2SK0655 Search Results

Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2

MA408

Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 M Di ain sc te on na tin nc ue e/ d • High-speed switching • Allowing to supply with the radial taping

2SK0655

Abstract: 2SK655
Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si

2SK0655

Abstract: 2SK655
Contextual Info: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 0.45+0.20 –0.10 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage

2SK0655

Abstract: 2SK655 SC-72
Contextual Info: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm 4.0±0.2 3.0±0.2 For switching • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature

2SK0655

Abstract: 2SK655
Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 • High-speed switching • Allowing to supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)