3 X 3 MM AMPLIFIER Search Results

Contextual Info: RF3861 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features „ „ „ „ „ Low Noise and High Intercept Point Adjustable Bias for Enhanced IP3 Single 2.5 V to 6.0 V Power Supply 400 MHz to 3800 MHz Operation QFN16, 3 mm x 3 mm Package

RF7203

Contextual Info: RF7203 3 V W-CDMA BAND 3/4 LINEAR PA MODULE Package Style: Module, 10-Pin, 3 mm x 3 mm x 1.0 mm Features           HSPA+ Compliant Low Voltage Positive Bias Supply 3.0 V to 4.35 V +28 dBm Linear W-CDMA Rel 99 Output Power (+26.5 dBm

2SA1301 TOSHIBA

Contextual Info: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C

Contextual Info: TPS71319 TPS71334 Actual Size 3 mm x 3 mm www.ti.com SBVS055A – DECEMBER 2004 – REVISED JANUARY 2005 Dual 250 mA Output, UltraLow Noise, High PSRR, Low-Dropout Linear Regulator with Integrated SVS FEATURES • • • • • • • • • • •

Contextual Info: Typical Size 6,4 mm X 6,6 mm TPS54373 www.ti.com SLVS455B − JANUARY 2003 − REVISED FEBRUARY 2005 3ĆV TO 6ĆV INPUT, 3ĆA OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING STARTĆUP FEATURES D 60-mΩ MOSFET Switches for High Efficiency D D

Contextual Info: Typical Size 6,4 mm X 6,6 mm TPS54373 www.ti.com SLVS455B − JANUARY 2003 − REVISED FEBRUARY 2005 3-V TO 6-V INPUT, 3-A OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING START-UP FEATURES D 60-mΩ MOSFET Switches for High Efficiency D D D D

Contextual Info: Typical Size 6,3 mm x 6,4 mm TPS54310 www.ti.com SLVS412B − DECEMBER 2001 − REVISED APRIL 2005 3-V TO 6-V INPUT, 3-A OUTPUT SYNCHRONOUS-BUCK PWM SWITCHER WITH INTEGRATED FETs (SWIFT ) FEATURES D 60-mΩ MOSFET Switches for High Efficiency D D D D D

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

Contextual Info: ACPM-5013 3 x 3 mm Power Amplifier Module LTE Band13/14 777-798 MHz Data Sheet Description Features The ACPM-5013 is a fully matched 10-pin surface mount module developed for LTE Band 13 and Band 14, operating in the 777-798 MHz bandwidth. The ACPM-5013 meets

Contextual Info: TPS63700 Actual Size 3 mm x 3 mm www.ti.com SLVS530 – SEPTEMBER 2005 DC-DC INVERTER FEATURES • • • • • • • • • • DESCRIPTION Adjustable Output Voltage Down to –15 V 2.7-V to 5.5-V Input Voltage Range Up to 360-mA Output Current 1000-mA Typical Switch Current Limit

Contextual Info: RFPA5200 Preliminary 3.3V to 5.0V, 2.4GHz to 2.5GHz Integrated PA Module Package: Laminate, 4mm x 4 mm x 1 mm Features       POUT = 27dBm, 5V < 3% Dynamic EVM 33dB Typical Gain High PAE Integrated Input and Output 50Ω Match Integrated Power Detector

2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.

27 Mhz power amplifier

Contextual Info: TOSHIBA {DIS CR ETE/ OP TO} 909725 0 T OS HIB A Sb DE I TOITSSO □00745b =1 DISCRETE/OPTO -6 7 SILICON NPN E PIT A X IA L PLANAR TYPE Unit in mm 27 MHz POWER AMPLIFIER APPLICATIONS. 10.S MAX., 0 3 . 6 ÍQ . 3 FEATURES: • Reconnnended for Output Stage Application of

Contextual Info: SILICON NPN EPITAXIAL TYPE DARLINGTON POWER -2SD1509 INDUSTRIAL APPLICATIONS Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 8. 3 MA X , &8 FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A)

2Sc2073

Abstract: 2Sa940 2-10a1a
Contextual Info: 2 S C 2 0 7 3 SILICQNNPN triple pffusedtype pcj process Unit in mm PO W ER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS. • • Wide Safe Operating Area. Complementary to 2SA940 SlO< M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: 3 mm x 5 mm DAC8571 www.ti.com SLAS373A – DECEMBER 2002 – REVISED JULY 2003 2 16-BIT, LOW POWER, VOLTAGE OUTPUT, I C INTERFACE DIGITAL-TO-ANALOG CONVERTER FEATURES • • • • • • • • • • • • • DESCRIPTION Micropower Operation: 160 µA @ 5 V

LM4050-2.5

Abstract: lm4050-5.0 SSOT-23 rcb.e LM4050 MF03A
Contextual Info: LM4050 Precision Micropower Shunt Voltage Reference General Description Features Ideal for space critical applications, the LM4050 precision voltage reference is available in the sub-miniature 3 mm x 1.3 mm SSOT-23 surface-mount package. The LM4050’s design eliminates the need for an external stabilizing capacitor while ensuring stability with any capacitive load, thus

Contextual Info: Typical Size 6,4 mm X 9,7 mm www.ti.com TPS54610 SLVS398E – JUNE 2001 – REVISED FEBRUARY 2005 3-V TO 6-V INPUT, 6-A OUTPUT SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETs SWIFT FEATURES • • • • • • • DESCRIPTION 30-mΩ, 12-A Peak MOSFET Switches for High

Contextual Info: PT4140 Series 20-W 24-V Input Isolated DC/DC Converter SLTS120B Revised 3/1/2002 Features • Input Voltage Range: 18V to 40V • 20W Rated • 82% Efficiency • 1500 VDC Isolation • Low Profile (8.5 mm) • Small Footprint: 1.52in x 1.73in • Remote On/Off

S-AV30H

Abstract: sav30h
Contextual Info: TOSHIBA S-AV30H TO SHIBA RF POWER AMPLIFIER M O DU LE S -A V 3 0 H Unit in mm VHF B AN D FM POWER AMPLIFIER M O DU LE H AN D -H E LD TRANSCEIVER 30.0 + 0.5 M A X IM U M RATINGS Tc = 25°C SYMBOL CHARACTERISTIC DC Supply Voltage Vd d DC Supply Voltage vgg

2SB596

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)

E39-R15

Abstract: E3F2-7L-P1 E3F2-R2RB4-M1-M E3F2-DS30C4 E3F2-7DC4-P1 E3F2-7DB4-P1 e3f27ls E3F27LM1S E3F2-DS30C4-M1-M Reflective Optical Sensor
Contextual Info: M18 Cylindrical Photoelectric Sensors E3F2 Threaded Cylindrical Photoelectric Sensors with Built-in Amplifier and Axial or Right Angle optics • ■ ■ ■ ■ ■ ■ ■ ■ ■ Housing materials: plastic, nickel plated brass and stainless steel IP67 enclosure ratings

PCB Rogers RO4003

Abstract: ro4003 RO4003C Rogers RO4003 GRM1885C1H1R0CZ01D GRM1885C1H680JA01D
Contextual Info: BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 2 — 13 September 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior

Contextual Info: AWT6309 HELP2TM AWS/KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module Data Sheet - Rev 2.5 FEATURES • InGaP HBT Technology • High Efficiency: • 40 % @ +28 dBm output • 22 % @ +17 dBm output • Low Quiescent Current: 15 mA • Low Leakage Current in Shutdown Mode: <1 µA