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Littelfuse Inc IXFH30N50Q3 MOSFET N-CH 500V 30A TO247AD
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DigiKey	IXFH30N50Q3	Tube	122		1	1 $13 10 $13 100 $8.35933 1000 $13 10000 $13	Buy Now
RS	IXFH30N50Q3	Bulk		8 Weeks	30	1 - 10 - 100 $11.9 1000 $11.9 10000 $11.9	Get Quote
Littelfuse Inc IXFT30N50Q3 MOSFET N-CH 500V 30A TO268
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DigiKey	IXFT30N50Q3	Tube	30		300	1 - 10 - 100 - 1000 $8.68537 10000 $8.68537	Buy Now
Newark	IXFT30N50Q3	Bulk			300	1 - 10 - 100 - 1000 $9.11 10000 $9.11	Buy Now
RS	IXFT30N50Q3	Bulk		8 Weeks	30	1 - 10 - 100 $13.43 1000 $13.43 10000 $13.43	Get Quote
IXYS Corporation IXFT30N50Q MOSFET N-CH 500V 30A TO268
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DigiKey	IXFT30N50Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFK30N50Q MOSFET N-CH 500V 30A TO264AA
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DigiKey	IXFK30N50Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFR30N50Q MOSFET N-CH 500V 30A ISOPLUS247
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DigiKey	IXFR30N50Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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30N50Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFR32N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	PDF	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50
IXFR32N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	PDF	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50
fast IXFX Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
30N50 Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50 Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	PDF	ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50
Untitled Abstract: No abstract text available Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,	Original	PDF	30N50Q 32N50Q 32N50 125OC
32N50 Abstract: 125OC 32N50Q Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	30N50Q 32N50Q 247TM O-264 125OC 728B1 32N50 125OC 32N50Q
32N50Q Abstract: 30N50Q 125OC 30n50 Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient	Original	PDF	30N50Q 32N50Q 125OC 32N50Q 30N50Q 125OC 30n50
IXFR32N50 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	PDF	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 IXFR32N50
32N50Q Abstract: BTAA Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C IDM TC = 25°C,	Original	PDF	30N50Q 32N50Q 247TM 32N50Q BTAA
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
30N50 Abstract: 32N50 32N50Q ISOPLUS247 IXFR30N50 lt 715 IXFR32N50 Text: □ IXYS Advanced Technical Information Vv DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface p ^D25 29 A 500 V 30 A 500 V t rr £ 250 ns DS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low t , HDMOS™ Family	OCR Scan	PDF	ISOPLUS247â 30N50Q 32N50Q 30N50 32N50 32N50 ISOPLUS247 IXFR30N50 lt 715 IXFR32N50