71RA50
Abstract: CSR BC4 a10ra11r
Text: TOSHIBA THM72V4030BTG60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTHM 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC 51V16400BS T on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large
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THM72V4030BTG60/70
72V4030BTG
51V16400BS
THMxxxxxx-60)
THMxxxxxx-70)
THM72V4030BTG-6OÏ
DM32061195
DM32061195
THM72V4030BTG
THM72V4030BTG-60/70
71RA50
CSR BC4
a10ra11r
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SS421L
Abstract: TA 2092 N
Text: LOW WHEN FREQUENCY IS GREATER THAN SET POINT A B S O L U T E M A X I MUM R A T I N G S . C i r c u i t f u n c t i o n is not g u a r a n t e OPTL 2X R.010 Z I / 2X 45 !_ . 1 4 4 ± . 002 xceeded, TPM 1.1 PARAMPTER AMB I E N T T E M P P R A T U R E MI N
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SS421L
SS421L
TA 2092 N
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Untitled
Abstract: No abstract text available
Text: 64K X 18, 32K x 32/36 3.3V I/O, F L O W -T H R O U G H S Y N C B U R S T SRAM I^ IIC R D N MT58LC64K18B3, MT58LC32K32B3, MT58LC32K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • • • • • • •
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MT58LC64K18B3,
MT58LC32K32B3,
MT58LC32K36B3
100-lead
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KC102
Abstract: No abstract text available
Text: |v i i c : 64K X 18, 32K x 32/36 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM r o n MT58LC64K18D8, MT58LC32K32D8, MT58LC32K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •
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MT58LC64K18D8,
MT58LC32K32D8,
MT58LC32K36D8
KC102
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I|— C 3nP vl I Mi — 128K x 18, 64K x 32/36 2. 5V I/O, FLOW -THROUGH SYN CBUR ST SRAM MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 SYNCBURST SRAM 3.3V Supply, 2.5V I/O, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • •
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MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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X3286
Abstract: No abstract text available
Text: ADVANCE 128K x 18, 6 4 K x 32/36 3.3V I/O. F L O W -T H R O U G H S Y N C B U R S T SR AM M IC R O N MT58LC128K18B3, MT58LC64K32B3, MT58LC64K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • • • •
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MT58LC128K18B3,
MT58LC64K32B3,
MT58LC64K36B3
X3286
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Untitled
Abstract: No abstract text available
Text: 128K X 18. 64K x 32/36 3.3V I/O, PIPELINED, SCD S Y N C B U R S T SR AM p ilC IR O IS J MT58LC128K18D8, MT58LC64K32D8, MT58LC64K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • •
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MT58LC128K18D8,
MT58LC64K32D8,
MT58LC64K36D8
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 256K x 18,128K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM • Q X /M f^ D I in Q T O T I M v D U l l O I MT58LC256K18B4, MT58LC128K32B4, MT58LC128K36B4 SRAM 3.3V Supply, Flow-Through and Burst FEATURES • • • • • • • • •
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MT58LC256K18B4,
MT58LC128K32B4,
MT58LC128K36B4
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •
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MT58L512L18F,
MT58L256L32F,
MT58L256L36F;
MT58L512V18F,
MT58L256V32F,
MT58L256V36F
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Untitled
Abstract: No abstract text available
Text: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU MT55L128L18F, MT55L64L32F, MT55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
55L128L18F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P;
MT55L256V18P,
MT55L128V32P,
MT55L128V36P
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Untitled
Abstract: No abstract text available
Text: M m P ¿M O : 1 ¿O K X 1 « , b 4 K X 6 Z / 6 b n M I 3.3V I/O, PIPELINED ZBT SRAM O lV ilU ^ IV IU MT55L128L18P, MT55L64L32P, MT55L64L36P ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns
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MT55L512L18F,
MT55L256L32F,
MT55L256L36F;
MT55L512V18F,
MT55L256V32F,
