Untitled
Abstract: No abstract text available
Text: 2SK2766-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications ±0.3 5.45 ±0.2 5.45 ±0.2 3.2 +0.3 20 Min 2.1±0.3 ±0.3 21.5 5.5 ±0.2 2.3 ±0.2 High speed switching Low on-resistance
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2SK2766-01R
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2SK2766-01R
Abstract: No abstract text available
Text: 2SK2766-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2766-01R
2SK2766-01R
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2SK2766-01R
Abstract: No abstract text available
Text: 2SK2766-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2766-01R
2SK2766-01R
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Untitled
Abstract: No abstract text available
Text: 2SK2766-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2766-01R
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2SK2766-01R
Abstract: No abstract text available
Text: 2SK2766-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2766-01R
2SK2766-01R
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Untitled
Abstract: No abstract text available
Text: 2SK2766-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2766-01R
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power Diode 800V 5A
Abstract: 2SK2766-01R
Text: 2SK2766-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2766-01R
power Diode 800V 5A
2SK2766-01R
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2SK2696
Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack
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O-220AB
O-220F15
Feb-00
2SK2696
2SK951
2SK2397
2SK2527
2SK2528
2SK2100
2SK2696
2sk3264
2SK2850
2sk2850 DATASHEET
2SK2648
2sk2648 transistor
2SK2654
2sk2648 equivalent
2SK2100
2SK2647
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2SK3102-01R
Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01
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2SK3340-01
2SK2870-01L,
2SK2871-01
2SK2872-01MR
2SK2873-01
2SK2638-01MR
2SK2639-01
2SK2754-01L,
2SK2755-01
2SK2756-01R
2SK3102-01R
2sk3102
2SK2850
2SK2640
2SK3264
2SK2640 equivalent
2SK2645
2SK3264-01MR
2sk3102-01
2SK2648 equivalent
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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MTP6N60E equivalent
Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Text: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S
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IRF820
IRF820A
IRF820AS
IRF820S
IRF830A
IRF830AS
IRF830S
IRF840
IRF840A
IRF840AS
MTP6N60E equivalent
buz91a equivalent
buz90 equivalent
IRFBE30 equivalent
IRFB11N50A equivalent
irfp460a equivalent
BUZ74 equivalent
2SK2645 "cross reference"
equivalent buz305
EQUIVALENT irfp22n50a
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2sk3337
Abstract: 2sk3102 2SK3264
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type Amps. Amps. 400 23 92 0.2 295 ±30 3.0 TO-247 5.5 450
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2SK3340-01
2SK2870-01L,
2SK2871-01
2SK2872-01MR
2SK2873-01
2SK2638-01MR
2SK2639-01
2SK2754-01L,
2SK2755-01
2SK2756-01R
2sk3337
2sk3102
2SK3264
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2SK4111
Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:
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2SK258
O-204AA/TO-3
2SK259
2SK258H
O-218
2SK695
2SK695A
2SK4111
2SK4110
2SK4106
2sk4112
2sk2671
2sk4113
2SK2648
2N5121
2N5160 equivalent
2SK2666
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Untitled
Abstract: No abstract text available
Text: FUJI s ik ô iE ir ü ô U Ê 2SK2766-01R N-channel MOS-FET FAP-IIS Series 800V 7A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 .3.5 0.6 > Applications -
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OCR Scan
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PDF
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2SK2766-01R
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2766-01R N-channel MOS-FET S tlM s u ltìU K FAP-IIS Series 800V > Features - 2Q 7A 80W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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OCR Scan
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PDF
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2SK2766-01R
80fJS
253fl7TE
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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Untitled
Abstract: No abstract text available
Text: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.
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OCR Scan
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2SK2646-01
2SK2647-01MR
2SK2762-01L,
2SK2763-01
2SK2764-01R
2SK2765-01
2SK2766-01R
2SK2648-01
2SK2649-01R
2SK2767-01
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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OCR Scan
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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OCR Scan
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PDF
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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OCR Scan
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PDF
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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PDF
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 •900 Volts Device Type 2SK2638-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L.S 2SK2641-01 FAP450 2SK2759-01R
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OCR Scan
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PDF
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2SK2638-01MR
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2640-01MR
2SK27S7-01
2SK2758-01L
2SK2641-01
FAP450
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2SK2642-01MR
Abstract: 2SK2652 2SK2876-01MR
Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2872-01MR 2SK2870-01L.S Maximum Ratinas I d A Pd (W) Voss (V) 450 8 30 450 8 50 8 450 50 Cha •acteristics (IVax.) Package
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OCR Scan
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PDF
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2SK2872-01MR
2SK2870-01L
2SK2871-01
2SK2873-01
2SK2638-01
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2876-01MR
2SK2642-01MR
2SK2652
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