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Toshiba America Electronic Components 2SK2605(Q) STM CODE 2SK2605(Q) STM CODE
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Verical	2SK2605(Q) STM CODE		20,000		20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SK2605
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Bristol Electronics	2SK2605		364			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SK2605		291			1 $14.985 10 $14.985 100 $11.655 1000 $10.656 10000 $10.656	Buy Now
ComSIT USA	2SK2605		372			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK2605QT SILICON N CHANNEL MOS TYPE (PI-MOSIII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2605QT		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK2605 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK2605	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SK2605	Toshiba	N-Channel MOSFET	Original	PDF
2SK2605	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK2605	Toshiba		Original	PDF
2SK2605	BERG Electronics	USB Product Specification	Scan	PDF
2SK2605	Toshiba	Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications	Scan	PDF

2SK2605 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) Low leakage current	Original	PDF	2SK2605
K2605 Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	PDF	2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA
k2605 Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : \|Yfs\| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current	Original	PDF	2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
k2605 Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605 Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) Low leakage current	Original	PDF	2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605
2SK2605 Abstract: 2sK2605 TRANSISTOR Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) Low leakage current	Original	PDF	2SK2605 2SK2605 2sK2605 TRANSISTOR
K2605 Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	PDF	2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR
2SK2605 Abstract: 2sK2605 TRANSISTOR Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) l Low leakage current	Original	PDF	2SK2605 2SK2605 2sK2605 TRANSISTOR
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	PDF
Toshiba TMPA8873 Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6	Original	PDF	SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	PDF	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
MOSFET TOSHIBA 2SK2917 Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6	Original	PDF	DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	PDF	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

2SK3878 equivalent Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	PDF	2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
TA1343NG Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 Text: システムカタログシステムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理伝送処理	Original	PDF	p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Text: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	PDF	BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	PDF	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
transistor 2sk2605 Abstract: 2sk2605 j3d marking Text: T O SH IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rßg (ON)= 1-9^ (Typ.) tt: j.x ig_ln tti_	OCR Scan	PDF	2SK2605 s100//s J--25 --90V, --27mH transistor 2sk2605 2sk2605 j3d marking
ss100 transistor Abstract: 2SK2605 Text: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Soree ON Resistance : Typ. High Forward Transfer Admittance : \|Yfs\| = 3.8S (Typ.) Low Leakage Current : I d SS“ 100/^A (Max.) (Vj)g = 640V)	OCR Scan	PDF	2SK2605 SS-100/ ss100 transistor 2SK2605
ss100 transistor Abstract: 2SK2605 transistor ss100 2sK2605 TRANSISTOR Text: TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd s 0N “ 1*90 (Typ.) High Forward Transfer Admittance : \|Yfs\| = 3.8S (Typ.)	OCR Scan	PDF	2SK2605 SS-100/ ss100 transistor 2SK2605 transistor ss100 2sK2605 TRANSISTOR
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2605 T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE tt-M O S III 2SK2605 HIGH SPEED, HIGH VO LTAGE SW ITCH IN G APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS • Low Drain-Sorce ON Resistance	OCR Scan	PDF	2SK2605
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 0 ± 0.3 • • • • ^ 3.2 ± 0.2 2 .7 1 0 .2	OCR Scan	PDF	2SK2605
2SK2605 Abstract: Diode FAJ 45 2sK2605 TRANSISTOR Diode FAJ 22 Text: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.3 03.2 ± 0.2 . 2.7± 0.2 J •	OCR Scan	PDF	2SK2605 2SK2605 Diode FAJ 45 2sK2605 TRANSISTOR Diode FAJ 22

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2SK2605 Price and Stock

Toshiba America Electronic Components 2SK2605(Q) STM CODE

Toshiba America Electronic Components 2SK2605

Toshiba America Electronic Components 2SK2605QT

2SK2605 Datasheets (6)

2SK2605 Datasheets Context Search

Untitled

K2605

k2605

k2605

2SK2605

K2605

2SK2605

5252 F 1009 4-pin

Toshiba TMPA8873

2SK2056

STR-G6551

k2645

MOSFET TOSHIBA 2SK2917

2SK3567 equivalent

2SK3878 equivalent

TA1343NG

2SK4207

std2n52

transistor 2sk2605

ss100 transistor

ss100 transistor

Untitled

Untitled

2SK2605