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Catalog Datasheet	MFG & Type	Document Tags	PDF
2SJ214 Abstract: 2SJ172 0S0250 Text: HITACHI 2SJ214 L ,2SJ214(S) SILICON P-CHANNEL MOS FET 10 2 I 0.3 r 4.44±0.2 HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4-V Gate Drive Device —Can be driven from 5 V 30urce • Suitable for Motor Drive, DC-DC Convertor, Power	OCR Scan	2SJ214 7fl-25 FOS--10VÂ 2SJ172 0S0250	PDF
Untitled Abstract: No abstract text available Text: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi	OCR Scan	IRFY430CM 500Volt, S5452	PDF

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2SJ214

Abstract: 2SJ172 0S0250
Text: HITACHI 2SJ214 L ,2SJ214(S) SILICON P-CHANNEL MOS FET 10 2 I 0.3 r 4.44±0.2 HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4-V Gate Drive Device —Can be driven from 5 V 30urce • Suitable for Motor Drive, DC-DC Convertor, Power

OCR Scan

2SJ214 7fl-25 FOS--10VÂ 2SJ172 0S0250

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Untitled

Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi

OCR Scan

IRFY430CM 500Volt, S5452

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