2SK1425
Abstract: EN3563
Text: Ordering number:EN3563 N-Channel Silicon MOSFET 2SK1425 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. unit:mm 2076B
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EN3563
2SK1425
2076B
2SK1425]
2SK1425
EN3563
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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Untitled
Abstract: No abstract text available
Text: 2SK1425 A P A d v a n c e d P e rfo rm a n c e S e rie s 2076 V d ss = 6 0 V IM Channel Power M OSFET £3563 F eatu res • Low ON-state resistance. • Very high-speed switching. • Converters. • Micaless package facilitating easy mounting. A bsolute M axim um R atings at Ta = 25°C
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2SK1425
2SK1425
7151JN
X-6618
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2SK1425
Abstract: EN3563
Text: Ordering number: EN3563 _ 2SK1425 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. • Converters. • Micaless package facilitating easy mounting. Absolute Maximum Ratings at T a= 25°C
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EN3563
2SK1425
EN3563
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SK1411
Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
Text: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2
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2SK1405
2SK1406
2SK1407
2SK1408
2SK1409
700ns.
1250nstyp
2SK1426
140nstyp
2SK1427
2SK1411
2SK1410
2SK1415
2sk1413
180n
2SK141
2SK1420
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Untitled
Abstract: No abstract text available
Text: • AP Series Lineup J-ll Series Existing type V qss = 60V, N-channei Absolute maximum ratings atTa =25°C Type No. Package voss Po* Vqss (V) 2SK1871 Electrical characteristics atTa = 25°C W (W) 15 Vq s (oH) nun to max %6<9R) typftnaxat V e s s H JV W iw*
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2SK1871
2SK1416
2SK1417
2SK1418
2SK1419
2SK1420
2SK1421
2SK1422
2SK1423
2SK1424
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K1412
Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP
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17G7ti
2SK1467
2SK14691
2SK1470
--2SK1471
2SK1472
2SK1473
2SK1474
2SK1475
1800m
K1412
K1413
K1464
K923A
2sk1412 to220ml
AK1052
AK924
2SJ193
2SK1460
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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2sK1413
Abstract: T0220FI Vdss 1500V
Text: SAftYO POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK1416
2SK1417
2SK1418
2SK1419
2SK1420
2SK1421
2SK1871
2SK1422
2SK1423
2SK1424
2sK1413
T0220FI
Vdss 1500V
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Untitled
Abstract: No abstract text available
Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta - 25 O RDSfon ID •VGS Applications Voss CV> V(tff ID (A) PD m Teh CC) VGSS(off) (V> RDS (on) m ax(Q) |Yls| @ VDS - ID ID <A) VGS (V) VDS a ID (A)
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2SK1424
2SK1425
2SK212
2SK2395
2SK304
17Q7ti
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Untitled
Abstract: No abstract text available
Text: SA/im POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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20m/26m
12m/16m
8m/12m
2SK1424
2SK1425
2SK1426
2SK1422
2SK1423
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