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    31C7 Search Results

    31C7 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TMAG5131C7DQDBZRQ1 Texas Instruments Automotive low-power (10 Hz, 1 µA) low-voltage (down to 1.65 V) Hall-effect switch 3-SOT-23 -40 to 125 Visit Texas Instruments
    SF Impression Pixel

    31C7 Price and Stock

    Murata Manufacturing Co Ltd GRM31C7U3A102JW32L

    CAP CER 1000PF 1KV U2J 1206
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    DigiKey GRM31C7U3A102JW32L Digi-Reel 7,864 1
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    GRM31C7U3A102JW32L Cut Tape 7,864 1
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    GRM31C7U3A102JW32L Reel 4,000 2,000
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    TTI GRM31C7U3A102JW32L Reel 2,000
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    TME GRM31C7U3A102JW32L 2,000
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    Ameya Holding Limited GRM31C7U3A102JW32L 2,000
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    Avnet Abacus GRM31C7U3A102JW32L Reel 11 Weeks 2,000
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    Chip One Stop GRM31C7U3A102JW32L Cut Tape 10,642
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    Murata Manufacturing Co Ltd GCM31C7U2J472JX03L

    CAP CER 4700PF 630V U2J 1206
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    DigiKey GCM31C7U2J472JX03L Cut Tape 1,500 1
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    GCM31C7U2J472JX03L Digi-Reel 1,500 1
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    Avnet Americas GCM31C7U2J472JX03L Reel 16 Weeks 2,000
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    TME GCM31C7U2J472JX03L 2,000
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    Chip One Stop GCM31C7U2J472JX03L Cut Tape 1,347
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    Texas Instruments TMAG5131C7DQDBZRQ1

    AUTOMOTIVE LOW-POWER (10 HZ, 1A)
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    DigiKey TMAG5131C7DQDBZRQ1 Cut Tape 1,273 1
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    TMAG5131C7DQDBZRQ1 Digi-Reel 1,273 1
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    Mouser Electronics TMAG5131C7DQDBZRQ1 4,268
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    TDK Electronics B41231C7109M000

    CAP ALUM 10000UF 20% 35V SNAP TH
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    DigiKey B41231C7109M000 Bulk 585 1
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    TDK Electronics B41231C7109M007

    CAP ALUM 10000UF 20% 35V SNAP TH
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    DigiKey B41231C7109M007 Bulk 149 1
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    31C7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    303F

    Abstract: PDIP28 U637256 ZMD AG
    Text: U637256 CapStore 32K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U637256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		U637256 U637256 D-01109 D-01101 303F PDIP28 ZMD AG PDF

    Plastic 32-pin 300 mil SOIC

    Abstract: STK14C88-345 303F STK14C88-3
    Text: STK14C88-3 32K x 8 AutoStore nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • “Hands-off” Automatic STORE with External 68µF Capacitor on Power Down • STORE to EEPROM Initiated by Software or AutoStore™ on Power Down


    Original     		STK14C88-3 200ns 100-Year 32-Pin STK14C88-3 Plastic 32-pin 300 mil SOIC STK14C88-345 303F PDF

    STK14C88

    Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
    Text: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems


    Original     		STK16C88 200ns 100-Year STK16C88 28-pin STK14C88 STK15C88 STK16C88-25 STK16C88-35 STK16C88-45 PDF

    303F

    Abstract: No abstract text available
    Text: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle


    Original     		UL634H256 303F PDF

    STK14C88-3NF35I

    Abstract: SOP32 data sheet STK14C88-3 Simtek STK14C88
    Text: STK14C88-3 32Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14C88-3 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


    Original     		STK14C88-3 32Kx8 STK14C88-3 256Kb ML0015 STK14C88-3NF35I SOP32 data sheet Simtek STK14C88 PDF

    16C88

    Abstract: architecture of TMS320C52 5v sram simtek NVSRAM to 15c 10k STK11C88 STK15C88 STK16C88 TITMS320
    Text: Applying the STK11C88, STK15C88 and STK16C88 32K x 8 nvSRAM Abstract SRAM Operations Simtek Corporation’s family of high speed 256 kilobit nonvolatile Static Random Access Memories includes the STK15C88 AutoStore and STK11C88 Software Store and STK16C88


    Original     		STK11C88, STK15C88 STK16C88 STK15C88 STK11C88 STK16C88 16C88 architecture of TMS320C52 5v sram simtek NVSRAM to 15c 10k TITMS320 PDF

    diode 6a4

    Abstract: U631H256SM 303F
    Text: U631H256xSM Advanced Information SoftStore 32K x 8 nvSRAM Customized Product Features Description F High-performance CMOS nonvolatile static RAM 32768 x 8 bits F 35 ns Access Time F 15 ns Output Enable Access Time F Software STORE Initiation F Automatic STORE Timing


