2SK2769-01MR EQUIVALENT Search Results

2SK2769-01MR EQUIVALENT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TMP89FS60BUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003
TMP89FS60BFG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62BUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003
TMP89FM82DUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D

2SK2769-01MR EQUIVALENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK2769-01MR equivalent Abstract: 2SK2769-01MR Contextual Info: 2SK2769-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2769-01MR O-220F 2SK2769-01MR equivalent 2SK2769-01MR	PDF
Contextual Info: 2SK2769-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2769-01MR O-220F	PDF
2SK2769-01MR Abstract: 2SK2769 Contextual Info: 2SK2769-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 5,5Ω 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2769-01MR 2SK2769-01MR 2SK2769	PDF
Contextual Info: 2SK2769-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 5,5Ω 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2769-01MR	PDF
2SK2769-01MR Contextual Info: 2SK2769-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 5,5Ω 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2769-01MR 2SK2769-01MR	PDF
mosfet 600V 20A Abstract: 166MH 2SK2769-01MR Contextual Info: 2SK2769-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2769-01MR O-220F mosfet 600V 20A 166MH 2SK2769-01MR	PDF
TO220F15 Abstract: 2SK2769-01MR 2SK2769-01MR equivalent Contextual Info: 2SK2769-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2769-01MR O-220F15 SC-67 TO220F15 2SK2769-01MR 2SK2769-01MR equivalent	PDF
Contextual Info: FU JI 2SK2769-01MR llltU M e u M J E FAP-IIS Series N-channel MOS-FET 900V > Features - 5 ,5 Q 3,5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated	OCR Scan	2SK2769-01MR 0DD4723	PDF