31MAY2005 Search Results

p60n

Abstract: JESD97 P60NH2LL STP60NH2LL
Contextual Info: STP60NH2LL N-channel 24V - 0.010Ω - 40A TO-220 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP60NH2LL 24V <0.011Ω 40A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - .52 10.0 # .15 [393.7 # 6] 1-1435791-0 5.0 # .08 [196.9 # 3] 1435791-5 .52 7.0 # 0.08 [275.6 # 3] .50 3.0 # .05 [118.1 # 2.0] .50 1.0 # .05 [39.4 # 2.0]

VIPer12A applications

Abstract: viper12a application note VIPER IC AN1357 ic viper12a vip*12a viper12a BZX55C18V pwm schematic buck converter zener diode 18V 1.5W
Contextual Info: AN1357 - APPLICATION NOTE VIPower: LOW COST POWER SUPPLIES USING VIPer12A IN NON ISOLATED APPLICATIONS INTRODUCTION The industrial field is asking for an increasing number of low power low voltage applications both in isolated and non isolated topology. The main specification is related to the cost of the power converter,

4357

Abstract: AMP MT-RJ - MT-RJ lc CONNECTOR DRAWING MT-RJ ferrule
Contextual Info: THIS £ L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC 1- 14357 94 -0 CVI LO CV LO [ 3 9 3 . 7 ± 6 ] 7 . 0 ± 0 .08 [ 2 7 5 . 6±3] 1435794-7 5 . 0 ± . 08 . 50 3 . 0 ± .05 [ 1 9 6 . 9±3]

CR10

Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
Contextual Info: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)

ENCH14

Abstract: SA630D Philips Capacitor datasheet Philips Capacitor
Contextual Info: RF COMMUNICATIONS PRODUCTS OUTPUT/INPUT INPUT/OUTPUT OUTPUT/INPUT ENCH1 SA630 Single pole double throw SPDT switch Product Specification Replaces data of October 10, 1991 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification

qfn16 2.5x2.5

Abstract: QFN16
Contextual Info: STG3699A LOW VOLTAGE 0.5Ω MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE • ■ ■ ■ ■ ■ HIGH SPEED: tPD = 1.5ns TYP. at VCC = 3.0V tPD = 1.5ns (TYP.) at VCC = 2.3V ULTRA LOW POWER DISSIPATION: ICC = 0.2µA (MAX.) at TA = 85°C LOW "ON" RESISTANCE VIN=0V:

QFN16

Abstract: qfn16 2.5x2.5
Contextual Info: STG3699A LOW VOLTAGE 0.5Ω MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE • ■ ■ ■ ■ ■ HIGH SPEED: tPD = 1.5ns TYP. at VCC = 3.0V tPD = 1.5ns (TYP.) at VCC = 2.3V ULTRA LOW POWER DISSIPATION: ICC = 0.2µA (MAX.) at TA = 85°C LOW "ON" RESISTANCE VIN=0V:

F24NF12

Abstract: dt-600A F24NF stf*24nf12 JESD97 ST 0366
Contextual Info: STF24NF12 N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET II MOSFET General features Type VDSS RDS on ID STF24NF12 120V <0.077Ω 24A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization

Contextual Info: THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 . 53 20 LOC 00 R 1G H T S R E S E RV E D. 2 0 . 0 ± .20 [ 7 8 7 . 4 ± 7 .9] 2-1435796-0 . 52 1 0 . 0 ± . 15

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC 00 RESERVED. CVI CVI LO LO 1 0 . 0 ± . 15 [ 3 9 3 .7±6 ] 1- 1 4 3 5 7 92 -0 7 . 0 ± 0 .08 [2 7 5 .6±3] 1435792-7 .5 1

MT-RJ ferrule

Abstract: lc CONNECTOR DRAWING
Contextual Info: 2 THIS ici DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC 1 0 . 0 ± .15 [393.7 ± 6 ] 1- 14 357 93 -0 CVI LO 7 . 0 ± 0 . 08 [2 7 5 .6±3] 1435793-7 .5 1 5 . 0 ± . 08 . 50 3 . 0 ± .05

JESD97

Abstract: P60NH2LL STP60NH2LL p60n
Contextual Info: STP60NH2LL N-channel 24V - 0.010Ω - 40A TO-220 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP60NH2LL 24V <0.011Ω 40A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

Contextual Info: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their

9S12XEQ384

Abstract: 9s12xeq384 144 QFP 9S12XEP768 9S12XET256 9S12XEG128 9S12XEQ512 9S12XEP100 9S12x MC9S12XE100 9S12XE
Contextual Info: Freescale Semiconductor Product Preview 9S12XEFAMPP Rev. 0.11, 28-Mar-2006 MC9S12XE-Family 16-Bit Microcontroller Family with Enhanced System Integrity Features Introduction The new MC9S12XE-Family of micro controllers will take the innovation of today’s S12XD-Family a step

M58WR064HUL

Abstract: 04MAY2006
Contextual Info: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary „ Supply voltage –VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O Buffers – VPP = 12 V for fast Program (9 V tolerant)

1S1D

Contextual Info: STG3699A LOW VOLTAGE 0.5Ω MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE • ■ ■ ■ ■ ■ HIGH SPEED: tPD = 1.5ns TYP. at VCC = 3.0V tPD = 1.5ns (TYP.) at VCC = 2.3V ULTRA LOW POWER DISSIPATION: ICC = 0.2µA (MAX.) at TA = 85°C LOW "ON" RESISTANCE VIN=0V:

qfn16 2.5x2.5

Abstract: JESD97 QFN16L STG3699A STG3699AQTR STG3699AUTR
Contextual Info: STG3699A LOW VOLTAGE 0.5Ω MAX QUAD SPDT SWITCH WITH BREAK-BEFORE-MAKE FEATURE • ■ ■ ■ ■ ■ HIGH SPEED: tPD = 1.5ns TYP. at VCC = 3.0V tPD = 1.5ns (TYP.) at VCC = 2.3V ULTRA LOW POWER DISSIPATION: ICC = 0.2µA (MAX.) at TA = 85°C LOW "ON" RESISTANCE VIN=0V:

Contextual Info: STP60NH2LL N-channel 24V - 0.010Ω - 40A TO-220 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP60NH2LL 24V <0.011Ω 40A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

supercapacitor

Abstract: ZXT13N50DE6 supercap CAPACITOR 394J GS206 ZXM64NO2X balancing circuit for supercapacitor supercapacitor alternative to battery flash led circuit diagram ZXSC100
Contextual Info: CAP-XX APPLICATION NOTE No. 1004 Driving High-Power White LED Flash in Camera Phones Outline Supercapacitors with low ESR Equivalent Series Resistance and high capacitance are ideal components for use in pulsed-power applications, such as Flash LEDs and GPRS transmitters,