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    3.3KW 10MHZ TRANSISTOR MODULE Search Results

    3.3KW 10MHZ TRANSISTOR MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

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    zo 107

    Abstract: Fujikura coax 2V F100K ECL Users Handbook F100K ECL book alcoa fujikura multi BY300-600 TTL 7400 catalog CY7B923 FR4 substrate with dielectric constant 4.4 for mi op amp cookbook
    Text: HOTLinkt Design Considerations Application Note Overview The HOTLink t family of data communications products provides a simple and lowĆcost solution to highĆspeed data transmission. While these products are easy to use, the methods used to connect them


    Original     		EIA/TIA568, zo 107 Fujikura coax 2V F100K ECL Users Handbook F100K ECL book alcoa fujikura multi BY300-600 TTL 7400 catalog CY7B923 FR4 substrate with dielectric constant 4.4 for mi op amp cookbook PDF