2SK2797 Search Results

Contextual Info: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown 6.5±0.1 5.3±0.1 4.35±0.1 ■ Absolute Maximum Ratings TC = 25°C

2SK2797

Contextual Info: Panasonic P o w er F -M O S FE T s 2SK2797 Tentative S ilic o n N - C h a n n e l M O S U n it : m m For high-speed switching For high-frequency power amplification • Features • Avalanche energy capability guaranteed : EAS > lOmJ • High-speed switching : tf=15ns

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification • Features • Avalanche energy capability guaranteed : EAS > lOmJ • High-speed switching : tf=15ns

Contextual Info: 2SK2797 Power F-MOS FETs 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification 6.5±0.1 5.3±0.1 ● High-speed switching : tf=15ns ● No secondary breakdown Unit VDSS 200 V Gate-Source voltage

2SK2797

Contextual Info: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown Symbol Ratings Unit Drain to Source breakdown voltage

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2797 Tentative Silicon N-Channel MOS U nit : mm For high-speed switching For high-frequency power amplification • Features • Avalanche energy capability guaranteed : EAS > lOmJ • High-speed switching : tf=15ns

2SK2797

Abstract: 731-S
Contextual Info: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 ■ Absolute Maximum Ratings TC = 25°C

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>