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    2SK11 Search Results

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    2SK11 Price and Stock

    Rochester Electronics LLC 2SK1133(0)-T1B-A

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1133(0)-T1B-A Bulk 8,851 1,803
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    Rochester Electronics LLC 2SK1109(2)-A

    JFET N-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1109(2)-A Bulk 1,700 1,015
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    Rochester Electronics LLC 2SK1152-90L

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1152-90L Bulk 796 137
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    Rochester Electronics LLC 2SK1160-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1160-E Bulk 716 98
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    Rochester Electronics LLC 2SK1154-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1154-E Bulk 460 163
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    Find more 2SK11 price and stock on Findchips.com

    2SK11 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK11 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK11 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK11 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK11 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK11 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK11 Unknown FET Data Book Scan PDF
    2SK11 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK11 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2SK11 Toshiba (2SK11x) N-CHANNEL JFET TRANSISTOR Scan PDF
    2SK11 Toshiba Japanese Transistor Data Book Scan PDF
    2SK11/0 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK110 Unknown FET Data Book Scan PDF
    2SK1100 Unknown FET Data Book Scan PDF
    2SK1101 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1101 Unknown N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1101 Unknown FET Data Book Scan PDF
    2SK1101-01M Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1101-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1101-01MR Fuji Electric N-channel Silicon Power MOSFET Scan PDF
    2SK1101MR Unknown N-CHANNEL SILICON POWER MOS-FET Scan PDF
    ...

    2SK11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL PDF

    transistor 2SK1120

    Abstract: CL226 2SK1120
    Text: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		2SK1120 --300nA transistor 2SK1120 CL226 2SK1120 PDF

    nsi 60 jg

    Abstract: No abstract text available
    Text: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS U n it in mm


    OCR Scan     		2SK1119 300/uA nsi 60 jg PDF

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211 PDF

    2SK117

    Abstract: 2SK117 gr
    Text: T O S H IB A 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. • High |Yfe| : IYfs| = 15mS Typ. (VDS = 10V, v Gs = o) • High Breakdown Voltage 0-45 : V g d S = - 50V


    OCR Scan     		2SK117 2SK117 2SK117 gr PDF

    k1113

    Abstract: 2SK111
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-7r-MOSin 2SK1113 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8 MAX. . 3 , 5.2±0.2 FEATURES : Í V


    OCR Scan     		2SK1113 100uA 20kfl) k1113 2SK111 PDF

    A2149

    Abstract: cnc schematic 2SK1101-01M 2SK series 3dd4 A2148 6aj5
    Text: 2SK1101-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features 'H ig h speed sw itching »Low o n-resistance »No secondary b reakdow n • Low driving p o w er ►High voltage


    OCR Scan     		2SK1101-01M SC-67 0D030Dti A2-150 A2149 cnc schematic 2SK series 3dd4 A2148 6aj5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1152S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1 3.80


    Original     		2SK1152S O-252 PDF

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164 PDF

    2SK1166

    Abstract: 2SK1165
    Text: 2SK1165, 2SK1166 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1


    Original     		2SK1165, 2SK1166 2SK1165 2SK1166 2SK1165 PDF

    2SK1159

    Abstract: 2SK1160
    Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		2SK1159, 2SK1160 220AB 2SK1159 2SK1159 2SK1160 PDF

    2SK1185

    Abstract: FM20
    Text: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 100V, VGS = 0V


    Original     		2SK1185 2SK1185 FM20 PDF

    2SK1167

    Abstract: 2SK1168
    Text: 2SK1167, 2SK1168 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1


    Original     		2SK1167, 2SK1168 2SK1167 2SK1167 2SK1168 PDF

    2SK1181

    Abstract: No abstract text available
    Text: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 8.5 ±52 (Tch ID (pulse) 150ºC) min 500 I D = 250µA, VGS = 0V


    Original     		2SK1181 FM100 2SK1181 PDF

    SLA5038

    Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
    Text: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419


    Original     		2SK1188 2SK1189 2SK2419 2SK1190 2SK2420 2SK1191 2SK2421 2SK1192 2SK1712 2SK1185 SLA5038 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1151 L (S), 2SK1152(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    OCR Scan     		2SK1151 2SK1152 2SK1151 2SK1152 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1101-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S I Outline Drawings • Features • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • V gss = ± 3 0 V G uarantee


    OCR Scan     		2SK1101-01M 1101-01M PDF

    condenser microphone 20hz

    Abstract: 2SK118
    Text: TOSHIBA 2SK118 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE A N D IM PEDANCE CONVERTER A N D CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise


    OCR Scan     		2SK118 100k0, 120Hz) 55MAX. condenser microphone 20hz 2SK118 PDF

    TH12E

    Abstract: 2SK1123 MEI-1202 TEA-1035 esio Nec AC 160
    Text: DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance


    OCR Scan     		2SK1123 2SK1123 IEI-1209) TH12E MEI-1202 TEA-1035 esio Nec AC 160 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1163, 2SK1164 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		2SK1163, 2SK1164 2SK1159, 2SK1160. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1157, 2SK1158 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver


    OCR Scan     		2SK1157, 2SK1158 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1167, 2SK1168 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		2SK1167, 2SK1168 PDF

    2SK1122

    Abstract: TEA-1035 MEI-1202 tf155
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET


    OCR Scan     		2SK1122 2SK1122 IEI-1209) TEA-1035 MEI-1202 tf155 PDF

    2SK1186

    Abstract: FM20
    Text: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±9 A I DSS A VTH 2.0 W Re (yfs) 2.4 ±36 (Tch ID (pulse) 150ºC) 30 (Tc = 25ºC)


    Original     		2SK1186 2SK1186 FM20 PDF