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    2SK3210STL Search Results

    2SK3210STL Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3210STL-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 30A 45Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    2SK3210STL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3210STL Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

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    2SK3210

    Abstract: 2SK3210L 2SK3210STL
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d-900 Unit2607 2SK3210 2SK3210L 2SK3210STL

    2SK3210

    Abstract: 2SK3210L 2SK3210STL
    Text: 2SK3210 L , 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z) Rev.3.00 Sep. 30, 2004 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3210 REJ03G0414-0300 ADE-208-760A Av-900 Unit2607 2SK3210L 2SK3210STL

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B Note14

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B