30J45 Search Results

30J45 Price and Stock

Filter by Manufacturer


Eaton Bussmann EFACA30J455E072LH CAP FILM 4.5UF 5% 300VAC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EFACA30J455E072LH	Bulk			378	1 - 10 - 100 - 1000 $5.39394 10000 $5.39394	Buy Now
ASI-EZ NDB330J45-1QHY110R Panel Mount Circuit Breaker, Roc
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDB330J45-1QHY110R				1	1 $15.6 10 $15.6 100 $15.6 1000 $15.6 10000 $15.6	Buy Now
Eaton Corporation EFACA30J455E072LH Film Capacitors CAP Film 4.5uF 5% 300VAC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	EFACA30J455E072LH					1 - 10 - 100 - 1000 $5.14 10000 $4.76	Get Quote
ABB Low Voltage Products and Systems 5SGA 30J4502 Thyristor: hockey-puck; 4.5kV; Ifmax: 1.46kA; 930A; Igt: 3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	5SGA 30J4502				1	1 $2958.63 10 $2493.7 100 $2493.7 1000 $2493.7 10000 $2493.7	Get Quote
ABB Low Voltage Products and Systems 5SGF 30J4502 Thyristor: hockey-puck; 4.5kV; Ifmax: 1.51kA; 960A; Igt: 2.5A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	5SGF 30J4502				1	1 $2356.34 10 $1912.54 100 $1912.54 1000 $1912.54 10000 $1912.54	Get Quote

Find more 30J45 price and stock on Findchips.com

30J45 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GTO ABB 5SGA 2046 Abstract: IG 2200 19 Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	30J4505 5SYA1204-04 CH-5600 GTO ABB 5SGA 2046 IG 2200 19
vt 1202 Abstract: ABB thyristor 5 IP350K gto 5sga Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 2.20 0.60 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	30J4502 CH-5600 vt 1202 ABB thyristor 5 IP350K gto 5sga
30J4502 Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static	Original	PDF	30J4502 30J4502 CH-5600 capacitor abb 5sgf30j4502 GTO thyristor ABB
Untitled Abstract: No abstract text available Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 25 VT0 = 1.90 rT = 0.53 VDClink = 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	PDF	30J4505 CH-5600
GTO thyristor ABB Abstract: ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.80 0.70 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	30J4502 30J4502 CH-5600 GTO thyristor ABB ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502
gto Gate Drive Abstract: gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 30 1.17 0.31 2800 V A kA V Gate turn-off Thyristor 5SGT 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1215-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	30J4502 30J4502 CH-5600 gto Gate Drive gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB
30j45 Abstract: 5STH 30J4501 Text: VDRM VRRM IPULSE VDcmax = = = = 4.5 18 110 2.8 kV V kA kV High Current High di/dt Switch for Pulsed Power Applications 5STH 30J4501 • • • • • • • • Features Asymmetric Design For Single or Repetitve Pulse Applications Very High di/dt Capability	Original	PDF	30J4501 CH-5600 30j45 5STH 30J4501
1419 Abstract: capacitor abb Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	30J4502 5SYA1202-03 CH-5600 1419 capacitor abb
5STH30J4501 Abstract: 5STH 30J4501 tvjm Text: VDRM VRRM IPULSE VDcmax = = = = 4.5 18 110 2.8 kV V kA kV High Current High di/dt Switch for Pulsed Power Applications 5STH 30J4501 Doc. No. 5SYA 08PP-01 Oct. 01 • • • • • • • • Features Asymmetric Design For Single or Repetitve Pulse Applications	Original	PDF	30J4501 08PP-01 CH-5600 5STH30J4501 5STH 30J4501 tvjm
ABB 5SGA Abstract: ABB thyristor 5 GTO thyristor ABB Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 25 1.90 0.53 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	30J4505 CH-5600 ABB 5SGA ABB thyristor 5 GTO thyristor ABB
Untitled Abstract: No abstract text available Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 2.20 rT = 0.60 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	PDF	30J4502 CH-5600
Untitled Abstract: No abstract text available Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 30 VT0 = 1.17 rT = 0.31 VDClink = 2800 Gate turn-off Thyristor V A kA V mΩ V 5SGT 30J4502 PRELIMINARY Doc. No. 5SYA 1215-03 Mar. 97 Features The 5SGT 30J4502 is an 85 mm buffered layer, Transparent Emitter non-shorted anode	Original	PDF	30J4502 30J4502 0E-03 0E-02 0E-01 CH-5600
GTO thyristor Curve properties Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1 Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by	Original	PDF	30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
5SDF01R2501 Abstract: 5SGA 5SGA30J2501 RTK 031 Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes	OCR Scan	PDF	01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031

ABB 5SGA Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s	OCR Scan	PDF	15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502