vth for mos 0,9
Abstract: 2SK0615 2SK615 SC-71
Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features 2.5±0.1 6.9±0.1 Drain to Source voltage 80 V 20 V ±0.5 A ID Max drain current Allowable power dissipation Channel temperature Storage temperature
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2SK0615
2SK615)
SC-71
vth for mos 0,9
2SK0615
2SK615
SC-71
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Untitled
Abstract: No abstract text available
Text: 2SK615 Silicon MOS FETs Small Signal 2SK615 Silicon N-Channel MOS Unit : mm For switching 6.9±0.1 ● Easy automatic- /manual-insertion due to M type package. Self-fix- 1.0 Direct drive possible with CMOS, TTL 0.85 ing to printed circuits board. 4.5±0.1
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2SK615
500mA
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2SK61
Abstract: 2SK0615 2SK615 SC-71
Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as
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2SK0615
2SK615)
SC-71
2SK61
2SK0615
2SK615
SC-71
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2SK615
Abstract: SC-71
Text: Silicon MOS FETs Small Signal 2SK615 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 • Absolute Maximum Ratings (Ta = 25°C) * Symbol 0.55±0.1 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage
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2SK615
SC-71
500mA
2SK615
SC-71
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Untitled
Abstract: No abstract text available
Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as
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2SK0615
2SK615)
SC-71
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2SK0615
Abstract: 2SK615 SC-71
Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching unit: mm • Features 6.9±0.1 * 1.0 0.85 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage VGSO 20 V Drain current ID ±0.5 A Max drain current IDP
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2SK0615
2SK615)
2SK0615
2SK615
SC-71
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2SK0615
Abstract: 2SK615 SC-71
Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as
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2SK0615
2SK615)
SC-71
2SK0615
2SK615
SC-71
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SSSMini3-F1 transistor
Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)
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2SK0601
2SK614)
2SK664)
2SK665)
2SK1228
2SK1374
2SK3539
2SK3546J
2SK3547
2SK2211
SSSMini3-F1 transistor
2SK0664
2sk60
2SK0601
2SK0614
2SK0615
2SK0655
2SK0656
2SK601
2SK614
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2SK582
Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
Text: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS
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2SK578
2SK579
2SK580
2SK581
2SK582
10mfti
2SK809
2SK604
25dBtyp
100MHz
2SK582
2SK600
2SK609
2SK610
2SK606
2SK603
2sk611
2SK590
2SK604
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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OCR Scan
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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2sk to-92
Abstract: No abstract text available
Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80
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OCR Scan
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2SK601
2SK614
2SK615
2SK620
A2SK2276
A2SK2342
2sk to-92
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2SK620
Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663
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OCR Scan
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK620
3SK268
3SK269
3SK286
CAMERA MOS
2SJ164
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Untitled
Abstract: No abstract text available
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type
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OCR Scan
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2SJ0385
A2SK2380
2SK1103
2SJ364
2SJ163
2SK662
2SK198
2SK663
2SK374
2SK123
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2SK2276
Abstract: 2sk227
Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40
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2SK601
2SK614
2SK615
2SK620
2SK2276
2SK2277
2SK2342
2SK2474
2SK2495
A2SK2660
2SK2276
2sk227
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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