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Amphenol SV Microwave 7033-0039 COAX CBL 1.85MM TO 1.85MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	7033-0039	Bag	14		1	1 $387.32 10 $304.788 100 $387.32 1000 $387.32 10000 $387.32	Buy Now
Newark	7033-0039	Bulk			10	1 $454.53 10 $454.53 100 $365.89 1000 $365.89 10000 $365.89	Buy Now
Interstate Connecting Components	7033-0039					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	7033-0039				10	1 - 10 $297.19 100 $239.23 1000 $239.23 10000 $239.23	Buy Now
Microchip Technology Inc MA330039 DSPIC33CH128MP508 PLUG-IN MODULE
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DigiKey	MA330039	Bulk	4		1	1 $39.98 10 $39.98 100 $39.98 1000 $39.98 10000 $39.98	Buy Now
Avnet Americas	MA330039	Box			4	1 $42.81126 10 $42.81126 100 $42.81126 1000 $42.81126 10000 $42.81126	Buy Now
Mouser Electronics	MA330039					1 $39.2 10 $39.2 100 $39.2 1000 $39.2 10000 $39.2	Get Quote
Newark	MA330039	Bulk			1	1 $40.77 10 $40.77 100 $40.77 1000 $40.77 10000 $40.77	Buy Now
Microchip Technology Inc	MA330039		39	12 Weeks		1 $39.2 10 $39.2 100 $39.2 1000 $39.2 10000 $39.2	Buy Now

TME	MA330039		2		1	1 $44.86 10 $44.86 100 $44.86 1000 $44.86 10000 $44.86	Buy Now
NAC	MA330039				7	1 $47.6 10 $47.6 100 $43.84 1000 $40.63 10000 $40.63	Buy Now
Richardson RFPD	MA330039				4	1 - 10 $46.93 100 $42.72 1000 $42.72 10000 $42.72	Buy Now
Avnet Silica	MA330039			28 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	MA330039					1 $43.84 10 $43.84 100 $43.84 1000 $43.84 10000 $43.84	Buy Now
3M Interconnect 7100330039 FLUX FIELD DIRECTIONAL MATERIAL
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DigiKey	7100330039	Bulk			1	1 $87.79 10 $87.79 100 $87.79 1000 $87.79 10000 $87.79	Buy Now
Molex 0366330039 CONN HEADER VERT 18POS 4.2MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0366330039	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Phoenix Contact 1050033:0039 TERM BLOCK MARKER
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DigiKey	1050033:0039	Bulk			10	1 - 10 $2.388 100 $2.388 1000 $2.388 10000 $2.388	Buy Now
Mouser Electronics	1050033:0039		9			1 $2.82 10 $2.64 100 $2.45 1000 $2.44 10000 $2.44	Buy Now
RS	1050033:0039	Bulk			10	1 - 10 $3.29 100 $2.63 1000 $2.3 10000 $2.3	Get Quote
Master Electronics	1050033:0039					1 - 10 $3.1 100 $2.75 1000 $2.27 10000 $2.15	Buy Now
Sager	1050033:0039				10	1 - 10 $3.12 100 $3 1000 $2.68 10000 $2.68	Buy Now

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330039 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Untitled Abstract: No abstract text available Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	PDF	CGH35015 CGH35015 CGH3501 35015P
Untitled Abstract: No abstract text available Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503
0.1 uf Ceramic disc Capacitors 104 Abstract: cd z5v cap .01 uf disc capacitor capacitor n75 K 3568 15000180 .22 uf disc capacitor capacitor 101 Y5F 104 Ceramic Disc Capacitors 224 Ceramic Disc Capacitors Text: PART NUMBERING SYSTEM CD - 1KO / 103 Z 0Z5V 1 E TR COMPUTER CODE TR = Tape/Reel TA = Tape/Ammo – = Bulk CERAMIC DISC MAX DIAMETER only if required RATED VOLTAGE NOMINAL CAPACITANCE STANDARD TOLERANCES V First two digits are F = ±1% OPERATING RANGE -012	Original	PDF	000pf N1500 500ppm) 0.1 uf Ceramic disc Capacitors 104 cd z5v cap .01 uf disc capacitor capacitor n75 K 3568 15000180 .22 uf disc capacitor capacitor 101 Y5F 104 Ceramic Disc Capacitors 224 Ceramic Disc Capacitors
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	PDF	CGH35015 CGH35015 CGH3501 35015P
Untitled Abstract: No abstract text available Text: Ceramic Disc Capacitors Part Number System CD12E103M50 -10TRIK 1 2 3 4 5 6 7 8 1. CD= Ceramic Disc 2. Diameter in millimeters 3. Temperature Coefficient Letter EIA Code Temperature Coefficient A NPO/COH 0 ± 60 ppm/°C SL SL +350/-1000 ppm/°C B Y5P ±10%	Original	PDF	CD12E103M50 -10TRIK 470pFLead
Tantalum Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	PDF	CGH35060F CGH35060F CGH3506 Tantalum CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060-TB s-parameter
A 12-15 GHz High Gain Amplifier Abstract: HEADER RT Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT
CGH35060 Abstract: CGH35060F Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	PDF	CGH35060F CGH35060F CGH3506 10failure CGH35060
syntron rectifier Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106 Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES	Original	PDF
Untitled Abstract: No abstract text available Text: Molex.com RegisterLogin INDUSTRIESCONTACT USNEWS & EVENTSABOUT USINVESTORSCAREERS SEARCH Enter Part No. or Keyword Go	Original	PDF	33003901C12O
744786022 Abstract: 748323024 748421245 748422245 748420245 WE 748422245 748351124 74478 7483 speedy TRANSFORMER Text: WE Produktkatalog WE Group Page 1 of 2 EMC & Inductive Solutions EMC Ferrites Inductors RF Inductors LTCC Components Design Kits for RF Components To Product Overview Transformer Electromechanical Components RF Components Circuit Protection EMI Material and D-SUB Filters	Original	PDF
10UF Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238 Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	PDF	CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238

bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28 V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	PDF	CGH35015 CGH35015 CGH3501 35015S
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	PDF	CGH35015 CGH35015 CGH3501 35015S
transistor 8772 Abstract: Transistor C 4927 8772 transistor CGH35030F Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor
transistor E 13007 Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251 Text: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which	Original	PDF	CGH35015S CGH35015S CGH3501 transistor E 13007 54-619 msl 9351 s-parameters cree marking information 00457 43251
102 capacitor Abstract: CERAMIC DISK CAPACITOR ny2 capacitor t x5u capacitor 10kv 2200 CERAMIC DISK CAPACITOR marking z5p x1y1 RS-198-C X1000 CK8Y5P102KX1Y1 Text: HIGH VOLTAGE CERAMIC DISK CAPACITORS - CK2 AND NY2 SERIES Introduction These ceramic capacitors use high dielectric constant K>1000 ferroelectric materials based on barium titanate. Key features of this capacitor class include its non-linear temperature	Original	PDF	3300Y5U 102 capacitor CERAMIC DISK CAPACITOR ny2 capacitor t x5u capacitor 10kv 2200 CERAMIC DISK CAPACITOR marking z5p x1y1 RS-198-C X1000 CK8Y5P102KX1Y1
Untitled Abstract: No abstract text available Text: WiMAX Antenna W ire l ess S o l utions Innovative Technology for a Connected World World-Leading Solutions A Brief Introduction to WiMAX Laird Technologies’ world class engineering teams utilize proprietary, stateof-the-art design tools to create antenna products that maximize total system	Original	PDF	J23014V00-120N J51016V00-90N JBXRK-01-TM5
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	PDF	CGH35060F CGH35060F CGH3506
500WVDC Abstract: No abstract text available Text: HI-K. TYPE HIGH DIELECTRIC CONSTANT CLASS 2 100WVDC & UNDER pf DIAMETER TEMPERATURE CHARACTERISTIC Dø ± 1m/m Y5F Y5P Z5U Z5V 4 100-470 200-1000 1000-2700 1000-5000 5 500-680 1200-1500 3000-3900 5600-8200 6 820-1000 1800-2200 4000-5600 10000 8 1200-2700	Original	PDF	100WVDC 500WVDC 500WVDC
Untitled Abstract: No abstract text available Text: C eram ic D isc C ap acito rs C lass II H igh D ielectric C onstant S p ecificatio n s Features • Operating temperature range: -25°C +85°C • Rated working voltage: 50VDC, 500VDC. • Capacitance: Within the tolerance at 1 KHz, 1 to 3V rms, 25°C. • Test voltage: 2.5 times the rated voltage	OCR Scan	PDF	50VDC, 500VDC. 000MQ 200MQpF, D51b0t 00014T1

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330039 Search Results

330039 Price and Stock

Amphenol SV Microwave 7033-0039

Microchip Technology Inc MA330039

3M Interconnect 7100330039

Molex 0366330039

Phoenix Contact 1050033:0039

330039 Datasheets Context Search

k2645

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0.1 uf Ceramic disc Capacitors 104

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Tantalum

A 12-15 GHz High Gain Amplifier

CGH35060

syntron rectifier

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744786022

10UF

bcm 4330

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transistor 8772

transistor E 13007

102 capacitor

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500WVDC

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