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    2SK126 Price and Stock

    ITT Interconnect Solutions DBMY17W2SK126

    Combination Layout D Sub Connector, Combo D D*M, DB-17W2, Receptacle, 17 Contacts - Bulk (Alt: DBMY-17W2S-K126)
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    Avnet Americas DBMY17W2SK126 Bulk 32 Weeks 168
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    ITT Interconnect Solutions DDM-43W2S-K126

    Conn Combo D-Subminiature SKT 41Signal/2Cavity POS Solder Pot ST 43 Terminal 1 Port - Bulk (Alt: DDM-43W2S-K126)
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    Mouser Electronics DDM-43W2S-K126
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    RS DDM-43W2S-K126 Bulk 12 Weeks 99
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    Interstate Connecting Components DDM-43W2S-K126
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    Master Electronics DDM-43W2S-K126
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    ITT Interconnect Solutions DBME-17W2S-K126

    - Bulk (Alt: DBME-17W2S-K126)
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    Avnet Americas DBME-17W2S-K126 Bulk 32 Weeks 168
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    Mouser Electronics DBME-17W2S-K126
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    Interstate Connecting Components DBME-17W2S-K126
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    Master Electronics DBME-17W2S-K126
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    ITT Interconnect Solutions DBM-17W2S-K126

    Conn Combo D-Subminiature SKT 15Signal/2Cavity POS Solder Pot ST 17 Terminal 1 Port - Bulk (Alt: DBM-17W2S-K126)
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    Mouser Electronics DBM-17W2S-K126
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    RS DBM-17W2S-K126 Bulk 12 Weeks 168
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    Interstate Connecting Components DBM-17W2S-K126
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    Master Electronics DBM-17W2S-K126
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    ITT Interconnect Solutions DCM27W2SK126

    Combination Layout D Sub Connector, Combo D D*M Series, DC-27W2, Receptacle, 27 Contacts - Bulk (Alt: DCM-27W2S-K126)
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    Avnet Americas DCM27W2SK126 Bulk 32 Weeks 126
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    PEI Genesis DCM27W2SK126 332 1
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    2SK126 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1260 Unknown FET Data Book Scan PDF
    2SK1260 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1260 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1261 Unknown FET Data Book Scan PDF
    2SK1261 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1261 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1261 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK1262 Unknown FET Data Book Scan PDF
    2SK1262 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1262 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1262 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK1263 Unknown FET Data Book Scan PDF
    2SK1263 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1263 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1263 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK1264 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1264 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1264 Unknown FET Data Book Scan PDF
    2SK1264 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK1265 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2SK126 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1266 Switching Diodes MA199 Silicon epitaxial planer type Unit : mm For high voltage resistance switching circuit +0.2 2.8 –0.3 +0.25 1.5 –0.05 package and automatic mounting +0.2 1.9±0.2 1.45 ● Small 1 3 +0.1 reverse recovery period trr 0.4 –0.05


    Original     		PDF 2SK1266 MA199 100mA

    Untitled

    Abstract: No abstract text available
    Text: 2SK1265 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)


    Original     		PDF 2SK1265

    MA164

    Abstract: MA153 2SK1267 SC-59A
    Text: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 1.45 +0.1 2 MA153 type with reverse wiring series connection +0.1 0.16 –0.06 0.8 1.1 –0.1 +0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		PDF 2SK1267 MA164 MA153 MA164 2SK1267 SC-59A

    Untitled

    Abstract: No abstract text available
    Text: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 M Di ain sc te on na tin nc ue e/ d 2 +0.1 0.16 –0.06 0.8 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo


    Original     		PDF 2SK1267 MA164 MA153

    MA162

    Abstract: F056 MA-150 MA150
    Text: 2SK1267 Switching Diodes MA150, MA161, MA162, MA162A Silicon epitaxial planer type For switching circuits 1 • Features ● Small capacity between pins, Ct ■ Absolute Maximum Ratings Ta= 25˚C Symbol Rating MA150 Repetitive peak reverse voltage MA161


    Original     		PDF 2SK1267 MA150, MA161, MA162, MA162A MA150 MA161 MA162 MA162A F056 MA-150

    Untitled

    Abstract: No abstract text available
    Text: 2SK1262 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)


    Original     		PDF 2SK1262

    m4l marking

    Abstract: No abstract text available
    Text: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current


    Original     		PDF 2SK1267 MA200A m4l marking

    2SK1266

    Abstract: No abstract text available
    Text: 2SK1266 Switching Diodes MA160A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features Short reverse recovery period trr ● Small capacity between pins, Ct


    Original     		PDF 2SK1266 MA160A 2SK1266

    Untitled

    Abstract: No abstract text available
    Text: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 of a soft recovery type 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 ● trr reverse current IR, with extremely small leakage current


    Original     		PDF 2SK1267 MA200A O-236 SC-59 100mA

    Untitled

    Abstract: No abstract text available
    Text: 2SK1267 Power F-MOS FETs 2SK1267 Silicon N-Channel Power F-MOS Unit : mm • Features ON-resistance RDS on : R DS(on)1= 0.07Ω(typ) ■ Applications ● DC-DC converter ● Non-contact ● Solenoid ● Motor 4.0±0.1 4.0±0.1 drive 20.0±0.3 ● Low-voltage


    Original     		PDF 2SK1267 180ns

    2SK1266

    Abstract: No abstract text available
    Text: 2SK1266 Power F-MOS FETs 2SK1266 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : R DS(on)1= 0.08Ω(typ) 2.7±0.2 switching : tf=180ns(typ) secondary breakdown ● Low-voltage 16.7±0.3 ● No 5.5±0.2 drive 4.2±0.2 ● High-speed 4.2±0.2


    Original     		PDF 2SK1266 180ns 2SK1266

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)


    OCR Scan     		PDF 2SK1266 180ns 2SKi266

    2SK1267

    Abstract: SC-65
    Text: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.


