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    2SK315 Search Results

    2SK315 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3155-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 15A 130Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK3158-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 30A 45Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK3156-E Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3150STL-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 20A 60Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3151-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 50A 15Mohm To-3P Visit Renesas Electronics Corporation
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    2SK315 Price and Stock

    Rochester Electronics LLC 2SK315F-SPA-AC

    NCH J-FET
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    DigiKey 2SK315F-SPA-AC Bulk 1,211
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    Rochester Electronics LLC 2SK315E-SPA-AC

    NCH J-FET
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    DigiKey 2SK315E-SPA-AC Bulk 2,664
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    Aptina Imaging 2SK315F-SPA-AC

    2SK315F-SPA-AC
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    Verical 2SK315F-SPA-AC 317,500 1,481
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    2SK315F-SPA-AC 45,000 1,481
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    Aptina Imaging 2SK315E-SPA-AC

    2SK315E-SPA-AC
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    Verical 2SK315E-SPA-AC 32,500 3,258
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    2SK315E-SPA-AC 5,000 3,258
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    Renesas Electronics Corporation 2SK3159-E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3159-E 2,949
    • 1 $11.361
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    • 100 $11.361
    • 1000 $5.6805
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    Find more 2SK315 price and stock on Findchips.com

    2SK315 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK315 Sanyo Semiconductor FM tuner high-frequency amplifiers Original PDF
    2SK315 Unknown Scan PDF
    2SK315 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK315 Unknown FET Data Book Scan PDF
    2SK315 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK315 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK315 Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF
    2SK315 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK315 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SK3150 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3150L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3150S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3150S Renesas Technology SMD, High Speed Power Amplifier, 100V 20A 50W, MOS-FET N-Channel enhanced Original PDF

    2SK315 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK3150 L ,2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750(Z) 1st. Edition January 1999 Features • • • Low on-resistance R DS =45mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK3150 ADE-208-750 D-85622 Hitachi DSA002780

    2SK3157

    Abstract: Hitachi DSA00280
    Text: 2SK3157 Silicon N Channel MOS FET High Speed Power Switching ADE-208-769A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS = 50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G


    Original     		PDF 2SK3157 ADE-208-769A 220FM D-85622 2SK3157 Hitachi DSA00280

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =100 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1


    Original     		PDF 2SK3154 ADE-208-682A 220AB D-85622 Hitachi DSA00280

    HX 830

    Abstract: HITACHI DIODE 2SK3159
    Text: 2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 Z Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3159 ADE-208-774 HX 830 HITACHI DIODE 2SK3159

    2SK3154

    Abstract: 2SK3154-E PRSS0004AC-A
    Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 Previous: ADE-208-682A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3154 REJ03G1079-0300 ADE-208-682A) PRSS0004AC-A O-220AB) 2SK3154 2SK3154-E PRSS0004AC-A

    2SK3140

    Abstract: 2SK3156 2SK3156-E PRSS0004AC-A
    Text: 2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0300 Previous: ADE-208-683A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3156 REJ03G1081-0300 ADE-208-683A) PRSS0004AC-A O-220AB) 2SK3140 2SK3140 2SK3156 2SK3156-E PRSS0004AC-A

    2SK3157

    Abstract: 2SK3157-E PRSS0003AD-A
    Text: 2SK3157 Silicon N Channel MOS FET High Speed Power Switching REJ03G1082-0300 Previous: ADE-208-769A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3157 REJ03G1082-0300 ADE-208-769A) PRSS0003AD-A O-220FM) 2SK3157 2SK3157-E PRSS0003AD-A

    2SK3154

    Abstract: Hitachi DSA00239
    Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original     		PDF 2SK3154 ADE-208-682A 220AB 2SK3154 Hitachi DSA00239

    2SK3152

    Abstract: A1002 Hitachi DSA00239
    Text: 2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM


    Original     		PDF 2SK3152 ADE-208-732 220FM 2SK3152 A1002 Hitachi DSA00239

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A Z 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 100 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original     		PDF 2SK3154 ADE-208-682A 220AB Hitachi DSA002749

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 Z 1st. Edition Feb. 1999 Features • Low on-resistance R DS =100mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		PDF 2SK3152 ADE-208-732 220FM D-85622 Hitachi DSA00276

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 D 4 1


    Original     		PDF 2SK3150 Hitachi DSA002749

    Hitachi DSA0076

    Abstract: 2SK3153
    Text: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching ADE-208-733A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =65mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		PDF 2SK3153 ADE-208-733A 220FM Hitachi DSA0076 2SK3153

    2SK3150

    Abstract: Hitachi DSA00347
    Text: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3150 ADE-208-750A Hitachi DSA00347

    2SK3150

    Abstract: Hitachi DSA0076
    Text: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750B (Z) 3rd. Edition Mar. 2001 Features • Low on-resistance R DS =45mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK3150 ADE-208-750B Hitachi DSA0076

    2sk3155

    Abstract: Hitachi DSA00280
    Text: 2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C Z 4th. Edition Feb. 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G


    Original     		PDF 2SK3155 ADE-208-768C 220FM D-85622 2sk3155 Hitachi DSA00280

    2SK3153

    Abstract: 2SK3153-E PRSS0003AD-A
    Text: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching REJ03G1078-0300 Previous: ADE-208-733A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =65 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3153 REJ03G1078-0300 ADE-208-733A) PRSS0003AD-A O-220FM) 2SK3153 2SK3153-E PRSS0003AD-A

    ADE-208-747B

    Abstract: 2SK3151 2SK3151-E PRSS0004ZE-A SC-65
    Text: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 Previous: ADE-208-747B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3151 REJ03G1076-0400 ADE-208-747B) PRSS0004ZE-A ADE-208-747B 2SK3151 2SK3151-E PRSS0004ZE-A SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 65 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-220FM Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SK3153 O-220FM

    Untitled

    Abstract: No abstract text available
    Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-682A Z 2nd. Edition February 1999 Features • Low on-resistance R ds = 100 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		PDF 2SK3154 ADE-208-682A

    Untitled

    Abstract: No abstract text available
    Text: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK


    OCR Scan     		PDF 2SK3150

    2SK315

    Abstract: DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo
    Text: S ANYO SEMICONDUCTOR 2SK315 CORP 15E D I 7TT?Q7b 1 00053^7 T- 3J~2 ^ I N -C h a n n e l Ju n c tio n Silico n F ie ld -E ffe ct Transistor 2040 FM Tuner Applications 1005B Features Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact.


    OCR Scan     		PDF 2SK315 1005B 0DGB752 DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo

    Untitled

    Abstract: No abstract text available
    Text: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • L ow on-resistance • on = 11.5 m il typ. H igh speed sw itching • 4 V gate drive device can be driven from 5 V source r ds Outline TO-3P Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		PDF 2SK3151

    Untitled

    Abstract: No abstract text available
    Text: 2SK3159 Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • • • Low on-resistance R ds = 23 m ii typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P 1. Gate 2. Drain Flange 3. Source ADE-208-774 (Z)


    OCR Scan     		PDF 2SK3159 ADE-208-774