2x40w
Abstract: mosfet characteristcs free down load 5v 3W AUDIO AMPLIFIER CIRCUIT Gv2 overload TDA7575PD low noise audio amplifier 2x75W 2x28W
Text: TDA7575PD MULTIFUNCTION DUAL BRIDGE POWER AMPLIFIER WITH INTEGRATED DIGITAL DIAGNOSTICS DMOS POWER OUTPUT NON-SWITCHING HI-EFFICIENCY SINGLE-CHANNEL 1Ω DRIVING CAPABILITY HIGH OUTPUT POWER CAPABILITY 2x28W/ 4Ω @ 14.4V, 1KHZ, 10% THD, 2x40W/4Ω EIAJ MAX. OUTPUT POWER 2x75W/2Ω, 1x150W/1Ω
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TDA7575PD
2x28W/
2x40W/4
2x75W/2,
1x150W/1
12/26dB,
2x40w
mosfet characteristcs
free down load 5v 3W AUDIO AMPLIFIER CIRCUIT
Gv2 overload
TDA7575PD
low noise audio amplifier
2x75W
2x28W
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Untitled
Abstract: No abstract text available
Text: 1 3 T- Ma x 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT60S20B2CT 1 2 200V 2X75A 3 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses
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APT60S20B2CT
2X75A
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2MBi 75S-120
Abstract: 75S-120 2mbi igbt 75A 1200v
Text: 2-Pack IGBT 1200V 2x75A 2MBI 75S-120 • Outline Drawing IGBT MODULE S-Series ■ Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching
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2x75A
75S-120
2MBi 75S-120
75S-120
2mbi
igbt 75A 1200v
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APT20M36BLL
Abstract: APT60S20B2CT
Text: 1 3 T- Ma 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 x APT60S20B2CT 1 2 200V 2X75A 3 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses
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APT60S20B2CT
2X75A
APT20M36BLL
APT60S20B2CT
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Untitled
Abstract: No abstract text available
Text: 1 3 T- Ma 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 x APT60S20B2CT G 200V 2X75A 1 *G Denotes RoHS Compliant, Pb Free Terminal Finish. 2 3 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode
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APT60S20B2CT
2X75A
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gz34s
Abstract: capacitor 1500 uF gz34 2X40 2X300 2X400
Text: GZ 34 S - NEW GZ 34 S DOUBLE ANODE RECTIFYING TUBE Base: OCTAL Uf If Dimension and connections: = 5V = 1,9 A Typical characteristic: Capacitor input f Utreff I= C Rt U= = = = = = = 50 Hz 2x300 250 60 2x75 330 2x400 250 60 2x125 430 2x500 200 60 2x175 560 2x550
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2x300
2x400
2x125
2x500
2x175
2x550
2x200
gz34s
capacitor 1500 uF
gz34
2X40
2X300
2X400
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Untitled
Abstract: No abstract text available
Text: HBL2350 2x75A High Performance Dual Channel Brushless DC Motor Controller with USB, Encoder Inputs and CAN Interface Roboteq’s HBL2350 is a high-current, dual channel controller for hall-sensor equipped Brushless DC motors. The controller uses the position information from the sensors to sequence power
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HBL2350
2x75A
HBL2350
32-bit
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Untitled
Abstract: No abstract text available
Text: 1 3 T- Ma 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 x APT60S20B2CT 1 200V 2X75A 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses
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APT60S20B2CT
2X75A
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Untitled
Abstract: No abstract text available
Text: 2-Pack IGBT 1200V 2x75A 2MBI 75S-120 • Outline Drawing IGBT MODULE S-Series ■ Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching
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2x75A
75S-120
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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Untitled
Abstract: No abstract text available
Text: TDA7575B 2 x 75W multifunction dual-bridge power amplifier with integrated digital diagnostics Features • Multipower bcd technology ■ MOSFET output power stage ■ DMOS power output ■ New high-efficiency class AB ■ Single-channel 1driving capability
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TDA7575B
1x150
PowerSO36
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SAF7730HV
Abstract: BB 509 varicap diode CP3236D TDA8841 phx4nq60e PHX10NQ60E SAA4849PS Philips SAF7730HV om8839ps saf7730hv 331
Text: PHILIPS SEMICONDUCTORS DN 54 December 31, 2004 SEE DN54 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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d331 npn transistor
Abstract: pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450
Text: Application Report SLEA055 - JUNE 2006 TAS5508-5142K7EVM Application Report Jonas Svendsen, Tomas Bruunshuus Digital Audio & Video Products The TAS5508-5142K7EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5508BPAG and TAS5142DKD, from Texas Instruments TI .
