Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    300 V 500 MA SOT223 Search Results

    300 V 500 MA SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N3004P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 25A 93Mohm To-3P Visit Renesas Electronics Corporation
    H5N3008P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 40A 69Mohm To-3P Visit Renesas Electronics Corporation
    H5N3003P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 40A 69Mohm To-3P Visit Renesas Electronics Corporation
    H5N3011P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 88A 48Mohm To-3P Visit Renesas Electronics Corporation
    RJK3008DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 300V 40A 93Mohm To-3P Visit Renesas Electronics Corporation

    300 V 500 MA SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MPSA92(KSP92) equivalent

    Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
    Text: Discrete Small Signal General Purpose Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration BCP68 20 30 5 1 85 375 1 500 0.5 1 100 FZT649 25 35 5 3 100 300


    Original     		OT-223 BCP68 FZT649 NZT6714 PZT3904 PZT2222A NZT6715 BCP54 KSC2785 KSC2784 MPSA92(KSP92) equivalent BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369 PDF

    bta41-600b application

    Abstract: TYN1212 zvs driver thyristor capacitive discharge ignition ACST4108 T830T-8FP Electronic ignitors for HID lamp circuits bta06 application notes BTW67-1000 BTA41-800B
    Text: V 500 600 600 700 700 (V) 800 800 800 800 800 800 800 800 800 dV/dt VCL @ 100 (di/dt)c IGT max (4) µA (1) @ Tj = 125 °C @ Tj = 125 °C (V) (mA) (A/ms) (V/µs) 850 10 0.5 500 850 10 2 500 850 25 5 1000 850 10 3.5 500 850 30 8 2000 850 10 5 300 850 35 12


    Original     		ACS108-6SN ACS110-7SN OT-223 ACST610-8R ACST610-8G ACST830-8G SO-20 ACS302-5S3 ACS102-6T1 ACST1210-8G bta41-600b application TYN1212 zvs driver thyristor capacitive discharge ignition ACST4108 T830T-8FP Electronic ignitors for HID lamp circuits bta06 application notes BTW67-1000 BTA41-800B PDF

    Triac ACST47S

    Abstract: ACS1085s 7s ACS1025T ACS110 acs4025s triac acs ACS102-5T Data Sheet Triac ACS108 Triac ACS108 acs 08 5s
    Text: ACS for actuators Part number IT RMS (A) IGT (mA) dV/dt (V/µs) (dI/dt)ON (A/µs) (dI/dt)C (A/ms) ACS102-5T 0.2 10 300 20 0.15 TO-92, SO-8 ACS108-5S 0.8 10 500 100 0.3 SOT-223, TO-92 ACS110-7S 1 10 500 50 0.5 DIP-8, SOT-223 ACS120-7S 2 10 500 50 1 ACS402-5S


    Original     		ACS102-5T ACS108-5S OT-223, ACS110-7S OT-223 ACS120-7S ACS402-5S DIP-20 ACS302-5T3 SO-20 Triac ACST47S ACS1085s 7s ACS1025T ACS110 acs4025s triac acs ACS102-5T Data Sheet Triac ACS108 Triac ACS108 acs 08 5s PDF

    Untitled

    Abstract: No abstract text available
    Text: PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS TA=25 C Symbol VCEO VCBO VEBO IC(DC) 400 500 6 300 Unit V V V mA Total Device Disspation TA=25˚C


    Original     		PZTA44 OT-223 100mA) 100ms 09-Jun-10 OT-223 PDF

    PZTA44

    Abstract: VCB 400V PT 10000
    Text: PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS TA=25 C Symbol VCEO VCBO VEBO IC(DC) 400 500 6 300 Unit V V V mA Total Device Disspation TA=25˚C


    Original     		PZTA44 OT-223 100mA) 100ms 02-Jun-05 OT-223 PZTA44 VCB 400V PT 10000 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZTA44 NPN Silicon Planar Epitaxial Transistor * "G" Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol VCEO VCBO VEBO IC(DC) 400 500 6 300 Unit V V V mA Total Device Disspation TA=25˚C


    Original     		PZTA44 OT-223 100mA) 100ms 02-Jun-05 OT-223 PDF

    PZT2907

    Abstract: No abstract text available
    Text: 1.5W SOT223 BIPOLAR TRANSISTORS HIGH POWER TRANSISTORS SOT223 PACKAGE The latest comprehensive data to fully support these parts is readily available. SOT223 6.5 0°-7° 1.6 3.0 7.0 max 3.5 B C E 2.3 0.7 15° 15° 0.65 0.32 max 4.6 4.6 2.0 min 6.3 2.3 1.5 min


    Original     		OT223 BCP54 BCP55 PZT2907 PDF

    PBHV9540Z

    Abstract: PBHV8140Z SC-73 640 smd transistor marking transistor SMD MARKING CODE MARKING CODE SMD IC
    Text: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9540Z OT223 SC-73) PBHV8140Z. AEC-Q101 PBHV9540Z PBHV8140Z SC-73 640 smd transistor marking transistor SMD MARKING CODE MARKING CODE SMD IC PDF

