ARF461AG
Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Text: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF461A
ARF461B
65MHz
ARF461AG
VK200-4B
40.68mhz
40.68MHz power amplifier
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arco mica trimmer
Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
Text: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF461A
ARF461B
O-247
65MHz
ARF461A
ARF461B
O-247
335nH
VK200-4B
ARF461A/B
arco mica trimmer
class B push pull power amplifier
class td amplifier
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VK200-4B
Abstract: ARF461A ARF461B
Text: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF461A
ARF461B
O-247
65MHz
ARF461A
ARF461B
VK200-4B
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LTC5599
Abstract: No abstract text available
Text: LTC5599 30MHz to 1300MHz Low Power Direct Quadrature Modulator Description Features n n n n n Frequency Range: 30MHz to 1300MHz Low Power: 2.7V to 3.6V Supply; 28mA Low LO Carrier Leakage: –51.5dBm at 500MHz Side-Band Suppression: –52.6dBc at 500MHz Output IP3: 20.8dBm at 500MHz
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LTC5599
30MHz
1300MHz
500MHz
156dBm/Hz
65dBm
LTC5599
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l1335
Abstract: DIP2212 LBN7007
Text: SIPAT Co.,Ltd www.sipatsaw.com China Electronics Technology Group Corporation No.26 Research Institute LBN7007 SAW Filter Electrical Characteristic Specifications Parameter Unit Minimum Typical Maximum Center Frequency Insertion Loss MHz 69.8 70 70.2 22.9
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LBN7007
128-LiNbO3
DIP2212
335nH
403nH
l1335
DIP2212
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class b power transistors current gain
Abstract: VK200-4B
Text: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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Original
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PDF
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ARF461A
ARF461B
O-247
65MHz
ARF461A
ARF461B
class b power transistors current gain
VK200-4B
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Untitled
Abstract: No abstract text available
Text: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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Original
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PDF
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ARF461A
ARF461B
65MHz
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