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    2SK354 Search Results

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    2SK354 Price and Stock

    ROHM Semiconductor 2SK3541T2L

    MOSFET N-CH 30V 100MA VMT3
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    DigiKey 2SK3541T2L Cut Tape 143,813 1
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    2SK3541T2L Digi-Reel 143,813 1
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    2SK3541T2L Reel 136,000 8,000
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    Verical 2SK3541T2L 88,000 8,000
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    Newark 2SK3541T2L Cut Tape 5
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    Bristol Electronics 2SK3541T2L 478
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    Quest Components 2SK3541T2L 4,253
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    2SK3541T2L 42
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    TTI 2SK3541T2L Reel 336,000 8,000
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    Ameya Holding Limited 2SK3541T2L 8,000 1
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    ComSIT USA 2SK3541T2L 24,000
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    Avnet Asia 2SK3541T2L Reel 16,000 24 Weeks 8,000
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    Avnet Silica 2SK3541T2L 11 Weeks 8,000
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    New Advantage Corporation 2SK3541T2L 112,000 1
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    Win Source Electronics 2SK3541T2L 341,000
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    Panasonic Electronic Components 2SK3546J0L

    MOSFET N-CH 50V 100MA SSMINI3-F1
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    Panasonic Electronic Components 2SK3547G0L

    MOSFET N-CH 50V 100MA SSSMINI3
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    DigiKey 2SK3547G0L Reel 10,000
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    Panasonic Electronic Components 2SK354700L

    MOSFET N-CH 50V 100MA SSSMINI3
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    DigiKey 2SK354700L Digi-Reel 1
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    2SK354700L Cut Tape
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    Quest Components 2SK354700L 8,000
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    • 10000 $0.0875
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    2SK354700L 2,530
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    • 1000 $0.09
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    Panasonic Electronic Components 2SK3546G0L

    MOSFET N-CH 50V 100MA SMINI3-F2
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    Find more 2SK354 price and stock on Findchips.com

    2SK354 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK354 Unknown FET Data Book Scan PDF
    2SK3541 ROHM Small switching (30V, 0.1A) Original PDF
    2SK3541 ROHM 2.5V Drive Nch MOS FET Original PDF
    2SK3541 ROHM Small switching (30V, 0.1A) Original PDF
    2SK3541 ROHM TRANS MOSFET N-CH 30V 0.1A 3VMT3 Original PDF
    2SK3541T2L ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V .1A VMT3 Original PDF
    2SK3541T2L ROHM TRANS MOSFET N-CH 30V 0.1A 3VMT3 T/R Original PDF
    2SK3543 Toshiba Original PDF
    2SK3543 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3544 Toshiba High-frequency Junction FET Original PDF
    2SK3544 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3546G0L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A SS-MINI-3P Original PDF
    2SK3546J Panasonic Silicon N-Channel MOSFET Original PDF
    2SK3546J Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK3546J0L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A SS-MINI-3P Original PDF
    2SK3547 Panasonic Silicon N-Channel MOSFET Original PDF
    2SK3547 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK354700L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A SSS-MINI-3P Original PDF
    2SK3547G0L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A SSS-MINI-3P Original PDF
    2SK3549-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF

    2SK354 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		PDF 2002/95/EC) 2SK3547G

    2SK3544

    Abstract: marking code 346
    Text: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drainsource ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		PDF 2SK3544 2SK3544 marking code 346

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F


    Original     		PDF 2002/95/EC) 2SK3546G

    2SK3546G

    Abstract: 2sk3546
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3


    Original     		PDF 2002/95/EC) 2SK3546G 2SK3546G 2sk3546

    2SK3546J

    Abstract: 2sk3546
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546J Silicon N-Channel MOSFET For switching 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 Drain-source voltage Gate-source voltage (Drain open)


    Original     		PDF 2002/95/EC) 2SK3546J 2SK3546J 2sk3546

    2SK3541PT

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SK3541PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SOT-723 * Small surface mounting type. (SOT-723) * Low on-resistance


    Original     		PDF 2SK3541PT 100mA) OT-723 OT-723) 15Max. 2SK3541PT

    Untitled

    Abstract: No abstract text available
    Text: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drainsource ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		PDF 2SK3544

    Transistor marking code S

    Abstract: No abstract text available
    Text: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		PDF 2SK3544 Transistor marking code S

    K3543

    Abstract: No abstract text available
    Text: 2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3543 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.3 S (typ.)


    Original     		PDF 2SK3543 to150 K3543

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546J Silicon N-Channel MOSFET For switching 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 Symbol Drain-source voltage VDS Gate-source voltage (Drain open)


    Original     		PDF 2002/95/EC) 2SK3546J

    2SK3541

    Abstract: No abstract text available
    Text: 2SK3541 Transistor Small switching 30V, 0.1A 2SK3541 zExternal dimensions (Unit : mm) 1.2 0.8 (2) (3) 0.8 1.2 0.32 0.2 0.4 0.4 0.2 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment.


    Original     		PDF 2SK3541 100mA) 15Max. 2SK3541

    2SK3541VGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts 2SK3541VGP CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SOT-563 * Small surface mounting type. (SOT-563) * Low on-resistance


    Original     		PDF 2SK3541VGP 100mA) OT-563 OT-563) 2SK3541VGP

    2SK3541SGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SK3541SGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363)


    Original     		PDF 2SK3541SGP 100mA) SC-88/SOT-363 SC-88/SOT-363) 2SK3541SGP) 2SK3541SGP

    Untitled

    Abstract: No abstract text available
    Text: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		PDF 2SK3544

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFET SOT-723 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Drive circuits can be simple


    Original     		PDF OT-723 2SK3541 OT-723 100mA

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547 Silicon N-channel MOSFET Unit: mm 0.33+0.05 –0.02 For switching 0.10+0.05 –0.02 5˚ • High-speed switching • Wide frequency band • Gate-protection diode built-in


    Original     		PDF 2002/95/EC) 2SK3547

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547 Silicon N-channel MOSFET Unit: mm 0.33+0.05 –0.02 For switching 0.10+0.05 –0.02 5˚ • High-speed switching • Wide frequency band • Gate-protection diode built-in


    Original     		PDF 2002/95/EC) 2SK3547

    2SK3544

    Abstract: No abstract text available
    Text: 2SK3544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3544 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		PDF 2SK3544 2SK3544

    VGS-30V

    Abstract: 900v mosfet 2sk3549 2SK3549-01 2sk354
    Text: 2SK3549-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3549-01 VGS-30V 900v mosfet 2sk3549 2SK3549-01 2sk354

    2SK3547G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Gate-protection diode built-in


    Original     		PDF 2002/95/EC) 2SK3547G 2SK3547G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547 Silicon N-channel MOSFET Unit: mm 0.33+0.05 –0.02 For switching 0.10+0.05 –0.02 0.80±0.05 1.20±0.05 di p Pl lan nclu ea e se pla m d m des ne ain ain foll


    Original     		PDF 2002/95/EC) 2SK3547

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		PDF 2002/95/EC) 2SK3546G

    2SK3541SPT

    Abstract: N-Channel mosfet sot-363
    Text: CHENMKO ENTERPRISE CO.,LTD 2SK3541SPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching 30V, 100mA FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363)


    Original     		PDF 2SK3541SPT 100mA) SC-88/SOT-363 SC-88/SOT-363) 2SK3541SPT N-Channel mosfet sot-363

    2sk3549

    Abstract: 2SK3549-01 2SK3549 datasheet
    Text: 2SK3549-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3549-01 2sk3549 2SK3549-01 2SK3549 datasheet