Untitled
Abstract: No abstract text available
Text: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor
|
Original
|
PDF
|
2500VRMS
RS-485/RS-422
MAX3535E/MXL1535E
RS-485/RS-422
1000kbps
MAX3535E/MXL1535E
420kHz
RS-485
|
halo tgm-240ns
Abstract: TGM-250NS TGM-340 midcom 31160r HALO TGM-350 tgm-240ns TGM-250 TGM-240 CTX01-14659 TGM-240NS 6 pin
Text: 19-3270; Rev 0; 4/04 +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor
|
Original
|
PDF
|
2500VRMS
RS-485/RS-422
MAX3535E/MXL1535E
RS-485/RS-422
1000kbps
MAX3535E/MXL1535E
420kHz
RS-485
halo tgm-240ns
TGM-250NS
TGM-340
midcom 31160r
HALO TGM-350
tgm-240ns
TGM-250
TGM-240
CTX01-14659
TGM-240NS 6 pin
|
TGM-240NS 6 pin
Abstract: TGM-250NS
Text: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor
|
Original
|
PDF
|
2500VRMS
RS-485/RS-422
MAX3535E/MXL1535E
1000kbps
420kHz
RS-485
TGM-240NS 6 pin
TGM-250NS
|
halo tgm-240ns
Abstract: TGM-240NS TGM-250 midcom 31160r TGM-240 CTX01-14659 TGM-250NS Cooper CTX01-14608 CTX01-14608 TGM-450
Text: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor
|
Original
|
PDF
|
2500VRMS
RS-485/RS-422
MAX3535E/MXL1535E
RS-485/RS-422
1000kbps
MAX3535E/MXL1535E
420kHz
RS-485
halo tgm-240ns
TGM-240NS
TGM-250
midcom 31160r
TGM-240
CTX01-14659
TGM-250NS
Cooper CTX01-14608
CTX01-14608
TGM-450
|
B78304-A1477-A3
Abstract: TGM-240 CTX01 31160r
Text: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor
|
Original
|
PDF
|
2500VRMS
RS-485/RS-422
MAX3535E/MXL1535E
1000kbps
420kHz
RS-485
B78304-A1477-A3
TGM-240
CTX01
31160r
|
pulse transformer driver ic
Abstract: tgm-240ns halo tgm-240ns B78304-A1477-A3 epcos rs485 HALO TGM-350 MV power transformers TGM-250 CTX01-14659 Cooper CTX01
Text: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor
|
Original
|
PDF
|
2500VRMS
RS-485/RS-422
MAX3535E/MXL1535E
RS-485/RS-422
1000kbps
MAX3535E/MXL1535E
420kHz
RS-485
pulse transformer driver ic
tgm-240ns
halo tgm-240ns
B78304-A1477-A3
epcos rs485
HALO TGM-350
MV power transformers
TGM-250
CTX01-14659
Cooper CTX01
|
pnp Transistor TO92 5V 200mA
Abstract: ZTX755 ZTX776 DSA003775 3270 transistor
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX776 ISSUE 1 JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B REFER TO ZTX755 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
|
Original
|
PDF
|
ZTX776
ZTX755
-160V,
-500mA,
-50mA*
-200mA*
-10mA,
pnp Transistor TO92 5V 200mA
ZTX776
DSA003775
3270 transistor
|
d686* transistor
Abstract: westcode igbt transistor 1GE
Text: WESTCODE Data Sheet Issue:- 1 IXYS Company An Date:- 2 Aug, 2005 Prospective data Insulated Bi-Polar Gate Transistor Type TX168NA17A Development Type Number Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage
|
Original
|
PDF
|
TX168NA17A
TX168NA17A
d686* transistor
westcode igbt
transistor 1GE
|
MJ 5030
Abstract: westcode igbt
Text: Date:- 18 Jun, 2003 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T0250NA52E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
PDF
|
T0250NA52E
MJ 5030
westcode igbt
|
D-68623
Abstract: T0240 westcode igbt
Text: An IXYS Company Provisional Data Data Sheet Issue:- 3 WESTCODE Date:- 1 Dec, 2005 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0240NA45E MAXIMUM LIMITS UNITS 4500 V Collector – emitter voltage VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
PDF
|
T0240NA45E
T0240NA45E
D-68623
T0240
westcode igbt
|
transistor 600v 500a
Abstract: T0500NA25 D-68623 T0500 ic 90807
Text: WESTCODE Date:- 10 Mar, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T0500NA25E Development Type Number: TX044NA25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage
|
Original
|
PDF
|
T0500NA25E
TX044NA25E)
T0500NA25E
transistor 600v 500a
T0500NA25
D-68623
T0500
ic 90807
|
T1500TA25E
Abstract: transistor polar D-68623 T1500
Text: Date:- 1 Dec, 2003 Prospective data Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T1500TA25E MAXIMUM LIMITS UNITS Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
PDF
|
T1500TA25E
T1500TA25E
transistor polar
D-68623
T1500
|
Untitled
Abstract: No abstract text available
Text: An IXYS Company Provisional Data Data Sheet Issue:- 1 WESTCODE Date:- 29 Jul, 2004 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0250NA45E MAXIMUM LIMITS UNITS 4500 V Collector – emitter voltage VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
PDF
|
T0250NA45E
T0250NA45E
|
IC500A
Abstract: t0800ta45e D-68623 T0800 transistor D 982
Text: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
PDF
|
T0800TA45E
T0800TA45E
IC500A
D-68623
T0800
transistor D 982
|
|
T2400GA45E
Abstract: MJ6000 T2400
Text: Date:- 22 Nov, 2005 Data Sheet Issue:- 1 Prospective Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
PDF
|
T2400GA45E
VCES/100
T2400GA45E
MJ6000
T2400
|
D6025
Abstract: stud6025nl
Text: STU/D6025NL Green Product Feb 25,2006 Ver1.2 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mΩ) Super high dense cell design for low RDS(ON). Typ Rugged and reliable.
