Untitled
Abstract: No abstract text available
Text: 3108 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1 @Temp. (øC) (Test Condition)25
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Voltage800
Current75u
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C20 diode, TO
Abstract: 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820
Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance pF 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts)
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ZC820
50MHz
ZC821
ZC822
ZC823
ZC824
ZC825
ZC826
C20 diode, TO
822 diode
c20 diode
3108 DIODE
ZC821
ZC823
Silicon Tuner
ZC825
ZC826
ZC820
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Untitled
Abstract: No abstract text available
Text: LTC3108 Ultralow Voltage Step-Up Converter and Power Manager Features Description Operates from Inputs of 20mV n Complete Energy Harvesting Power Management System - Selectable VOUT of 2.35V, 3.3V, 4.1V or 5V - LDO: 2.2V at 3mA - Logic Controlled Output - Reserve Energy Output
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LTC3108
12-Lead
16-Lead
LTC3108
LTC6656
850mA
LT8410/
LT8410-1
25mA/8mA
40VMAX;
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honeywell cq200
Abstract: No abstract text available
Text: LTC3108 Ultralow Voltage Step-Up Converter and Power Manager FEATURES n n n n n n DESCRIPTION Operates from Inputs of 20mV Complete Energy Harvesting Power Management System - Selectable VOUT of 2.35V, 3.3V, 4.1V or 5V - LDO: 2.2V at 3mA - Logic Controlled Output
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LTC3108
12-Lead
16-Lead
LTC3642
60VMAX;
LT8410/
LT8410-1
25mA/8mA
40VMAX;
3108f
honeywell cq200
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Untitled
Abstract: No abstract text available
Text: LTC3108 Ultralow Voltage Step-Up Converter and Power Manager FEATURES n n n n n DESCRIPTION Operates from Inputs of 20mV Complete Energy Harvesting Power Management System - Selectable VOUT of 2.35V, 3.3V, 4.1V or 5V - LDO: 2.2V at 3mA - Logic Controlled Output
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LTC3108
12-Lead
16-Lead
LTC3108
60VMAX;
LTC6656
850mA
LT8410/
LT8410-1
25mA/8mA
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honeywell cq200
Abstract: Solar Charge Controller single cell NiMH ic peltier generator LTC4O70 thermoelectric generator by using peltier element 100mA 1000 lux solar cell solar charger schematic nimh TE-127-1 CQ200 Q313
Text: LTC3108 Ultralow Voltage Step-Up Converter and Power Manager FEATURES DESCRIPTION n The LTC 3108 is a highly integrated DC/DC converter ideal for harvesting and managing surplus energy from extremely low input voltage sources such as TEGs thermoelectric
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LTC3108
LTC3108-1
DFN-10
MSOP-10E
60VMAX;
40VMAX;
3108fb
honeywell cq200
Solar Charge Controller single cell NiMH ic
peltier generator
LTC4O70
thermoelectric generator by using peltier element
100mA 1000 lux solar cell
solar charger schematic nimh
TE-127-1
CQ200
Q313
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honeywell cq200
Abstract: peltier element schematic peltier cooler schematic q313 honeywell thermopile generator peltier generator CQ200 thermopile circuits solar charge controller thermoelectric generator tellurex
Text: LTC3108 Ultralow Voltage Step-Up Converter and Power Manager Features Description Operates from Inputs of 20mV n Complete Energy Harvesting Power Management System - Selectable VOUT of 2.35V, 3.3V, 4.1V or 5V - LDO: 2.2V at 3mA - Logic Controlled Output - Reserve Energy Output
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LTC3108
12-Lead
16-Lead
LTC3108
60VMAX;
LTC6656
850mA
LT8410/
LT8410-1
25mA/8mA
honeywell cq200
peltier element schematic
peltier cooler schematic
q313 honeywell thermopile generator
peltier generator
CQ200
thermopile circuits
solar charge controller
thermoelectric generator
tellurex
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peltier melcor
Abstract: Melcor peltier honeywell cq200 peltier cooler schematic MELCOR tec Solar Charge Controller single cell NiMH ic thermopile circuits thermoelectric generator by using peltier element gz115 q313 honeywell thermopile generator
Text: Electrical Specifications Subject to Change LTC3108 Ultralow Voltage Step-Up Converter and Power Manager FEATURES n n n n n n DESCRIPTION Operates from Inputs of 20mV Complete Energy Harvesting Power Management System - Selectable VOUT of 2.35V, 3.3V, 4.1V or 5V
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LTC3108
DFN-10
MSOP-10E
60VMAX;
40VMAX;
3108p
peltier melcor
Melcor peltier
honeywell cq200
peltier cooler schematic
MELCOR tec
Solar Charge Controller single cell NiMH ic
thermopile circuits
thermoelectric generator by using peltier element
gz115
q313 honeywell thermopile generator
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D 1062
Abstract: D 1062 transistor T1929N T380N T869N 3108 DIODE
Text: W1C - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 3600 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor
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T380N
T869N
T1929N
D 1062
D 1062 transistor
T1929N
T380N
T869N
3108 DIODE
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T1059N
Abstract: T1589N T2159N T308N T458N T709N 16-04 thyristor
Text: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T
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T308N
T458N
T709N
T1059N
T1589N
T2159N
T1059N
T1589N
T2159N
T308N
T458N
T709N
16-04 thyristor
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D 1062 transistor
Abstract: 3108 T1929N T380N T869N
Text: W1C - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 3600 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor
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T380N
T869N
T1929N
D 1062 transistor
3108
T1929N
T380N
T869N
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5082-2830
Abstract: MTTF Activation Energy
Text: Tri Metal Beam Lead Schottky Diodes Non-Hermetic Packaged Reliability Data The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the
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MIL-STD-750.
