IRFP 740
Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7
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IRF742FI
IRF740
IRF740FI
SGSP475
SGSP575
IRF350
IRFP350FI
TSD4M350V
IRF823
IRF823FI
IRFP 740
SGSP364
sgsp369
TSD4M250V
IRF 810
IRFP150
SGS100MA010D1
TSD4M351V
220 to 110 power
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IRFP 740
Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Text: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6
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MTP3N60
MTH6N60
MTP6N60
IRFP 740
IRF 810
IRF 426
irf transistors
irfp 730
BUZ 82
Diodes BUZ C 840
irf 840
Diodes BUZ 840
BU 102
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irfp 950
Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6
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SGS35MA050D1
TSD4M450V
MTP3N60
MTP3N60FI
MTH6N60FI
MTP6N60
STHV82
STHV102
TSD5MG40V
STHI07N50FI
irfp 950
SGSP479
transistor BUZ45
SGSP369
BUZ74
IRFP 740
IRF 950
SGSP239
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DIODE F22
Abstract: 1300 3d
Text: ptot VCE0 VCB0 VCEX* T/v=25°C min. <W> V 10 tt 1300* 10 tt 1500* 10 tt 1500* t 1700* 10 t 12.5 # 1300* 12.5 tt 1500* 12.5 t t 1500* t 1500* 12.5 t t 1700* 12.5 t 60 400 60 400 60 330 330 60 400 60 400 60 1300 75 75 1500 1700 75 400 90 400 90 330 90 90 330
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O-220
DIODE F22
1300 3d
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mpsa42 "sot23"
Abstract: MPSA42 sot-223 siemens bfp22
Text: Transistors _ . For complete package outlines, refer to pages PO-1 through PO-6 Dual Transistors VCEO N=NPN *c Px fr I CBO at niA mW MHz nA VCEX V 45 45 45 200 200 200 330 330 330 250 250 250 < 15 < 15 <15 30 30 30 7c fx a ‘ N P VCBO V P=PNP BC847S BC847PN
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BC847S
BC847PN
BC857S
OT363
OT363
OT223
mpsa42 "sot23"
MPSA42 sot-223
siemens bfp22
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Untitled
Abstract: No abstract text available
Text: HSP061-2Y Automotive 2-line ESD protection for high speed lines Datasheet - production data Complies with following standards: • ISO 10605 - C = 150 pF, R = 330 Ω – 30 kV air discharge – 15 kV (contact discharge) • ISO 10605 - C = 330 pF, R = 330 Ω
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HSP061-2Y
HSP061-2P6Y
OT666
HSP061-2Y
DocID024471
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PDF
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TLSR-33
Abstract: TI23 Telefunken Electronic
Text: TELEFUNKEN ELECTRONIC 17E J> • fl'îSDO'ît D0DR07b 1 TLS.330. Tm iLIIIFW flKiM electronic T - * H - a 3 Creative TechntrfoQ«« Symbol LED's —3 x 3 mm D in tinted top diffused package Color Type Technology Red TLSR 330. GaAsP on GaAs Orange-red TLSO 330.
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D0DR07b
TLSR-33
TI23
Telefunken Electronic
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M 330-400MHz 7W 7.2V PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz
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RA07M3340M
330-400MHz
RA07M3340M
400-MHz
3VAL10
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RA07N3340M
Abstract: RA07N3340M-01 RA07N3340M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz
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RA07N3340M
330-400MHz
RA07N3340M
400-MHz
RA07N3340M-01
RA07N3340M-E01
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hatfield attenuator
Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz
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RA13H3340M
330-400MHz
RA13H3340M
13-watt
400-MHz
hatfield attenuator
RF MOSFET MODULE
RA13H3340M-01
RA13H3340M-E01
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IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
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DP-330
Abstract: Vari-L Company transformer 204C 213B c11fb
Text: DP-330 Wideband RF/Pulse Transformer .5-150 MHz im i TYPICAL PERFORMANCE GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL DP-330 Type: 50 ohm unbalanced 450 ohm unbalanced The DP series is composed of three -rarvsformers offering the most common configurations in
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DP-330
MIL-T-55631
DP-330
MIL-STD-202E
MIL-STD-1276.
