2SJ61 Search Results

2SJ619

Contextual Info: 2SJ619 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2−π−MOSV 2SJ619 ○ スイッチングレギュレータ, DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 単位: mm

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)

2SJ619

Contextual Info: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

2SJ619

Contextual Info: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: Yfs = 7.7 S (typ.)

2SJ616

Abstract: MARKING JW
Contextual Info: Ordering number : ENN7270A 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ616] 4.5 1.6 0.4 1.0 2.5

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)

toshiba marking code transistor

Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ
Contextual Info: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SJ619

Contextual Info: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

2SJ613

Contextual Info: 2SJ613 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 -0.72 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.12 3.44E+03 RDSW WINT 0.62 NFACTOR CDSCD PCLM 1.4 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 2.1E-11 CGDL 3.6E-10 CLC

2SJ618

Abstract: 2SK3497 j618 2SK3497(F)
Contextual Info: 2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSⅤ 2SJ618 High-Power Amplifier Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain-source voltage VDSS −180 V Gate-source voltage VGSS ±20 V ＋0.3 0.6 －0.1

2SJ616

Contextual Info: 2SJ616 Ordering number : EN7270B P-Channel Silicon MOSFET 2SJ616 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

2SJ616

Abstract: TA-100075
Contextual Info: 2SJ616 注文コード No. N 7 2 7 0 B 三洋半導体データシート 半導体データシート No.N7270A をさしかえてください。 2SJ616 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

Marking JW

Abstract: JW Miller 2SJ616 TA-100075 2062a
Contextual Info: Ordering number : ENN7270 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ616] 4.5 1.6 0.4 1.0 2.5

2SJ613

Contextual Info: Ordering number : ENN7296 2SJ613 P-Channel Silicon MOSFET 2SJ613 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ613] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5

2SJ612

Contextual Info: 2SJ612 Ordering number : EN7178B P-Channel Silicon MOSFET 2SJ612 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

2SJ615

Abstract: TA-3846
Contextual Info: 2SJ615 Ordering number : EN7179B P-Channel Silicon MOSFET 2SJ615 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

2SJ618

Abstract: 2SK3497 j618
Contextual Info: 2SJ618 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ618 ○ 低周波電力増幅用 単位: mm VDSS −180 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±20 V DC (注 1) ID −10 A パルス (注 1) ID −30 A (Tc=25℃)

TA-3846

Abstract: 2SJ615 TA384
Contextual Info: 2SJ615 注文コード No. N 7 1 7 9 B 三洋半導体データシート 半導体データシート No.N7179A をさしかえてください。 2SJ615 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) · High forward transfer admittance: |Yfs| = 18 S (typ.)

Contextual Info: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) •

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

2SJ615

Contextual Info: Ordering number : ENN7179A 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ615] 4.5 1.6 0.4 1.0 2.5