    Original     		U631H256xSM M3015 D-01109 D-01101 diode 6a4 U631H256SM 303F PDF

    303F

    Abstract: PDIP28 U637256
    Text: U637256 Preliminary CapStore 32K x 8 nvSRAM Features Description F CMOS non- volatile static RAM 32768 x 8 bits F 70 ns Access Time F 35 ns Output Enable Access Time F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write Cycles to SRAM F Automatic STORE to EEPROM


    Original     		U637256 D-01109 D-01101 303F PDIP28 U637256 PDF

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 PDF

    303F

    Abstract: TSOP32 ZMD AG
    Text: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Features Description ! High-performance CMOS non- The UL634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


    Original     		UL634H256 UL634H256 D-01109 D-01101 303F TSOP32 ZMD AG PDF

    oz960

    Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO


    Original     		MPC7450 oz960 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763 PDF

    RTL8211E

    Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
    Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF

    sil1162

    Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
    Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM


    Original     		MPC7450 200PIN RPAK10P2C 1000BT SN74AUC1G04 sil1162 Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic PDF

    ISL9504

    Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS


    Original     		PDF

    U631H256SM

    Abstract: 303F U631H256 ZMD AG
    Text: Advanced Information U631H256xSM Customized Product SoftStore 32K x 8 nvSRAM Features Description F High-performance CMOS non- The U631H256SM has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to


    Original     		U631H256xSM U631H256SM D-01109 D-01101 303F U631H256 ZMD AG PDF

    STK14C88-C45I

    Abstract: STK14C88-5C35M CDIP32 STK14C88-NF25
    Text: STK14C88 32 K x 8 AutoStore nvSRAM Features Description • 25, 35, 45 ns read access and R/W cycle time ■ Unlimited read/write endurance The Cypress STK14C88 is a 256 Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each


    Original     		STK14C88 STK14C88 STK14C88-C45I STK14C88-5C35M CDIP32 STK14C88-NF25 PDF

    STK14C88-NF35U

    Abstract: SIMTEK CORPORATION 303F Plastic 32-pin 300 mil SOIC NVSRAM
    Text: STK14C88-NF35U 32Kx8 AutoStore nvSRAM with extended temperature FEATURES DESCRIPTION • 35 ns Read Access & R/W Cycle Time The Simtek STK14C88-NF35U is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell.


    Original     		STK14C88-NF35U 32Kx8 STK14C88-NF35U 256Kb ML0066 SIMTEK CORPORATION 303F Plastic 32-pin 300 mil SOIC NVSRAM PDF

    STK11C88-3

    Abstract: 303F
    Text: STK11C88-3 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • Operating VCC Range: 3.0V-3.6V The Simtek STK11C88-3 is a fast static RAM with a nonvolatile, electrically erasable PROM element incorporated in each static memory cell. The SRAM


    Original     		STK11C88-3 STK11C88-3 28-pin 303F PDF

    303F

    Abstract: PDIP28 U637256
    Text: U637256 Preliminary CapStore 32K x 8 nvSRAM Features Description 5 CMOS non- volatile static RAM 32768 x 8 bits 5 70 ns Access Time 5 35 ns Output Enable Access Time 5 ICC = 15 mA at 200 ns Cycle Time 5 Unlimited Read and Write Cycles to SRAM 5 Automatic STORE to EEPROM


    Original     		U637256 D-01109 D-01101 303F PDIP28 U637256 PDF

    Untitled

    Abstract: No abstract text available
    Text: STK12C88 SimTEK 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times • Store to EEPROM initiated by Hardware, Soft­ ware or AutoStore™ on Power Down • Recall to SRAM Initiated by Hardware Reset,


    OCR Scan     		STK12C88 200ns STK12C88 40-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: U 63 5 H 2 5 6 SOFTWARE NONVOLATILE RECALL HARDWARE PROTECT A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ opera­


    OCR Scan     		U635H256 PDF

    Untitled

    Abstract: No abstract text available
    Text: U 63 1 H 2 5 6 A v a i l a b l e in Q1 /97 Software Controlled 32Kx 8 nvSRAM Features Description □ High-performance CMOS non­ volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,15 and 20 ns G-Access □ Software STORE Initiation


    OCR Scan     		M3015 PDIP28 U631H256 PDF

    Untitled

    Abstract: No abstract text available
    Text: STK14C88-M 32 K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM MIL-STD-883 SM1TEK PRELIMINARY FEATURES DESCRIPTION • 35ns and 45ns SRAM Access Times The Simtek STK14C88-M is a fast static RAM with a nonvolatile, electrically-erasable PROM element


    OCR Scan     		STK14C88-M MIL-STD-883 STK14C88-M A274flfl7 STK14C88 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STK15C88 32K x 8 AutoStoré nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Simtek STK15C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element


    OCR Scan     		STK15C88 STK15C88 fl274flA7 fl274flà PDF