|
Original
|
PDF
|
STU/D6025NL
O-252
O-251
O-252AA
U/D6025NL
O-252
D6025
stud6025nl
|
TSHA3400
Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Text: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538
|
OCR Scan
|
PDF
|
SEP8505/8525
SEP8506/8526
SEP8405/8425
SEP8406/8426
SEP8403
HOA708
HOA0860
HOA0870
LTR-209
LTR-301
TSHA3400
"Photo Interrupter" sharp
306 transistor
Infrared emitter
TELEFUNKEN infrared
"Photo Interrupter"
380 transistor
LTR-536AD
LTE-302-M
LTE5238A
|
3170R
Abstract: CA3170
Text: M OT OR OL A SC XSTRS/R F 12E D | G Gf lô S Sf l 3 | T-74'itf- MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA C A 3170 C A 3170R C A 3270 C A 3270R The RF Line 4 0 -C h an n e l 330 M H z C A T V In p u t/O u tp u t T ru n k A m p lifie rs . designed for broadband applications requiring low-distortion amplification. Specifi
|
OCR Scan
|
PDF
|
CA3170)
40-channel
CA3270
CA3170
CA3270/R
3170R
|
Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - JU LY 94 FEATU RES * 200 Volt VCE0 * 1 A m p continuous current * Ptot= 1 W a tt REFER TO Z TX 755 FOR G R A P H S E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage
|
OCR Scan
|
PDF
|
-100hA
-160V,
-500mA,
-50mA*
-200mA*
-10mA,
|
Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - JULY 94 FEATURES * * 200 V olt VCE0 1 A m p continuous current * Ptot= 1 W att REFER TO ZTX755 FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT
|
OCR Scan
|
PDF
|
ZTX755
001G35S
|
K1461
Abstract: BD180 transistor with gain 10 BD176 BD179 BD176 motorola
Text: MOTO RO LA SC XSTRS/R 1EE D § F MOTOROLA 0004715 b | BD176,-6,-10,-16 BD180,-6,-10 SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 3.0 AMPERES POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers
|
OCR Scan
|
PDF
|
BD180
BD179
BD176
K1461
transistor with gain 10
BD179
BD176 motorola
|
Untitled
Abstract: No abstract text available
Text: 4bE D • b3b?2S4 MOTOROLA 00=12^5 SC 3 ■ X S TR S /R P I0T b T ^33- 7 F) MOTOROLA SEMICONDUCTOR tm m m tm m m m m m m b h TECHNICAL DATA Ükä DM0 2C3792HV Chip PNP Silicon Power Transistor iiif in Discrete . . .designed for m edium -speed switching and amplifier applications.
|
OCR Scan
|
PDF
|
2C3792HV
|
FZT867
Abstract: 3268
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - FEBRUARY 1996 O FZT857 - FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * V CEO = 3 0 0 V * Very low saturation voltage * Excellent hFEspecified up to 3 Amps
|
OCR Scan
|
PDF
|
OT223
FZT857
FZT867
FZT957
3268
|
IRFF223
Abstract: IRFF222 IRFF220 IRFF221
Text: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m
|
OCR Scan
|
PDF
|
IRFF220,
IRFF221,
IRFF222,
IRFF223
1RFF221,
IRFF222
IRFF223
IRFF220
IRFF221
|