10-10/hr)
MIL-STD-750
C/125
DOD-HDBK-1686
5082-2830
MTTF
Activation Energy
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T1059N
Abstract: T1589N T2159N T308N T458N T709N
Text: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T
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T308N
T458N
T709N
T1059N
T1589N
T2159N
23suant
T1059N
T1589N
T2159N
T308N
T458N
T709N
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kb 778
Abstract: T1929N T380N T869N
Text: W1C - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 3600 V ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor
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T380N
T869N
T1929N
kb 778
T1929N
T380N
T869N
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3106F
Abstract: 3106F 28 21P 3102F 3102UF 3104F 3104UF 3106UF 3108F 3108UF 3110UF
Text: b3E » • 1 5 1 4 6 5 4 DD D G S D ? 73b H V M I THREE PHASE BRIDGE FULL WAVE 70nS*150nS*3000nS RECOVERY 3102 3104 3106 3108 3110 3102UF 3104UF 3106UF 3108UF 3110UF 3102F 3104F 3106F 3108F 311 OF VO L T A G E M U L T I P L I E R S INC * VRWM = 2 0 0 -1000V
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150nS
3000nS
3102F
3102UF
3104F
3104UF
3106F
3106UF
3108F
3108UF
3106F 28 21P
3102UF
3104UF
3106UF
3108UF
3110UF
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iskra diode
Abstract: Iskra zener diode b2x Diode B2x 79C4V7 iskra diodes SK615 Iskra Semic DIODE ISKRA Iskra bzx
Text: 4 0 6 3 47 7 0 0 0 1 1 8 2 T • ISK 37E D ISKRA SE MI C CAPS IND Iskra Limited COMPONENTS GROUP R E D L A N D S , C O U L SD O N , S U R R E Y C R 3 2 H T U N IT E D K IN G D O M Tel: 01-668 7141 Telex: 946880 Fax No: 01-668 3108 As, DIODE NETWORK 1. -H3-2H
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79C4V7
SK615
Encap68
iskra diode
Iskra
zener diode b2x
Diode B2x
iskra diodes
Iskra Semic
DIODE ISKRA
Iskra bzx
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iskra diode
Abstract: MARKING 3H7 BDP4148 diode 4148 Iskra Diode IN 4148 DIODE ISKRA 3108 DIODE 4148 4148 diode
Text: ISKRA SEP1IC CAPS IND 37E D H&&3H7? QDGllôl Ô H I S K Iskra Limited COMPONENTS GRO U P R E D L A N D S , C O U L S D O N , S U R R E Y C R 3 2 H T U N IT E D K I N G D O M Tel: 01-668 7141 Telex: 9 4 6 8 8 0 Fax No: 01-668 3108 SERIES BDP DIO DE NETWORK
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200mA
SK615
iskra diode
MARKING 3H7
BDP4148
diode 4148
Iskra
Diode IN 4148
DIODE ISKRA
3108 DIODE
4148
4148 diode
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ASEA abb diode
Abstract: MOQ31 D1 diode 3108 DIODE ABB D1 MQQ31 E72873 5116D1
Text: A S E A BROUN/ABB SEMICON Schnelle Dioden-Module 03 D I □ 04 A3 dû O D D O n ? t Fast switching diode modules Daten pro D iode/data per diod e/les caractéristiques se rapportent à 1 diode V rrm Ifr m s V drm If a v m IfS M ft Tc- T v j m (10 ms) 100°C
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Tvj-45Â
O-240
MQQ31
MQQ51
MOQ31
MOQ51
ASEA abb diode
D1 diode
3108 DIODE
ABB D1
E72873
5116D1
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON Schnelle Dioden-Module A3 D~ | □Q4fi3Dö D D O O n ? b 3 T - 2 - 1 - oi Fast switching diode modules Daten pro D iode/data per diod e/les caractéristiques se rapportent à 1 diode V rrm Ifr m s V drm If a v m IfS M ft Tc- T v j m
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ZC823
Abstract: ZC821 diode 816
Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M1 i» ii 1 CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Reverse Voltage MAX U N IT Vr 25 V Forw ard Current If 200 mA Power Dissipation at T amb=25°C
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ZC820
ZC821
ZC822
ZC823
ZC824
ZC825
ZC826
diode 816
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Untitled
Abstract: No abstract text available
Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M 1 k CATHODE ANODE ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM B O L R everse Voltage M AX UNIT Vr 25 V Forward Current 'F 200 mA Pow er Dissipation at T amb=25°C
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ZC820
001G35S
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862N51/OPB862N55 MCKAOÉ DItlENtlONS The O P B 862N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN
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OPB862N51/OPB862N55
OPB862N51
OPB862N55
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs M BRF20200CT M o to ro la P referre d D evice The SW ITCHM O DE Power R ectifier em ploys the Schottky Barrier principle in a large area m e ta l-to -siilco n power diode. S ta te -o f-th e -a rt geom etry features
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AN1040.
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PJ 969 diode
Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
Text: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation
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t30SE71
HGTG20N50C1D
O-247
500ns
AN7254
AN7260)
M302E71
QD50S67
PJ 969 diode
DIODE 25PH 500
pj 809
HGTG20N50C1D
08/bup 3110 transistor
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