3 A SMD TRANSISTOR Search Results

6 pin TRANSISTOR SMD CODE PA

Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Contextual Info: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol

Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY

Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS on 1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m MAX. (VGS = -10 V, ID = -3 A)

transistor smd MJ 145

Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Contextual Info: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter

Contextual Info: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS4160QA 60 V, 1 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS5160QA 60 V, 1 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS4130QA 30 V, 1 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic

Contextual Info: DF N2 020 D-3 PBSS4330PAS 30 V, 3 A NPN low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic

Contextual Info: SO T2 3 PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV37EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2n06l05

Abstract: 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.5 mΩ ID 80 A • Logic Level • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1

3pn0403

Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
Contextual Info: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

4p03L11

Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
Contextual Info: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

4P04L03

Abstract: IPP120P04P4L-03 IPB120P04P4L-03
Contextual Info: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3 mΩ • Logic Level ID 100 • 175°C operating temperature P- TO263 -3-2 A P- TO220 -3-1 • Avalanche rated

SMD-2520

Abstract: 3N10L smd diode 104
Contextual Info: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated

4P03L07

Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
Contextual Info: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1