MT55L256V36F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18F,
MT55L128L32F,
MT55L128L36F;
MT55L256V18F,
MT55L128V32F,
MT55L128V36F
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times
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MT58L512L18D,
MT58L256L32D,
MT58L256L36D
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2TC6
Abstract: L710001
Text: Advance Information This document contains information on a product under development. Specifications are subject to change without notice. Distinguishing Features Arbitrary Scaling of Raster Bit Maps from 5% through 750% Scale Down Reduce and Scale Up (Enlarge) Capability
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132-pin
Bt710
Bt710KG
Bt700EVK
2TC6
L710001
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Untitled
Abstract: No abstract text available
Text: in t e l 5 1 C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 150 Maximum Access Time ns 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHM OS Standby Current (mA) 0.1 0.1 Static Column Mode Operation
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C259HL
51C259HL
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128K X 18, 64Kx 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. SYNCBURST SRAM MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect FEATURES • Fast access times: 3.5ns, 3.8ns, 4.2ns, 4.5ns and 6ns
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MT58LC128K18C6,
MT58LC64K32C6,
MT58LC64K36C6
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128K X 18, 64Kx 32/36 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58LC128K18D9, MT58LC64K32D9, MT58LC64K36D9 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect FEATURES • Fast access times: 3.5ns, 3.8ns, 4.2ns, 4.5ns and 6ns
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MT58LC128K18D9,
MT58LC64K32D9,
MT58LC64K36D9
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Q67100-H6122
Abstract: e1111 CSR 1010 f0p8 ITP03783 LN15 musac IRD 110 IRD110 SIEMENS PEB 2245 N
Text: S IE M E N S Multipoint Switching and Conferencing Unit MUSAC PEB 2245 Prelim inary Data CMOS 1C Features Switching • Tim e/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM -channels to up to 256 outgoing PCM channels
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8192-kbit/s
8192-kHz
A235b05
Q67100-H6122
e1111
CSR 1010
f0p8
ITP03783
LN15
musac
IRD 110
IRD110
SIEMENS PEB 2245 N
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CY7C1361V25
Abstract: CY7C1363V25
Text: C Y 7 C 1 3 6 1 V 25 C Y 7 C 1 3 6 3 V 25 PRELIMINARY ~= C Y P H hbb = 256K x 36 / 512K x 18 Flowthrough SRAM Functional Description Features • Supports 113-MHz bus operations The CY7C1361V25 and CY7C1363V25 are 2.5v, 256K x 36 and 512K x 18 synchronous-flowthrough SRAM designed to
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CY7C1361V25
CY7C1363V25
113-MHz
117-MHz
100-MHz
80-MHz
100-pin
CY7C1361V25
CY7C1363V25
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Untitled
Abstract: No abstract text available
Text: N E pPD75316 Family #iPD75304/306/308/312/316/P308/P316/P316A 4-Bit, Single-Chip Microcontrollers W ith LCD Controller/Driver C NEC Electronics Inc. March 1994 Description The yjPD75316 fam ily of high-perform ance 4-bit single chip CMOS m icrocontrollers includes the follow ing
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pPD75316
iPD75304/306/308/312/316/P308/P316/P316A)
yjPD75316
JPD75304
pPD75312
pPD75P316
/JPD75306
/JPD75316
/JPD75P316A
/JPD75308
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Untitled
Abstract: No abstract text available
Text: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM Q X /M f^ D I in Q T O T I M v D U l l O I MT58LC256K18D9, MT58LC128K32D9, MT58LC128K36D9 C D A M 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect
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MT58LC256K18D9,
MT58LC128K32D9,
MT58LC128K36D9
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Untitled
Abstract: No abstract text available
Text: ADVANCE i m n N 1 2 8 K x 18, 6 4 K x 32/36 LVTTL, F L O W - T H R O U G H Z B T S R A M O ^ M h MT55L128L18F, MT55L64L32F, MT55L64L36F 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
MT55l128l18F
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