2SK1518 CIRCUIT Search Results

2SK1518

Abstract: 2SK1518 equivalent 2SK1517 Hitachi DSA00334
Contextual Info: 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter

2sk1518

Abstract: Hitachi DSA002748
Contextual Info: 2SK1517, 2SK1518 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter

Hitachi DSA00279

Contextual Info: 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter

2SK1518

Abstract: 2SK1518-E 2SK1517 2SK1517-E PRSS0004ZE-A SC-65 2sk1518e
Contextual Info: 2SK1517, 2SK1518 Silicon N Channel MOS FET REJ03G0947-0200 Previous: ADE-208-1287 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns)

2SK1518 circuit

Abstract: 2SK1517 Hitachi DSA002779
Contextual Info: 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter

Contextual Info: 2SK1517, 2SK1518 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode trr =120 ns • Suitable for motor control, switching regulator, DC-DC converter

2SK1518 equivalent

Abstract: 2SK151 2sk1518 2SK1517 DSA003639 2SK1518 circuit
Contextual Info: 2SK1517, 2SK1518 Silicon N-Channel MOS FET ADE-208-1287 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter

2sk1518

Abstract: 2SK1518 circuit
Contextual Info: 2SK1517,2SK1518 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itch in g Features • L ow on-resistanee • H igh speed sw itch in g • L ow drive current • B uilt-in fast recovery d iod e t^ = 120 ns • Suitable for m otor control, sw itch in g regulator, D C -D C converter

2SK1517

Abstract: 2SK1518
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK1518-E

Abstract: 2SK1517 2SK1517-E 2SK1518 PRSS0004ZE-A SC-65
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2SK1778

Abstract: 2SK1776 2SJ235 2SJ175 2SJ176 2SJ182 2SJ236 2SJ237 2SK1093 2SK1094
Contextual Info: HITACHI 12 DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

2SK1778

Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2sj2 high voltage p channel mosfet

Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

Diode DII

Abstract: 2SK299 2SK1518 equivalent 2SJ68 2SK1058 2sk135 application note 2SK1058 cross reference 2SK2265
Contextual Info: Section 5 Absolute Maximum Ratings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute M aximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS

hitachi mosfet audio

Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Contextual Info: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk135 application note

Abstract: 2sk1058 equivalent k176 2SK2265 2sk135 audio application 2SC1343 2SK186 2sk135 application 2SK135 audio amplifier 2SK317
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TO220CFM

Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
Contextual Info: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D

2sk1058 equivalent

Abstract: 2SK1058 cross reference diode gs1j 2sc1343 2sk186 2SK2265 2SK317 2SJ68 2SK151 2sc1343 hitachi
Contextual Info: Section 5 A bsolute M axim um R atings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute Maximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9