    Untitled

    Abstract: No abstract text available
    Text: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9540Z OT223 SC-73) PBHV8140Z. AEC-Q101 PBHV9540Z PDF

    V8540Z

    Abstract: PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC
    Text: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8540Z OT223 SC-73) PBHV9040Z. AEC-Q101 PBHV8540Z V8540Z PBHV9040Z SC-73 MARKING CODE SMD IC PDF

    PBHV8540Z

    Abstract: PBHV9040Z SC-73 MARKING CODE SMD IC MARKING SMD IC CODE
    Text: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8540Z OT223 SC-73) PBHV9040Z. AEC-Q101 PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC MARKING SMD IC CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use DZTA42 SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA42 ISSUE 23 –– NOVEMBER SEPTEMBER93 2007 ✪ ISSUE FEATURES * Suitable for video output stages in TV sets and switch mode power supplies * High breakdown voltage


    Original     		DZTA42 OT223 FZTA42 FZTA92 20MHz PDF

    PBHV9050Z NXP

    Abstract: V9050Z SC-73
    Text: PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat BISS transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9050Z OT223 SC-73) AEC-Q101 PBHV9050Z NXP V9050Z SC-73 PDF

    Untitled

    Abstract: No abstract text available
    Text: PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat BISS transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV9050Z OT223 SC-73) AEC-Q101 PDF

    BFG591 amplifier

    Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
    Text: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17


    OCR Scan     		BF689K BF763 BFT25 BF747 BF547 BFS17 BFS17A BFR53 BFQ17 BFG17A BFG591 amplifier BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide S0T343 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE sa t Max h -E Type V lc(cont) A Ptot W M in/M ax 160 140 2.0 2.0 FZT605 140 120 2.0 2.0 FZT604 120 100 2.0 2.0 v CBO v CEO V FZT600 fT Typ MHz Com plem ent - at Iq / V ce mA / Volts


    OCR Scan     		OT223 FZT605 FZT604 FZT600 2K/100K FZT705 FZT704 PDF

    FZT858

    Abstract: fzt957
    Text: SOT223 HIGH C U R R EN T HIGH PERFO RM AN CE T R A N S IS T O R S Pinout : 1-Base, 2&4-Collector, 3-Emitter r Type NPN FZT857 VCBO V v CEO V 'C(cont) A Pfot W hFE M in/M ax at Ic / V ce m A / Volts v CE(sat) Max at lc / Iß Volts mA fT Typ MHz Com plem ent


    OCR Scan     		OT223 FZT857 FZT855 FZT853 FZT851 FZT869 FZT849 FZT958 FZT957 FZT956 FZT858 PDF

    Untitled

    Abstract: No abstract text available
    Text: Section S: Bipolar Transistors _ High Voltage Transistors ! 0 0 to 5 0 0 V olts SOT223 P!\IP High Voltage {Vq-o up BOOVI to Transistors Pinout Details: 1-Base, 2+4-Collector, 3-E m itter V CBO V CEO hFE lc Type V CE sat


    OCR Scan     		OT223 FZT560 FZT958 FZT758 FZT558 BSP16 FZT957 FZT757 BFN39 FZTA92 PDF

    FZT600

    Abstract: FZT603
    Text: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE|sat Max VcBO V v CEO V ^C cont) A <o h :E Type 160 140 2.0 2.0 Min/M ax Typ MHz t,t Com plem ent 1000/10 150- - 150 FZT705 150 FZT704 at lc / VCE m A / Volts Volts at l c / Iß mA


    OCR Scan     		OT223 FZT600 1K/2K/100K FZT605 5K/2K/100K FZT604 FZT603 2K/100K 500/FZTA14 PDF

    zetex fzt788b

    Abstract: FZT788B
    Text: Section S: Bipolar Transistors L o u j S a tu ra tio n T ra n s is to rs up to I QOV SOT223 L o w S a t u r a t i o n PISJP T r a n s i s t o r s u p t o 1 0 0 V Pinout Details: 1-Base, 2+4 C ollector, 3-Em itter


    OCR Scan     		OT223 BCP53 FZT951 BSP33 FZT751 FZT591 FZT792A BSP31 BCP52 FZT790A zetex fzt788b FZT788B PDF

    F2T651

    Abstract: No abstract text available
    Text: Section S: Bipolar Transistors lo iij The Zetex Low Saturation Voltage Transistors offer excellent performance solutions in surface mounted packages SOT223, SOT89, SOT23, SOT323 and the compact through hole E-Line package. S a:urationTransistors up to I 0 0 V o lts


    OCR Scan     		OT223, OT323 OT223 F2T651 PDF

    PZTA45

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high voltage transistor FEATURES PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a 4-lead SOT223 surface mounting package, especially suitable for use


    OCR Scan     		PZTA44; PZTA45 OT223 PZTA44 PZTA45 350uration PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high voltage transistor FEATURES PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a 4-lead SOT223 surface mounting package, especially suitable for use


    OCR Scan     		PZTA44; PZTA45 OT223 OT223 PZTA44 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.


    OCR Scan     		OT223 BSP108 PDF