Vari-L Company transformer
204C
213B
c11fb
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PDF
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Untitled
Abstract: No abstract text available
Text: DP-330 Wideband RF/Pulse Transformer .5-150 MHz mi GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL DP-330 Type: 50 ohm unbalanced 450 ohm unbalanced The DP senes is composed of three transformers offering the most common configurations in
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DP-330
MlLT-55631
5-15TIONS
MIL-STD-202E.
MIL-STD-202E
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PDF
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Untitled
Abstract: No abstract text available
Text: im i GUARANTEED MINIMUM PERFORMANCE DATA DP-330 Wideband RF/Pulse Transformer .5-150 MHz TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL DP-330 Type: 50 ohm unbalanced ¿50 nhm unbalanced - 1 dB Bandwidth. MHz The DP senes is composée of three uanstormers offeririg Ihe
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DP-330
LT-55631
MIL-STD-202E.
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RA07H3340M
Abstract: RA07H3340M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz
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RA07H3340M
330-400MHz
RA07H3340M
400-MHz
RA07H3340M-01
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ADV7391
Abstract: Video-Encoders adv7393 YPbPr AD723 material declaration ADV7170
Text: Analog Devices: ADV7123: 330 MHz Triple 10-Bit High Speed Video . 1 of 3 /. ADV7123: 330 MHz Triple 10-Bit High Speed Video DAC The ADV7123 ADV is a triple high speed, digital-to-analog
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ADV7123:
10-Bit
ADV7123
10-bit,
342kB)
ADV7123
ADV7391
Video-Encoders
adv7393 YPbPr
AD723
material declaration
ADV7170
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PDF
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RA07M3340M
Abstract: RA07M3340M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz
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Original
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RA07M3340M
330-400MHz
RA07M3340M
400-MHz
RA07M3340M-01
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PDF
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
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RA30H3340M
RA30H3340M
30-watt
400-MHz
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
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Original
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RA30H3340M
330-400MHz
RA30H3340M
30-watt
400-MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Wfiol mL/ÎMHEWLETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 combines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN
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AGC-330
AGC-330
44475S4
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360 to 400 mhz rf amplifier module
Abstract: RA07H3340M-101 RF MOSFET MODULE RA07H3340M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz
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Original
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RA07H3340M
330-400MHz
RA07H3340M
400-MHz
360 to 400 mhz rf amplifier module
RA07H3340M-101
RF MOSFET MODULE
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PDF
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85C225
Abstract: J4-40007
Text: J4-40006 / 40007 / 40008 ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY INSERTION LOSS dB ISOLATION (dB) 25.0 27.5 30.0 32.5 35.0 0.0 0.25 0.5 0.75 1.0 225 260 295 330 365 400 225 260 295 330 365 400 FREQUENCY (MHz) FREQUENCY (MHz) 3 2 0.5 PHASE BALANCE
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J4-40006
J4-40006
J4-40008
J4-40007
85C225
J4-40007
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PDF
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RA07H3340M-101
Abstract: RA07H3340M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz
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Original
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RA07H3340M
330-400MHz
RA07H3340M
400-MHz
RA07H3340M-101
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PDF
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LMH6639MF
Abstract: LMH6639MFX LMH6642 MAX4131 VIP10 AD8041 LMH6639 LMH6639MA LMH6639MAX
Text: National News LMH6639 February 2002 www.national.com/pf/LM/LMH6639.html LMH6639 is a Single Supply, High-Speed 190 MHz RRO Amplifier Featuring Low Power, Wide Voltage (3-10V) and Shutdown Typical Application 330 330 1k 5V 2 7 - 6 LMH6639 3 FREQ 1 1k 2 3
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LMH6639
com/pf/LM/LMH6639
LMH6639
LMH6642
VIP10
LMH6639MF/MFX
LMH6639MF
LMH6639MFX
LMH6642
MAX4131
VIP10
AD8041
LMH6639MA
LMH6639MAX
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PDF
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