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    2SK337 Price and Stock

    Rochester Electronics LLC 2SK3378ENTL-E

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK3378ENTL-E Bulk 57,699 1,623
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    Rochester Electronics LLC 2SK3377-Z-AZ

    2SK3377-Z-AZ - SWITCHING N-CHANN
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    DigiKey 2SK3377-Z-AZ Bulk 1 1
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    Panasonic Electronic Components 2SK3372GUL

    JFET N-CH 2MA SSSMINI3-F2
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    DigiKey 2SK3372GUL Reel 10,000
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    Panasonic Electronic Components 2SK33720RL

    JFET N-CH 2MA SSSMINI3-F1
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    Panasonic Electronic Components 2SK33720TL

    JFET N-CH 2MA SSSMINI3-F1
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    Find more 2SK337 price and stock on Findchips.com

    2SK337 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK337 Unknown FET Data Book Scan PDF
    2SK3370 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3371 Toshiba power MOSFET Original PDF
    2SK3371 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3372 Panasonic TRANS JFET N-CH 20V 0.47A 3SSSMINI3-F1 Original PDF
    2SK3372 Panasonic SSSMini3-F1 Original PDF
    2SK3372 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK33720RL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3P Original PDF
    2SK33720SL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3P Original PDF
    2SK33720TL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3P Original PDF
    2SK33720UL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3P Original PDF
    2SK3372GRL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3 Original PDF
    2SK3372GSL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3 Original PDF
    2SK3372GTL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3 Original PDF
    2SK3372GUL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 2MA 100MW SSSMINI-3 Original PDF
    2SK3373 Toshiba Switching Regulator and DC-DC Converter Applications Motor Drive Applications Original PDF
    2SK3373 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3373(TE16L1,NQ) Toshiba 2SK3373 - MOSFET N-CH 500V 2A 2-7J1B Original PDF
    2SK3374 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3374 Toshiba Silicon N Channel MOS Type (MOSV) FET Original PDF

    2SK337 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3374

    Abstract: 2SK3374
    Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3374 k3374 2SK3374 PDF

    2SK3373

    Abstract: No abstract text available
    Text: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3373 2SK3373 PDF

    2SK3371

    Abstract: 53-common
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm 5.2 ± 0.2 Features 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK3371 2SK3371 53-common PDF

    2SK3377

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3377 TO-251 MP-3 2SK3377-Z TO-252 (MP-3Z) designed for high current switching applications.


    Original     		2SK3377 2SK3377 O-251 O-252 O-251/TO-252 2SK3377-Z O-251) PDF

    2SK3377

    Abstract: D1432 2SK3377-Z 2SK3377-Z equivalent
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


    Original     		2SK3377 2SK3377 O-251 2SK3377-Z O-252 O-251/TO-252 D1432 2SK3377-Z 2SK3377-Z equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1


    Original     		2002/95/EC) 2SK3372 PDF

    K3373

    Abstract: 2SK3373 toshiba marking code transistor
    Text: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


    Original     		2SK3373 K3373 2SK3373 toshiba marking code transistor PDF

    k3374

    Abstract: 2SK3374
    Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


    Original     		2SK3374 k3374 2SK3374 PDF

    2SK3378ENTL

    Abstract: No abstract text available
    Text: 2SK3378 Silicon N Channel MOS FET High Speed Switching REJ03G1599-0200 Previous: ADE-208-805 Rev.2.00 Oct 23, 2007 Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V, ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V, ID = 20 mA) • 4 V gate drive device.


    Original     		2SK3378 REJ03G1599-0200 ADE-208-805) PTSP0003ZA-A 2SK3378ENTL PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current


    Original     		2SK3376TV PDF

    K3371

    Abstract: No abstract text available
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK3371 SC-64 K3371 PDF

    2SK3371

    Abstract: No abstract text available
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK3371 2SK3371 PDF

    2SK3372

    Abstract: ED-4701 3gv2
    Text: Silicon Junction FETs Small Signal 2SK3372 Silicon N-Channel Junction FET Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For impedance conversion in low frequency For electret capacitor microphone 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 2 0.15 min.


    Original     		2SK3372 2SK3372 ED-4701 3gv2 PDF

    2SK3373

    Abstract: K3373 k337
    Text: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


    Original     		2SK3373 2SK3373 K3373 k337 PDF

    K3371

    Abstract: 2SK3371 2SK3371,K3371
    Text: 2SK3371 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOS V 2SK3371 ○ スイッチングレギュレータ用 単位: mm 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 0.95 MAX. 0.6 ± 0.15 絶対最大定格 (Ta = 25°C) 項 目 記 号 定


    Original     		2SK3371 SC-64 K3371 2SK3371 2SK3371,K3371 PDF

    D1432

    Abstract: M2SK3377 2SK3377 2SK3377-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3377 TO-251 2SK3377-Z TO-252 designed for high current switching applications.


    Original     		2SK3377 2SK3377 O-251 2SK3377-Z O-252 O-251/TO-252 O-251) D1432 M2SK3377 2SK3377-Z PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		2SK3376TV PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For impedance conversion in low frequency For electret capacitor microphone


    Original     		2002/95/EC) 2SK3372 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SK3377 TO-252 Low Ciss : Ciss = 760 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.0 V, ID = 10 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 78 m Unit: mm +0.1 2.30-0.1 0.127 max


    Original     		2SK3377 O-252 PDF

    k3374

    Abstract: 2SK3374
    Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3374 k3374 2SK3374 PDF

    2SK3376TK

    Abstract: No abstract text available
    Text: 2SK3376TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3376TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.9±0.1 絶対最大定格 Ta=25℃ 1.2±0.05 0.32±0.05 0.45 0.45 0.22±0.05 0.395mm 厚薄型パッケージのため薄型マイクロフォンに最適


    Original     		2SK3376TK 395mm 2SK3376TK PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


    Original     		2SK3373 PDF

    K3371

    Abstract: No abstract text available
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK3371 K3371 PDF

    2SK3377-Z equivalent

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3377 TO-251 2SK3377-Z TO-252 designed for high current switching applications.


    Original     		2SK3377 2SK3377 O-251 O-252 O-251/TO-252 2SK3377-Z O-251) 2SK3377-Z equivalent PDF