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SLEA055
TAS5508-5142K7EVM
TAS5508BPAG
TAS5142DKD,
32-bit
24-bit
48-bit
TIC-HSINK-015
d331 npn transistor
pin configuration NPN transistor c458
transistor C458
D331 transistor
D330 NPN transistor
d331 npn transistor pin configuration
smd diode D450
c458 NPN transistor
smd diode D451
transistor D450
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1700V-Types
Abstract: GB 170 GB170 BSM 15 GB
Text: Click on outline no. IGBT Standard Modules continued VCEsat outline outline W V 1700V-Types 3-Phase-Full-Bridges BSM 50 GD 170 DL BSM 75 GD 170 DL 1700 1700 480 625 2,7 2,7 IS8 IS8 Tripack BSM 100 GT 170 DL BSM 150 GT 170 DL 1700 3x100 0,130 960 1700 3x150 0,100 1250
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700V-Types
3x100
3x150
2x100
2x150
2x200
1700V-Types
GB 170
GB170
BSM 15 GB
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gz34s
Abstract: 2X550 GZ34
Text: CZ 34 S - NEW cellence with every decibel GZ 34 S DOUBLE ANODE RECTIFYING TUBE Base: o c t a l 5V = 1,9 A = Typical characteristic: max 33,3 f = 50 Hz Utreff L C Rt U= = 2x300 = 250 =60 = 2x75 = 330 2x400 250 60 2x125 430 2x500 200 60 2x175 560 2x550 160 60
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2x300
2x400
2x500
2x550
2x125
2x175
2x200
gz34s
GZ34
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RJ12 pin configuration
Abstract: Amphenol RJMG 2x75 RJ12 PINOUT
Text: D E F REVISIONS SYM ZONE H y / y — LED 2 ECN, ERN NO. ADD TU R N R ATIO N DATE ”9 ” H1 TYPING C O R R EC TIO N H2 ADD D IM . ETC TO L, APPRD. 2 0 0 1 / 0 1 / 2 6 S.C. 2 0 0 1 / 0 8 / 0 8 S.C. 2 0 0 1 / 0 9 / 2 6 D.U.U. 14 .0 8 ± 0 .0 8 [.5 4 4 ± .0 0 3 ]
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el34
Abstract: PENTODE EL34 el34 philips ka 1488 el 34 2X125 2x91 Vg2-250V 2X19
Text: PHILIPS EL 34 OUTPUT PENTODE PENTHODE DE SORTIE ENDPENTODE Heating: indirect by A.C. or D.C.; parallel supply Chauffage: indirect par C.A. ou C*C.; alimentation en parallèle Heizung: indirekt durch Wechsel oder Gleichstrom; Parallelspeisung Vf » If * 6,3V
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EL34
Abstract: el34b el34 philips PENTODE EL34 EL34 tube tube el34 EL34-B EL34 pentode data EL34 el 34
Text: EL34 A .F. OUTPUT PENTODE Pentode intended for use as A .F . power am plifier. QUICK REFERENCE DATA Anode curren t T ransconductance A m plification factor Output power, class B la S ßS2Sl HEATING: Indirect by A .C . or D .C .; p arallel supply H eater voltage
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7Z06223-5
EL34
el34b
el34 philips
PENTODE EL34
EL34 tube
tube el34
EL34-B
EL34 pentode
data EL34
el 34
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rgn 1064
Abstract: RGN2004 RGN1503 UY1N rgn1064 TFK 19 018 rgn 1883 RGN504 TFK 036 GN2004
Text: Type y erw. ff V AB 1 i/ fM AX 1 A X 50 , 298 (A 1 /7 7 (V) AB 1 D+D 0.65 200 2 x 0.8 AB 2 D-D 0.65 200 2 x 0 .8 AX 1 ZW A X 50 ZW 3,75 2x500 AZ 1 ZW 1.1 2x500 2x300 AZ 2 ZW 2 2 X 300 AZ 3 ZW 2 2x350 AZ 4 ZW 2,2 8^500 A Z 11 ZW 1.1 2 a 500 2x300 A Z 12 ZW
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2x500
2x500
2x300
2x350
2x300
rgn 1064
RGN2004
RGN1503
UY1N
rgn1064
TFK 19 018
rgn 1883
RGN504
TFK 036
GN2004
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2X80
Abstract: 3x200 D235G M100G
Text: IGBT Standard Modules . Type VCES ¡c V A D thJC K /W p ' lot W ^CEsat outline Type V VcES 'c j R ihJCi P V A : K /W ! jVCEsa,'outline V < < 60 0 V -T y p e s 12 0 0 V -T y p e s co n tin u e d 3 -P h a s e -F u ll-B rid g e s BSM 10G D 60D LC 600 6 x ID
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6x150
2X80
3x200
D235G
M100G
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2x61
Abstract: No abstract text available
Text: PROOUCT NUMBER S E E NO TE 3> OPTIO N AL • INSULATION PLU G m r LEN G TH REVISIONS NOTE; THIS OOCUMEMT IS THE PROPERTY OF ANO EMB00CS PROPRIETARY INFORMATION OF THE 8ER0 EUCTCONCS, INC. E C N /D D R # BY V 4 1 100 V61633 V70994 JCS LSS EPK JM SH EET INDEX
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V61633
V70994
OOC/178
3/22Z2Q.
2x61
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LT3973-3.3
Abstract: 2x52 2X72 LM3670MFX-0.8 LT3971-3.3
Text: r All rights strictly reserved. Reproduction o r issue to third parties in any form Tous droits strictem ent reserves. sous quelque form e que ce soit sans autorisation ecrite du propietaire. Property o f B £ R G ELECTRONICS Propriété d e © B E R G ELECTRONICS.
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001-lt
s/17/ao
LT3973-3.3
2x52
2X72
LM3670MFX-0.8
LT3971-3.3
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2x52
Abstract: d5cv
Text: r All rights strictly reserved. Reproduction or issue to third parties in ony form whatever is not permitted without written authority from the proprietor. Property of B E R G ELECTRONICS Tous droits strictement reserves. BERG Reproduction ou communication o des tiers interdite
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MRC106
Abstract: BCM7 G37 IC 2222-581 Philips 2222-581 BLV945A C360 transistor c36 ferroxcube 4322 2322 151
Text: Philips Semiconductors ^53^31 0 Q 2 CI 5 4 ,1 ?G2 MB A P X Product specification BLV945A UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain • Emitter-ballasting resistors for an optimum temperature profile
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0QSCI54T
BLV945A
OT324
MRC106
MRC106
BCM7
G37 IC
2222-581
Philips 2222-581
BLV945A
C360
transistor c36
ferroxcube 4322
2322 151
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