LD 7576 PS
Abstract: Laser Diode Frame Type ld 7576 DL-3180-121 3180 diode
Text: Ordering number : ENN7576 Infrared Laser Diode DL-3180-121 DL-3180-121 Infrared Laser Diode Frame Type Package Dimensions 1.75 3. 3 1.41 2.8 0.8 0.21 • Wavelength : 790 nm (Typ.) • Frame type • Ultra compact lightweight thin package • Straight leads
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ENN7576
DL-3180-121
LD 7576 PS
Laser Diode Frame Type
ld 7576
DL-3180-121
3180 diode
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Untitled
Abstract: No abstract text available
Text: 3180 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage600mí @I(FM) (A) (Test Condition)34 @Temp. (øC) (Test Condition)25’
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Current30
Voltage800
Voltage600mÃ
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AR2004LT
Abstract: 3180 diode
Text: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODE POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. + 39 010 6556234 - Fax + 39 010 6557519 Sales Office: Tel. + 39 010 6556775 - Fax + 39 010 6442510 AR2004LT Repetitive voltage up to
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AR2004LT
AR2004LT
3180 diode
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ANSALDO
Abstract: AR2004LT Ansaldo SPA
Text: ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori RECTIFIER DIODE Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - AR2004LT Repetitive voltage up to Mean forward current
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AR2004LT
ANSALDO
AR2004LT
Ansaldo SPA
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MZC400TS60U
Abstract: MZK400TS60U 3180 diode
Text: MZC400TS60U PRELIMINARY Fast Recovery Epitaxial Diode INT-A -PAK MZK400TS60U Ultra-FastTM Speed FRED Features • International standard package With DBC ceramic base plate Planar passivated chips Short recovery time Low switching losses Ultra-soft recovery behaviour
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MZC400TS60U
MZK400TS60U
250ns
MZC400TS60U
MZK400TS60U
3180 diode
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5504 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE
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NX5504
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Untitled
Abstract: No abstract text available
Text: PHOTO DIODE NR8300FP-CC φ 30 m InGaAs APD IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATION AND OTDR APPLICATIONS FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 5 nA The NR8300FP-CC is an InGaAs avalanche photo diode module with single mode fiber. It is designed for optical test
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NR8300FP-CC
NR8300FP-CC
SM-9/125)
UL1581
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NX7528BF-AA
Abstract: NX7528BF-AA-AZ
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7528BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 60 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 80 mW at IFP = 400 mA Pulse Conditions: Pulse width (PW) = 10ms, Duty = 1% NEC's NX7528BF-AA is a 1550 nm Multiple Quantum Well
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NX7528BF-AA
NX7528BF-AA
NX7528BF-AA-AZ
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NX7329BB-AA-AZ
Abstract: NX7329BB-AA
Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7329BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 25 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 50 mW at IFP = 400 mA, Pulse Condition: Pulse Width (PW) = 10 µs, Duty = 1% NEC's NX7329BB-AA is a 1310 nm Multiple Quantum Well
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NX7329BB-AA
NX7329BB-AA
NX7329BB-AA-AZ
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NX7327BF-AA
Abstract: NX7327BF-AA-AZ
Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 110 mW MIN NX7327BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 180 mW at IFP = 1000 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7327BF-AA is a 1310 nm Multiple Quantum Well
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NX7327BF-AA
NX7327BF-AA
NX7327BF-AA-AZ
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NX7529BB-AA
Abstract: NX7529BB-AA-AZ
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7529BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 20 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 40 mW at IFP = 400 mA, NEC's NX7529BB-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate
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NX7529BB-AA
NX7529BB-AA
NX7529BB-AA-AZ
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NX7527BF-AA
Abstract: NX7527BF-AA-AZ
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 120 mW MIN NX7527BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW at IFP = 1000 mA, NEC's NX7527BF-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate
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NX7527BF-AA
NX7527BF-AA
NX7527BF-AA-AZ
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NX7328BF-AA
Abstract: NX7328BF-AA-AZ
Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well
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NX7328BF-AA
NX7328BF-AA
NX7328BF-AA-AZ
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NX7361JB-BC
Abstract: NX7361JB-BC-AZ
Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 150 mW MIN NX7361JB-BC FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode
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NX7361JB-BC
NX7361JB-BC
NX7361JB-BC-AZ
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB710-RT1 n COLLECTOR Motorola Preferred Device D nr 2 1 BASE EMITTER M CASE 3180-04, STYLE 1 SC-59 MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage
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MSB710-RT1
SC-59
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rb marking code
Abstract: lta 601 RB marking
Text: MSD601-RT1* MSD601-ST1 CASE 3180-03, STYLE 1 MAXIMUM RATINGS T A = 25 C Rating CO LLEC TO R Symbol Value Unit V dc C o lle c to r-B a s e V oltage v (B R )C B 0 30 C o lle c to r-E m itte r V olta g e v (B R )C E O 25 V dc E m itte r-B a s e V o lta g e
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MSD601-RT1*
MSD601-ST1
SC-59
601-R
MSD601-RT1
rb marking code
lta 601
RB marking
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H11K1
Abstract: H11K
Text: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors
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H11K1,
H11K2
INFRAR000,
H11K1
H11K
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HLIK-1
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP 57E D 74bbfl51 000ME1E H ä TY O ptoisolator Specifications _ H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H11K series consists o f a gallium -alum inum -arsenide, in frared
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74bbfl51
000ME1E
H11K1,
H11K2
H11K1
H11K2
D0D421S
HLIK-1
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152w
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Sw itching Diodes M1MA151WAT1 M l MA152WAT1 M otorola P referred Device« These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the
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SC-59
M1MA151/2WAT1
inch/3000
M1MA151/2WAT3
inch/10
M1MA151WAT1
MA152WAT1
52WAT1
152w
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ana 650
Abstract: ic ana 650 UZ814 UZ815 JDO-214AC
Text: Zener Regulator Diodes Part Number ! Microsemi Division Package : Outline Type A DO-214AC SMBG A A DO-41 A A A DO-41 A DO-214AC SMBG A A DO-41 A DO-214AC SMBG DO-41 A A DO-41 A DO-214AC SMBG DO-41 A A DO-41 A DO-214AC SMBG A A DO-41 A DO-214AC SMBG A A DO-41
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DO-214AC
DO-41
ana 650
ic ana 650
UZ814
UZ815
JDO-214AC
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H11K1
Abstract: H11K2 tic 2250 cy269
Text: Optolsolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, in frared em itting d io d e co u p led with two h ig h voltage silicon D arlingtonco n n ected p h o to tran sisto rs w hich have integral base-em itter resistors
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H11K1,
H11K2
H11K2
H11K1
tic 2250
cy269
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H11A1-H11A2
Abstract: No abstract text available
Text: Optolsolator Specifications H11A1, H11A2, H11A3, H11A4, H11A5 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1A1 th ro u g h H I 1A5 consist o f a gallium arse n id e in frared em itting d io d e co u p led with a silicon p h o to tra n sisto r in a dual in-line
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H11A1,
H11A2,
H11A3,
H11A4,
H11A5
H11A1-H11A2
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3040pt
Abstract: No abstract text available
Text: PBYR3035PT PBYR3040PT PBYR3045PT SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in switched-mode
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PBYR3035PT
PBYR3040PT
PBYR3045PT
3040pt
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m3181
Abstract: 3045Pt 3040PT PBYR3035PT PBYR3040PT 076-AA PBYR3045PT R2M* Avalanche Diode
Text: PBYR3035PT PBYR3040PT PBYR3045PT PHILIPS INTERNATIONAL 5bE D 711005b DDmTTH 7bG • P H I N 't-û 3 -tr SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in switched-mode
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PBYR3035PT
PBYR3040PT
PBYR3045PT
7110fl5b
711002b
M318Z
M3183
m3181
3045Pt
3040PT
PBYR3035PT
PBYR3040PT
076-AA
PBYR3045PT
R2M* Avalanche Diode
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