2T TRANSISTOR Search Results

1N916

Abstract: LMBT4403LT1G MMBT4401LT1 MMBT4403LT1 LMBT4403LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G 2T

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

LMBT4403WT1G

Abstract: 1N916 MMBT4401LT1 MMBT4403LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

RXB06150W

Abstract: FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor
Contextual Info: Philips Sem iconductors Prelim inarjrspecification - i ^ NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 3 3 - / 5 ' 1 RXB06150W _ SbE D • 711DflEb D O H b S 45 ^2T FEATURES DESCRIPTION APPLICATIONS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

MMBT4403

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

MARKING SMD PNP TRANSISTOR 2t

Abstract: 2T SMD TRANSISTOR TRANSISTOR SMD 2t sot23 CMBT4403
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

smd marking cb SOT23 transistor

Abstract: MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 1995 I HT2 Q_ PARTMARKING DETAIL - 2T ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V CBO 90 V C ollector-E m itter Voltage V CEO

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T

smd transistor 2T

Abstract: 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P -N - P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .14 "Iprüi Pin configuration 1 = BASE 2 » EMITTER 3 * COLLECTOR ABSOLUTE MAXIMUM RATINGS Colleetor-emitter voltage Collector current DC

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 * EMITTER 3 « COLLECTOR 2.6 2.4 _ 1.02 0.8ST 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00

Contextual Info: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR HT2 PARTMARKING DETAIL - 2T ABSOLUTE MAXIMUM RATINGS PARAM ETER S YM B O L Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amtj = 2 5 ° C

Marking br sot23 Transistor

Abstract: MMBT4403 2T sot-23 sot23 2t marking pc sot-23 transistor BR SOT23 MMBT4403 2T transistor 2T Transistor 2 a sot23 sot 23 transistor
Contextual Info: MMBT4403 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Switching transistor MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage

Contextual Info: INTERNATIONAL RECTIFIER 2t>E D • HflSS4S2 QQ1DST7 S ■ Data Sheet No. PD-9.619A T-3^-03 INSULATED GATE BIPOLAR TRANSISTOR International I “ R !Rectifier IRGBC30 600V, S3A FEATURES 600V, 23A, TO-220AB IGBT International Rectifier’s IRG series of Insulated Gate

CMBT4403

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N -P transistor M arking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 _L 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 .004 "

MMBT4403 UTC

Contextual Info: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

ssl2108

Abstract: SSL21082 sot12 SSL21081T Application Notes
Contextual Info: SSL21081T/2T/3T/4T GreenChip drivers for LED lighting Rev. 2 — 6 December 2011 Preliminary data sheet 1. General description The SSL2108X is a range of high-voltage Integrated Circuits ICs , intended to drive LED lamps in general lighting applications.