-220: C30T03QL-11A ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop o High Surge Capability o 20 Volts through 100 Volts

FCQ20A04

Contextual Info: C30T04Q C30T04Q-11A 33A/40V SCHOTTKY BARRIER DIODE GCQ30A04 FCQ30A04 FEATURES O 1SQ U A RE-PA K l TO-263AB SMD Packaged in 24mm T ape and Reel : C30T04Q o Tabless TO-220: C30T04Q-11A o T 0-220A B : GCQ30A04 o T0-220A B Fully M olded Isolation : FCQ20A04

Contextual Info: SCHOTTKY BARRIER DIODE C30T02QL C30T02QL-11A 33a /20 v FEATURES o | SQ UA RE-PÀ K] TO-263AB SMD Packaged in 24mm Tape and Reel : C30T02QL o Tabless TO-220: C30T02QL-11A o Dual Diodes - C athode Com m on 2.2(.Q87) 1.8(.071) ° Low Forw ard Voltage D rop

15n10

Abstract: 100-c30 smd 33a C30T09Q C30T09Q-11A C30T10Q C30T10Q-11A FCH30A09 FCH30A10 GCH30A09
Contextual Info: SCHOTTKY BARRIER DIODE /on 1nm i 33A/90— 10UV C30T09Q C30T09Q-11A GCH30A09 FCH30A09 C30T10Q C30T10Q-11A GCH30A10 FCH30A10 FEATURES o | SQUARE-PAK~| TO-263AB SMD Packaged in 24mm Tape and Reel : C30T • • Q o Tabless TO-220: C30T-Q-11A o T 0220A B : GCH30A • •

Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2532 FDB2532 TO-263 Unit: mm rDS(ON) = 14m +0.1 1.27-0.1 Features (Typ.), VGS = 10V, ID = 33A +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: SCHOTTKY BARRIER DIODE C30T03QL C30T03QL-11A 33A/30V FEATU RES o | SQ UA RE-PA K I TO-263AB SMD Packaged in 24mm Tape and Reel : C30T03QL o Tabless TO-22G C30T03QL-11A o Dual Diodes - C athode Com m on ° Low Forw ard Voltage D rop ° H igh Surge Capability

smd diode l03

Abstract: smd JSs 13 smd JSs diode smd JSs t0 ca smd L03 SMD smd JSs 24 FCQ20A04 C30T04 C30T04Q
Contextual Info: SCHOTTKY BARRIER DIODE C30T04Q C30T04Q-11A 33A/40V GCQ30A04 FCQ30A04 FEATURES O [ SQ U A RE-PA K l TO-263AB SMD Packaged in 24mm T ape and Reel : C30T04Q o Tabless TO-220: C30T04Q-11A ° T 0-220A B : GCQ30A04 o T 0-220A B Fully M olded Isolation : FCQ20A04

Contextual Info: Product specification KDB2532 FDB2532 TO-263 Unit: mm rDS(ON) = 14m +0.1 1.27-0.1 Features (Typ.), VGS = 10V, ID = 33A +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 2.54-0.2 +0.2 15.25-0.2

Contextual Info: Transistors IC SMD Type Product specification KDD2572 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Typ. , VGS = 10V, ID = 9A Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) 2.3 Qualified to AEC Q101 +0.1

C30T02QL

Abstract: C30T02QL-11A
Contextual Info: SCHOTTKY BARRIER DIODE FEATURES o | SQUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C30T02QL o Tabless TO-220: C30T02QL-11A -\ 1 4 (.0 S6 ) 1.2 (.047 | _j • 1.4C.065) T 10.6^ 417 ) 1~m m "53Ö35SI 1 0 1 (3 9 8 1 1 0 — 0.3 (. 012 ) 4 .01.157 )

Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15CJ6V8-G Thru. TV15CJ601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power : 1500Watts RoHS Device Features -Glass passivated chip. -1500W peak pulse power capability with a 10/1000 S waveform, repetitive rate

TVP06B15A

Contextual Info: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit.

47N10L

Abstract: smd diode code marking 33A SPP47N10L SPB47N10L SPI47N10L KJ SMD DIODE MARKING
Contextual Info: Preliminary data SPI47N10L SPP47N10L,SPB47N10L SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 26 m
ID 47 A P-TO263-3-2

SMD MARKING CODE 5a6

Abstract: SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd
Contextual Info: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2

47N10L

Abstract: SPI47N10L 47N10 SPB47N10L SPP47N10L
Contextual Info: Preliminary data SPI47N10L SPP47N10L,SPB47N10L SIPMOS Power-Transistor Product Summary Feature
N-Channel VDS
Enhancement mode R DS on 26 m

Logic Level ID 47 A
175°C operating temperature P-TO262-3-1 P-TO263-3-2 100 V P-TO220-3-1
Avalanche rated

N10L26

Abstract: IPP47N10SL-26 smd diode code marking 33A IPB47N10SL-26 IPI47N10SL-26 PG-TO263-3-2 n10l
Contextual Info: IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 V RDS on 26 m
ID 47 A P-TO263-3-2

5a6 zener diode

Abstract: SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd
Contextual Info: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2

3N0625

Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9

TRANSISTOR SMD kl3

Abstract: 12 Hour Digital Clock Circuit 2C1E FST 277 TRANSISTOR smd TRANSISTOR code b6 smd TRANSISTOR code b7 TRANSISTOR SMD m3a equivalent transistor bce 243 REJ09B0001
Contextual Info: REJ09B0455-0010 R8C/33A Group 16 Hardware Manual RENESAS MCU M16C FAMILY / R8C/Tiny SERIES Preliminary All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by