JESD97
Abstract: S8C5H30L STS8C5H30L
Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced
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STS8C5H30L
STS8C5H30L
JESD97
S8C5H30L
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Untitled
Abstract: No abstract text available
Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced
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STS8C5H30L
STS8C5H30L
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JESD97
Abstract: S8C5H30L STS8C5H30L
Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET Features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced ■ Switching losses reduced
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STS8C5H30L
STS8C5H30L
JESD97
S8C5H30L
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F1S60P03
Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
Text: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using
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RFG60
RFP60P
RF1S60
P03SM)
RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
80e-2
F1S60P03
f1s60
RF1S60P03
RF1S60P03SM
RFG60P03
RFP60P03
TB334
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ZXM63C03
Abstract: ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC 1p63
Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135⍀; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique
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ZXMD63C03X
ZXM63C03
ZXMD63C03X
ZXMD63C03XTA
ZXMD63C03XTC
1p63
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MO-187
Abstract: ZXM63C03 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC DSA003665
Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135⍀; ID=2.3A P-CHANNEL: V(BR)DSS DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique
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ZXMD63C03X
D-81673
MO-187
ZXM63C03
ZXMD63C03X
ZXMD63C03XTA
ZXMD63C03XTC
DSA003665
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CTLDM30
Abstract: No abstract text available
Text: Product Brief CTLDM303N-M832DS 30V, 3.6A N-Channel CTLDM304P-M832DS (30V, 4.2A P-Channel) Dual, MOSFETs in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode
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CTLDM303N-M832DS
CTLDM304P-M832DS
TLM832DS
TLM832DS
CTLDM303N-M832DS
CTLDM304P-M832DS
21x9x9
27x9x17
CTLDM30
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FDS8858CZ
Abstract: fds8858
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858CZ
fds8858
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FDS8858CZ
Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858CZ
fds8858
DUAL N-CHANNEL POWERTRENCH MOSFET
q2180
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FDS8858
Abstract: No abstract text available
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
Abstract: No abstract text available
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858CZ
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
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ZXM63C03
Abstract: TS16949 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC
Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD63C03X
D-81541
ZXM63C03
TS16949
ZXMD63C03X
ZXMD63C03XTA
ZXMD63C03XTC
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zxm63c03
Abstract: ZXMD63C03XTC ZXMD63C03X ZXMD63C03XTA P-CHANNEL 30V DS MOSFET
Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD63C03X
zxm63c03
ZXMD63C03XTC
ZXMD63C03X
ZXMD63C03XTA
P-CHANNEL 30V DS MOSFET
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Untitled
Abstract: No abstract text available
Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD63C03X
D-81541
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Transistor Mosfet N-Ch 30V
Abstract: STS7C4F30L
Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω
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STS7C4F30L
STS7C4F30L
Transistor Mosfet N-Ch 30V
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STS7C4F30L
Abstract: Transistor Mosfet N-Ch 30V
Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω
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STS7C4F30L
STS7C4F30L
Transistor Mosfet N-Ch 30V
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STS7C4F30L
Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω
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STS7C4F30L
STS7C4F30L
P Channel STripFET
Transistor Mosfet N-Ch 30V
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27BSC
Abstract: MS-012AA ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC
Text: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that
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ZXMC3A17DN8
27BSC
MS-012AA
ZXMC3A17DN8
ZXMC3A17DN8TA
ZXMC3A17DN8TC
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Untitled
Abstract: No abstract text available
Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure
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ZXMC3A16DN8
ZXMC3A16DNlephone:
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ZXMC3A16DN8
Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16
Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure
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ZXMC3A16DN8
ZXMC3A16DN8TA
ZXMC3A16DN8
ZXMC3A16DN8TA
ZXMC3A16DN8TC
zxmc 3a16
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZXMC3AMCTA ZXMC3AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A
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ZXMC3AM832
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Untitled
Abstract: No abstract text available
Text: ZXMC3A18DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that
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ZXMC3A18DN8
ZXMC3A18DN8TA
ZXMC3A18DN8TC
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Transistor Mosfet N-Ch 30V
Abstract: STS8C5H30L S8C5H30L P-CHANNEL
Text: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω
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STS8C5H30L
Transistor Mosfet N-Ch 30V
STS8C5H30L
S8C5H30L
P-CHANNEL
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Untitled
Abstract: No abstract text available
Text: RF1K49224 33 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 com plem entary power MOSFET is
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RF1K49224
RF1K49224
1-800-4-HARRIS
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