mosfet p-channel 2A
Abstract: 24V 1A mosfet
Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V
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LT2347
LT2347
-30V/-2
-30V/-2A,
-30V/-1A,
mosfet p-channel 2A
24V 1A mosfet
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Untitled
Abstract: No abstract text available
Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V
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LT2347
LT2347
-30V/-2
-30V/-2A,
-30V/-1A,
300us,
OT-23
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Untitled
Abstract: No abstract text available
Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V
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LT2347
LT2347
-30V/-2
-30V/-2A,
-30V/-1A,
OT-23
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AP2623Y
Abstract: No abstract text available
Text: AP2623Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques
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AP2623Y
OT-26
OT-26
180/W
AP2623Y
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Untitled
Abstract: No abstract text available
Text: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low On-resistance Surface Mount Package BVDSS ID G2 G1 170m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques
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AP2623GY
OT-26
OT-26
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AP2625GY
Abstract: No abstract text available
Text: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low Gate Drive ▼ Surface Mount Package -30V RDS ON 185mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques
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AP2625GY
OT-26
OT-26
100ms
180/W
AP2625GY
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AP2623GY
Abstract: No abstract text available
Text: AP2623GY Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques
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AP2623GY
OT-26
OT-26
180/W
AP2623GY
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Untitled
Abstract: No abstract text available
Text: FW356 FW356 Ordering number : ENN7743 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • For motor drives, inverters. The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
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FW356
ENN7743
FW356
FW356/D
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IXDN502SIA
Abstract: ixdn502pi IXDI502 IXDN502 IXDF502D1 IXDF502SIA IXDF502 IXDF502PI IXDI502PI IXDI502SIA
Text: IXDF502 / IXDI502 / IXDN502 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High 2A Peak Output Current
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IXDF502
IXDI502
IXDN502
1000pF
IXDF502,
IXDN502
IXDN502SIA
ixdn502pi
IXDF502D1
IXDF502SIA
IXDF502PI
IXDI502PI
IXDI502SIA
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Untitled
Abstract: No abstract text available
Text: MA3304V10000000 N-Ch and P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3304V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3304V10000000
MA3304V
D032610
3000pcs
15000pcs
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KMB2D0N60SA
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.
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KMB2D0N60SA
Fig10.
Fig11.
Fig12.
KMB2D0N60SA
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TMC32NP
Abstract: T207 DIODE set of transistors TMC239A TMC239 TMC249 TMC249A TMC249A-LA 10V STEPPER MOTOR HC 148 TRANSISTOR
Text: TMC32NP-MLP Manual Complementary 30V Enhancement Mode MOSFET In Miniature Package For use with e.g. TMC239 or TMC249 Version: 1.01 11 April 2007 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMC32NP-MLP Manual V1.01 /11 April 2007
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TMC32NP-MLP
TMC239
TMC249
TMC32NP-MLP
16-Mar-2007
11-Apr-2007
TMC239]
TMC249]
TMC32NP
T207 DIODE
set of transistors
TMC239A
TMC249
TMC249A
TMC249A-LA
10V STEPPER MOTOR
HC 148 TRANSISTOR
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KMB2D0N60SA
Abstract: smps 1mhz 60v
Text: SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.
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KMB2D0N60SA
KMB2D0N60SA
smps 1mhz 60v
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stp6
Abstract: No abstract text available
Text: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID 60V < 0.25Ω 2A ) s ( t c u d o ) r s Description ( P t c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c Applications
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STT2PF60L
OT-23-6L
OT23-6L
stp6
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Untitled
Abstract: No abstract text available
Text: Depletion Mode MOSFETs VDSX ID on IXTT2N170D2 IXTH2N170D2 RDS(on) = > ≤ 1700V 2A 6.5Ω Ω N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700
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IXTT2N170D2
IXTH2N170D2
O-268
O-247
O-247)
100ms
2N170D2
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Untitled
Abstract: No abstract text available
Text: SID02N65SL 2A , 650V , RDS ON 4.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID02N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SID02N65SL
O-251
SID02N65SL
19-Dec
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Untitled
Abstract: No abstract text available
Text: SSP2N80A A d v a n c e d Power MOSFET FEATURES B V dss " 800 V • Avalanche Rugged Technology ■ ^DS on = 6.0 Q Rugged Gate Oxide Technology < Improved Gate Charge CM II Lower Input Capacitance ■ _Q ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 800V
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SSP2N80A
003b32fl
O-220
7Tb4142
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GS 069 pwm
Abstract: No abstract text available
Text: Shindengen @ A m erica, Inc. 2.5V to 12V Output MD1322F DESCRIPTION Company Name The MD1322F is a high-efficiency step down DC-DC converter TAB2 28 Type No. power integrated circuit with main MOSFET switch and Schottky Barrier Diode. The MD1322F can deliver 20 watts maximum
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MD1322F
MD1322F
5030N
28-pin
GS 069 pwm
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Untitled
Abstract: No abstract text available
Text: Advanced SSP2N90A Power MOSFET FEATURES BVDSS - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V
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SSP2N90A
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Untitled
Abstract: No abstract text available
Text: SSP2N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 5.0 £2 ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V
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SSP2N60A
00403M5
003b32fl
O-220
00M1N
7Tb4142
DD3b33D
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Untitled
Abstract: No abstract text available
Text: SSP2N90A Advanced Power MOSFET FEATURES - 900 V ^DS on = 7 .0 C i B V DSs • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V I Low RDs(on) • 5-838 Cl (Typ.) CM Extended Safe Operating Area
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SSP2N90A
003b32fl
O-220
7Tb4142
DD3b33D
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Untitled
Abstract: No abstract text available
Text: Advanced SSS2N90A Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge - ^DS on = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V
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SSS2N90A
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Untitled
Abstract: No abstract text available
Text: SSP2N80A A d v a n c e d Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 800 V ^ D S o n = 6 . 0 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V
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SSP2N80A
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Untitled
Abstract: No abstract text available
Text: SSS2N90A Advanced Power MOSFET FEATURES BVDgs - 900 V • Avalanche Rugged Technology 7.0 Q ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 1-5 A ■ Improved Gate Charge ■ Extended Safe Operating Area T 0 -2 2 0 F ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V
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SSS2N90A
0Q4Q525
004052b
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