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    331 TRANSISTOR Search Results

    331 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    331 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU269 – September 2008 TPS650240EVM-331 This User’s Guide describes the characteristics, operation, and use of the TPS650240EVM-331 evaluation module EVM . This EVM is designed to help the user evaluate the TPS650240 and the TPS79901 in a


    Original     		SLVU269 TPS650240EVM-331 TPS650240EVM-331 TPS650240 TPS79901 iMX31 PDF

    12S10

    Abstract: C67078-S3114-A2 331 transistor
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-218 C67078-S3114-A2 12S10 C67078-S3114-A2 331 transistor PDF

    C67078-S3114-A2

    Abstract: No abstract text available
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-218 C67078-S3114-A2 C67078-S3114-A2 PDF

    phototransistor 650 nm

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		331-JK Q65110A2821 phototransistor 650 nm PDF

    transistor d-331

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		331-JK Q65110A2821 transistor d-331 PDF

    phototransistor 650 nm

    Abstract: phototransistor peak 550 nm
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm PDF

    Untitled

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF

    C 331 Transistor

    Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
    Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.


    OCR Scan     		O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331 PDF

    DF 331 TRANSISTOR

    Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		O-218AA C67078-S3114-A2 00--------V O-218AA DF 331 TRANSISTOR D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor PDF

    transistor B A O 331

    Abstract: D F 331 TRANSISTOR
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-218 C67078-S3114-A2 SILO3821 transistor B A O 331 D F 331 TRANSISTOR PDF

    DF 331 TRANSISTOR

    Abstract: transistor df 331
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		O-218 C67078-S3114-A2 fi23SbD5 Gfl47b7 0Dfi47bà DF 331 TRANSISTOR transistor df 331 PDF

    transistor h 331

    Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
    Text: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten


    OCR Scan     		Q62702-P1634 hotocurrent/pCE//pCE250 transistor h 331 D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led PDF

    D F 331 TRANSISTOR

    Abstract: No abstract text available
    Text: SIEM ENS SM T Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code S F H 331 Q 62702-P1634 Wesentliche Merkmale • Geeignet für V apor-Phase Löten und IR-Reflow Löten


    OCR Scan     		62702-P1634 /pCE//pCE250 D F 331 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: WL 4-2 W L 4-2 F 331 -E 331 W L 4-2 F 132 -E 132 F Range 2.8 m ¥ •M -12 Features: • Red light sender LED to assist with setting-up • Polarisation filte r which enables recognition o f objects w ith glossy surfaces Adjustment aided by LED signal strength indicator


    OCR Scan     		1000/s PDF

    s3331

    Abstract: No abstract text available
    Text: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated


    OCR Scan     		bbSBT31 BU1508DX bb53T31 S3331 DD2fl33fl PDF

    transistor 21Y

    Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
    Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements


    OCR Scan     		/331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553 PDF

    transistor BC 331

    Abstract: lm567 schematic diagram MC 331 transistor LM567 Adjustable Power Supply Schematic Diagram LM567CH 331SSE BC 331 Transistor LM58 connection diagram
    Text: National Sem iconductor Sem iconductors Linear I.C .'s- Consumer Circuits SCHEMATIC AND CONNECTION DIAGRAM LM567 Series Tone Decoders LMS67H LMS67CH Metal Can Package REFERENCE TABLE Code Stock No. LMS67H LM567CH LMS67CN 331SSE 331 MC 331S7A GENERAL DESCRIPTION


    OCR Scan     		LM567 LMS67H 331SSE LM567CH LMS67CN 3157A LM567C transistor BC 331 lm567 schematic diagram MC 331 transistor Adjustable Power Supply Schematic Diagram LM567CH 331SSE BC 331 Transistor LM58 connection diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor E E E MMPQ6700 31 | j v : 331 E UVI a E Ü II J V I si PNP/NPN Silicon Voltage and current are negative for PNP transistors sä a MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol


    OCR Scan     		MMPQ6700 751B-05, PDF

    BUK657

    Abstract: BUK657-400A BUK657-400B T0220AB IRF FET
    Text: N AMER PHILIPS/DISCRETE 2SE D m ^53=331 □□2070Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		BUK657-400A BUK657-400B T-37-/3 BUK657 -40QA -400B BUK657-400B T0220AB IRF FET PDF

    Untitled

    Abstract: No abstract text available
    Text: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage


    OCR Scan     		SML50G60BN SML50G50BN SML50G60/50G50BN PDF

    philips bfq

    Abstract: BFQ263 BFQ263A RK 100
    Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with


    OCR Scan     		BFQ263; BFQ263A 711062b 0045bi 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100 PDF

    d331 npn transistor

    Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
    Text: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­


    OCR Scan     		2SD330, 2SB514, Q004T05 2SB514 DissipatioBH81 0DGB752 d331 npn transistor D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor PDF

    mosfet J 3305

    Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
    Text: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,


    OCR Scan     		MTP7P06 b3b7254 0CHfl703 mosfet J 3305 221A-06 72SM AN569 MTP7P06 TMOS Power FET PDF

    npn transistor dc 558

    Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
    Text: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		BFQ22S BFQ24. bb53c131 DD3151S BFQ22S npn transistor dc 558 transistor dc 558 npn BFQ24 Transistor 5331 BFQ22 PDF