2SK125 Search Results

2SK1258

Abstract: SC-65
Contextual Info: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.

Hitachi DSA002780

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1250

Contextual Info: VXvU-X /\°7 -M 0 S F E T VX S eries Power MOSFET OUTLINE DIMENSIONS 2SK1250 Case MTO-3P [F20W50] 5.0 *<» 500V 20A 2 2 ±0-5 < 3 .3 J K llg l •A *S M [Unit ; m m ] a -y hÏS-5^ ffj — D a te codc (Ciss) on ^ Ö - 3 ' 2.Q *o-3 •K1250 E IA J No. "j9y?9-< Lhm ix

Contextual Info: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type ● SS-Mini type package 3-pin 1 wiring of MA8082 3 M Di ain sc te on na tin nc ue e/ d ● Anode-common Unit : mm 1.60±0.1 0.80±0.05 +0.05 • Features 0.80 0.28±0.05 1.60–0.03

2sk1257

Abstract: 20DRAM CRA-600
Contextual Info: P ow er F-MOS FET 2S K 12 5 7 2SK1257 Silicon N-channel Power F-MOS FET • • • • • ■ P a c k a g e D im ensions F e a tu re s Low ON resistance Rt* on : Rj* (on) 1 = 0 .0 2 4 il (typ.) High switching ra te : 1, = 320ns (typ.) No secondary breakdown

2sk1259

Abstract: MA4Z082WA MA8082
Contextual Info: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type 1 M Di ain sc te on na tin nc ue e/ d type package 3-pin wiring of MA8082 2 +0.05 0.60–0.03 +0.05 0.12–0.02 0.28±0.05 ● Anode-common 3 ue pl d in an c se ed lud pl vi an m m es

MA196

Abstract: "cathode indication"
Contextual Info: 2SK1255 Switching Diodes MA196 Silicon epitaxial planer type Unit : mm For switching circuits f0.45 max. Small capacity between pins, Ct 1st Band 2nd Band • Absolute Maximum Ratings Ta= 25˚C Symbol Rating Unit Forward voltage (DC) VR 50 Repetitive peak reverse voltage

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1254S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25

2SK1257

Abstract: SS3200 TF320
Contextual Info: P o w er F-MOS FET 2SK1257 2S K 1257 Silicon N-channel Power F-M O S F E T • Features ■ Package Dimensions • Low ON r esista n ce Rus on : R DS (on) l = 0 .0 2 4 il (typ.) Unit: mm • H igh sw itch in g r a te : t f= 3 2 0 n s (ty p .) • No s e c o n d a ry b reak d o w n

2SK1258

Abstract: 100-C SC-65 3010F
Contextual Info: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L o w O N r e s i s t a n c e R d s o n : R d s (o n ) 1 = 0 . 0 2 i l ( ty p .) Unit: mm • H ig h s w itc h in g r a t e : ti = 3 5 0 n s ( t y p . )

2SK1254

Abstract: Hitachi DSA00347
Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: m ^bEG S 2SK1253 □ O i a S b 'i M TT « H im S IL IC O N N -C H A N N E L M O S F E T HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device • — Can be driven from 5 V source

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHI 2SK* TO-247

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative

Contextual Info: 2SK1255 Switching Diodes MA3X200F Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 2 0.1 to 0.3 0.4±0.2 Rating Symbol Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V Forward current (DC)

Contextual Info: 2SK1255 Switching Diodes MA142WK Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 high-density mounting Small capacity between pins, Ct 2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating Unit Reverse voltage (DC)

2SK125

Abstract: m2a marking
Contextual Info: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4

M1B marking

Abstract: ma4s159
Contextual Info: 2SK1259 Switching Diodes MA4S159 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features Small S-Mini type 4-pin package Åú Independent 2.0±0.1 1.3±0.1 ● incorporating of two elements, enabling high-density mounting

M2D Package

Abstract: M2D marking "Switching diode" 6pin 2SK125
Contextual Info: 2SK1255 Switching Diodes MA6S121 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features 2.0±0.1 0.65 0.65 ● Small S-Mini type 6-pin package ● Three-element incorporated, enabling high-density mounting ● Flat lead type, with improved mounting efficiency and solderability

2SK1254STL-E

Abstract: 2SK1254L DATA SHEET 2SK1254 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C
Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source

FET 2SK125

Abstract: 2SK125 2SK125 sony K125 1203C 120-3C BW 28
Contextual Info: SONY» 2SK125 Micon N Channel Ju n ctio n F E T • UHF Amplifiers. Mixers Common Gate • PG : 12.5 d8 T yp . (f* 1 0 0 M H r. Common Gate) • NF: I.B d B T yp . (I - 100M H*, Common Gate) • 3rd Harmonic Distortion -5 2 dB T yp . • Analogue Switchings (R q n : * 0 ^ T y p .)

Hitachi DSA001651

Contextual Info: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK125

Abstract: 2SK1254
Contextual Info: 2SK1254 L , 2SK1254 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,