2U TRANSISTOR Search Results

Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

TRANSISTOR A63

Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Contextual Info: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

SOT-23 EBC

Abstract: MPSA63 MMBTA63 PZTA63 Fairchild Semiconductor - Process
Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

MPSA63

Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

KSP12

Abstract: KST63
Contextual Info: FUNCTION GUIDE TRANSISTORS 1-5. Darlington Transistors 1-5-1. SOT-23 Type Transistors Condition Device and Polarity NPN Vceo V PNP KST13<1M) KST14I1N) 30 30 30 30 KST63(2U) KST64(2V) lc (A) lc <mA) MIN 5 5 5 5 100 100 100 100 10K 10K 10K 10K 0.3 0.3 0.5

KSH200

Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Contextual Info: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP

Contextual Info: AT00511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)150þ I(CBO) Max. (A).2u @V(CBO) (V) (Test Condition)8

3n214

Abstract: 3n215 3N217
Contextual Info: TYPES 3N 2U THRU 3N217 N-CHANNEL DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 9 1 . M A R C H 1 9 7 3 DIODE-PROTECTED DEPLETION-TYPE MOS SILICON TRANSISTORS For Low-Power Chopper or Switching Applications •

SMA6010

Abstract: SMA4033 SMA6511 SMA4032
Contextual Info: • Transistor Arrays SMA Type No Vceo (V) le 'Icp ; ;a ) hfE min Eq «vat# , Girant Diagram SMA4020 —60 “ 4 v—6 2000 22 SMA4021 i —60 - 3 ;-6 2000 ! 2' SMA4030 100 3 ;.5 2000 ! SMA4032 100 3 5: 2000 ; 2U SMA4033 100 2 4 2000 2? 60 4:6: 2000 -6 0

TRANSISTOR A63

Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
Contextual Info: S E M IC O N D U C T O R tm MMBTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / MMBTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.

Contextual Info: 2SC3946 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)200m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2u @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)50m

Contextual Info: 2SC4212 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)200m Absolute Max. Power Diss. (W)5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2u @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)50m

KST12

Abstract: KST63
Contextual Info: TRANSISTORS FUNCTION GUIDE 1-5-1. SOT-23 Type Transistors Device and Polarity NPN Condition VcEO PNP KST12 M KST14(1N) KST63(2U) KST64(2V) (V) 3Ó 30 30 30 le V ce 0 3 0.3 03 0.3 00 5 5 5 5 hpF lc (A) MIN M AX 100 10K 100 10K 100 10K 100 10K Condition lc

TRANSISTOR 2SC2178

Abstract: TRANSISTOR 2SC
Contextual Info: 2 s c 2178 LICON NPN EPITAXIAL PLANAR TRANSISTOR O V H F*2U i«ffl o V H F —Ba n d p o w e r Am plifier Applications ii tt x m m INDUSTRIAL APPLICATIONS P 0 = 1 5 W M i n ( f = 1 7 5 MHz > V0 0 = l 2.5 V, P | = l . 3W ) • Recommend f o r Large Signal

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM 3S 2U 93 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TLP320-3,321 -3,521 -3 TLP523-3,525G-3,620-3 TLP621 -3,624-3,626-3 TLP627-3,628-3,629-3 12PIN DIP 3-CHANNELS TYPE 12PIN DIP 3CH Unit in mm SOLID STATE RELAY I / O MODULE DATA INTERFACE J1J 2U . J3f 'l L4 J5J U6 , THREE-PHASE MOTOR CONTROL The TOSHIBA 3 channels type series consist of 3 channels of 4

Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM 3S 2U 93 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM 3S 2U 93 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM3S 2U 93 - 1 3 4 4 0 . 2 5 4 9 S P M S 258B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM3S 2U 93 - 1 3 4 4 0 . 2 5 4 9 S P M S 258B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM3S 2U 93 - 1 3 4 4 0 . 2 5 4 9 S P M S 258B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM3S 2U 93 - 1 3 4 4 0 . 2 5 4 9 S P M S 258B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S2U93 Microcontroller D ATA SHE E T D S -LM3S 2U 93 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments