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    2SK3937

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits • Basic Part Number 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° 0.10 max. 0.55±0.05 Display at No.1 lead  2SK3937 x 2


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    PDF 2002/95/EC) UP0487C 2SK3937 2SK3937

    2SK3937

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits • Basic Part Number 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° 0.10 max. 0.55±0.05 Display at No.1 lead  2SK3937 x 2


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    PDF 2002/95/EC) UP0487C 2SK3937 2SK3937

    2sk3937

    Abstract: UP0487C
    Text: Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits • Basic Part Number 1 5° 2 3 0.50 (0.50) 1.00±0.05 1.60±0.05 5° 0.10 max. 0.55±0.05 Display at No.1 lead  2SK3937 x 2 Symbol Rating Unit Drain-source surrender voltage


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    PDF UP0487C 2SK3937 2sk3937 UP0487C

    2sk3937

    Abstract: UP0487C
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° (0.20) ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol


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    PDF 2002/95/EC) UP0487C 2sk3937 UP0487C

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits M Di ain sc te on na tin nc ue e/ d • Basic Part Number 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05  Absolute Maximum Ratings Ta = 25°C


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    PDF 2002/95/EC) UP0487C

    2sk3937

    Abstract: UP0487C
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487CG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package (Each transistor is separated)


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    PDF 2002/95/EC) UP0487CG 2SK3937 2sk3937 UP0487C

    2SK3937

    Abstract: UP0487C
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487CG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package (Each transistor is separated)


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    PDF 2002/95/EC) UP0487CG 2SK3937 UP0487C

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487CG Silicon N-channel MOSFET For switching circuits • Features  Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package (Each transistor is separated)


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    PDF 2002/95/EC) UP0487CG 2SK3937

    2SK3937

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487CG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package (Each transistor is separated)


    Original
    PDF 2002/95/EC) UP0487CG 2SK3937 2SK3937

    2sk3937

    Abstract: UP0487C
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° (0.20) ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol


    Original
    PDF 2002/95/EC) UP0487C 2sk3937 UP0487C