330 TRANSISTOR Search Results

IRFP 740

Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Contextual Info: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7

IRFP 740

Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Contextual Info: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6

irfp 950

Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

mpsa42 "sot23"

Abstract: MPSA42 sot-223 siemens bfp22
Contextual Info: Transistors _ . For complete package outlines, refer to pages PO-1 through PO-6 Dual Transistors VCEO N=NPN *c Px fr I CBO at niA mW MHz nA VCEX V 45 45 45 200 200 200 330 330 330 250 250 250 < 15 < 15 <15 30 30 30 7c fx a ‘ N P VCBO V P=PNP BC847S BC847PN

FUSE fast

Abstract: PKT 4113
Contextual Info: AUTOMATIONWORX User Manual UM EN ILC 330/350 Order No.: 2699370 Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M and ILC 350 PN Inline Controllers AUTOMATIONWORX User Manual Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M

Contextual Info: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Vbs 500 V hi 9.5 A % S on Package Ordering Code 0.6 n TO-218AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

Contextual Info: Wfiol mL/ÎMHEWLETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 combines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN

Contextual Info: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Yds 500 V k> ^DS on Package Ordering Code 9.5 A 0.6 n TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

TRANSISTOR W2

Abstract: PRSS0004ZG-A PRSP0014DE-B PRSS0004ZD-C HSOP-11 DPak Package Renesas
Contextual Info: Unit:mm Reel type A Ｂ Ｃ A 330 330 330 P1 8 8.0 8.0 A0 6.9 6.8 6.5 N 100 100 74-81 W1 16.4 17.4 17-19 W2 22.4 21.4 21-23 16-mm width emboss taping Taping code Package name W202-104-XX MP-3A Z1575F, 76F EMBOSS DPAK S HSOP-11 Renesas code Previous code PRSS0004ZG-A TMP3

HXTR-2001

Abstract: S21E 210SC
Contextual Info: COMPONENTS GENERAL PURPOSE TRANSISTOR CHIP Features HXTR-2001 CIRCUITS H E W L E T T ^ PACKARD 330 0.013 TYP. - HIGH OUTPUT POWER 20.0 dBm PidB Typical at 2 GHz LOW NOISE FIGURE 3.8 dB Typical at 4 GHz ' 90 (0.0035) 330 (0.013) FOR HYBRID . 1 . . WIDE DYNAMIC RANGE

AGC-330

Contextual Info: whn 1"KM H Ew LETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 com bines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN

23P transistor sot 23

Abstract: PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d
Contextual Info: Unit:mm Reel type A B Ｃ Ｄ E F A 330 330 178 178 330 178 W 12 12 12 P1 8 8 8 A0 4.8 6.9 7 12.0 8.0 4.8 N 80 100 60 60 100 66 W1 13.5 13.5 13 13 13.4 13.5 W2 17.5 17.5 17 15.4 17.4 15.5 12-mm width emboss taping Taping code Package name Renesas code Previous code

Contextual Info: H Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300␣MHz The AGC-330 combines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN diodes with 0 to 5-volts DC

buz33

Abstract: BUZ 60A
Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 330 • N channel • Enhancement mode • Avalanche rated Type v DS lo Tc ^DS on Package 1> Ordering Code BUZ 330 500 V 9.5 A 28 ’C 0.6 Í2 TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3105-A2

Contextual Info: BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 330 500 V 9.5 A 0.6 Ω TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3105-A2

Contextual Info: BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 330 500 V 9.5 A 0.6 Ω TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M 330-400MHz 7W 7.2V PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz

hatfield attenuator

Abstract: RF MOSFET MODULE RA07H3340M RA07H3340M-01 RA07H3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to

TRANSISTOR 1300

Abstract: L-Band 1200-1400 MHz RT 6010.5 LM 1214-370M 1200 - 1400 MHz, L-Band Applications
Contextual Info: 1214-370MR4 1214 – 370M . 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370M is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to

RA07N3340M

Abstract: RA07N3340M-01 RA07N3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz

hatfield attenuator

Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz

1214-110

Abstract: 1214-110M
Contextual Info: 1214-110M 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed

RA55H3340M-101

Abstract: RA55H3340M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3340M 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to