    OCR Scan     		PDF 2SK1267 180ns 0D171ba -25tH 2SK1267 SC-65

    TC25H

    Abstract: TI 09T 2SK12 2SK1261
    Text: P o w e r F-MOS FET 2SK1261 2SK1261 Silicon N-channel Power F-M O S FET • P ackage Dim ensions ■ Features • • • • Low ON resistance RDS on : RDS (on) 1 = 0 .1 6 0 (typ.) High switching rate : tf= 56ns (typ.) No secondary breakdown Low voltage drive is possible (VGs = 4V).


    OCR Scan     		PDF 2SK1261 00171Sb TC25H TI 09T 2SK12 2SK1261

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1260 2SK1260 Silicon N-channel Power F-MOS FET Package Dimensions • Features Unit: mm • Low ON resistance Rds on : Rds (on) 1 = 0 .3 1 5 0 (typ.) • High switching rate : tf= 3 8 n s (typ.) • No secondary breakdown • Low voltage drive is possible


    OCR Scan     		PDF 2SK1260

    2SK1263

    Abstract: SC-65 2SK126
    Text: Power F-MOS FET 2SK1263 2SK1263 Silicon N-channel Power F-MOS FET Package Dimensions •Features • • • • Low ON resistance R d s on : R Ds (on) 1 = 0.04ft (typ.) High switching rate : t(= 195ns (typ.) No secondary breakdown High breakdown voltage


    OCR Scan     		PDF 2SK1263 195ns 21VOS-4V Tc-25C i32052 0D171bD 2SK1263 SC-65 2SK126

    2SK1264

    Abstract: 2SK12 H150
    Text: P o w e r F-MOS FET 2SK12Ó4 2SK1264 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) l = 0 . 7 i i (ty p .) Unit: mm • High sw itch in g ra te : tf = 3 6 n s (ty p .) • No seco n d a ry breakdow n


    OCR Scan     		PDF 2SK12Ã 2SK1264 2SK1264 2SK12 H150

    2SK1263

    Abstract: 2SK12 SC-65
    Text: Power F-MOS FET 2SK12Ó3 2SK1263 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON re s is ta n c e R ds on : R DS (on) l = 0 .0 4 f t (ty p .) Unit: mm • H igh sw itch in g r a t e : t i = 195ns (ty p .) 15,5max. • N o se c o n d a ry b re a k d o w n


    OCR Scan     		PDF 2SK12Ã 2SK1263 195ns Tc-25C DD171bD 2SK1263 2SK12 SC-65

    2SK1267

    Abstract: SC-65 D 1169 25
    Text: P ow er F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resista n ce R » o n : R t>; (on) 1 - 0 .0 7 il (typ.) Unt: mm • High sw itching ra te : ti = 180n s (ty p .) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK1267 180ns VW-10V. 2SK1267 SC-65 D 1169 25

    2SK1261

    Abstract: No abstract text available
    Text: 2SK1261 P o w e r F-MOS FET 2SK1261 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • Low ON resistance R Ds on : RDS (on) 1 = 0 .16fl (typ.) • High switching rate : tf=56ns (typ.) • No secondary breakdown Unit: m m • Low voltage drive is possible (VGs = 4V).


    OCR Scan     		PDF 2SK1261 001715b VOS-10V 2SK1261

    2SK126

    Abstract: 2SK1266
    Text: Pow er F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Features • • • • ■ Package Dimensions Low ON resistance RDs on : R DS (on) 1 = 0 .080 (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving ( V g s = 4V)


    OCR Scan     		PDF 2SK1266 180ns O-220 Tc-25-C bT32flS2 DD171bb 2SK126 2SK1266

    2SK1260

    Abstract: JI35
    Text: P o w er F-MOS FET 2SK1260 2S K 1260 Silicon N-channel Power F-M O S FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds (on) l = 0 .3 1 5 ii (typ.) Unit: mm • High switching rate : t f= 3 8 n s (typ.) • No secondary breakdown


    OCR Scan     		PDF 2SK1260 315ii 2SK1260 JI35

    Untitled

    Abstract: No abstract text available
    Text: blE D 44^205 Ü013S77 Sbb • H I T 4 2SK1268,2SK1269 S IL IC O N N -C H A N N EL M O S F E T HIGH SPEED POWER SWITCHING ■ FEATURES • Low O n-R esistance • High S p e e d Sw itching • • • Low Drive C urrent No S eco n d ary Breakdow n Suitable for Sw itching Regulator, DC-DC C onverter


    OCR Scan     		PDF 013S77 2SK1268 2SK1269 2SK1269 2SK1268, 2SK1269-

    2SK1266

    Abstract: No abstract text available
    Text: P o w e r F -M O S F E T 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance Ri„ on : K|,.» (on) 1 = 0 . 0 8 0 (typ.) Unit mm • High switching rate : t , - 180ns (typ.) • No secondary breakdown • For low voltage driving ( V « = 4V)


    OCR Scan     		PDF 2SK1266 180ns O-220 2SK1266