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    2SK1530 TOSHIBA Search Results

    2SK1530 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SK1530 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B Toshiba 2SJ

    2sk1530

    Abstract: 2SJ201 Toshiba 2SJ
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B 2sk1530 2SJ201 Toshiba 2SJ

    2SJ20

    Abstract: 2SK1530 2SJ201 Toshiba 2SJ
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B 2SJ20 2SK1530 2SJ201 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B

    2SK1530

    Abstract: 2SJ201 Toshiba 2SJ
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2-21F1B 2SK1530 2SJ201 Toshiba 2SJ

    2SJ201

    Abstract: 2SK1530 toshiba pb includes
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2SJ201 2SK1530 toshiba pb includes

    toshiba marking code transistor

    Abstract: 2SK1530 2SJ201 Toshiba 2SJ toshiba marking abbreviation transistor
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 toshiba marking code transistor 2SK1530 2SJ201 Toshiba 2SJ toshiba marking abbreviation transistor

    Toshiba 2SJ

    Abstract: toshiba marking code transistor 2SK1530 toshiba
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba

    2SK1530

    Abstract: 2SJ201 toshiba pb includes
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes

    Untitled

    Abstract: No abstract text available
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B

    2SK1530

    Abstract: 2SJ201
    Text: 2SK1530 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用 単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : |Yfs| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。


    Original     		PDF 2SK1530 2SJ201 2-21F1B 2002/95/EC) 2SK1530 2SJ201

    Untitled

    Abstract: No abstract text available
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B

    2Sj201

    Abstract: 2SK1530 Toshiba 2SJ 2SJ201 toshiba
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2Sj201 2SK1530 Toshiba 2SJ 2SJ201 toshiba

    toshiba pb includes

    Abstract: 2SJ201 2SK1530
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B toshiba pb includes 2SJ201 2SK1530

    2SJ201

    Abstract: 2SK1530 toshiba pb includes
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes

    2Sj201

    Abstract: 2SK1530
    Text: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SK1530


    OCR Scan     		PDF 2SJ201 -200V 2SK1530 2Sj201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode


    OCR Scan     		PDF 2SK1530 2SJ201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201


    OCR Scan     		PDF 2SK1530 2SJ201 2SK1530·

    transistor 1211

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 HIGH POWER AMPLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs | = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V j ) g g = —200V


    OCR Scan     		PDF 2SJ201 --200V 2SK1530 2-21F1 transistor 1211

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR HIGH POWER AMPLIFIER APPLICATION SILICON P CHANNEL MOS TYPE 2SJ201 U nit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs | = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V ]}g g = —200V


    OCR Scan     		PDF 2SJ201 --200V 2SK1530 2-21F1B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 HIGH POWER AMPLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs | = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V j ) g g = —200V


    OCR Scan     		PDF 2SJ201 2SK1530 100ms;

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : |Yfg| = 5.0S Typ. Complementary to 2SK1530


    OCR Scan     		PDF 2SJ201 20-5MAX. --200V 2SK1530

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss *200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : |Yfs | *5.0S(TYP.) . Complementary to 2SJ201


    OCR Scan     		PDF 2SK1530 2SJ201 Tc-25

    2SK1530

    Abstract: 2SJ201
    Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201


    OCR Scan     		PDF 2SK1530 2SJ201 2SK1530