2SJ40 Search Results

2SJ402

Contextual Info: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X

J402

Abstract: 2SJ402
Contextual Info: 2SJ402 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ402 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 29 mΩ (標準) z オン抵抗が低い。

J407

Abstract: 2SJ407
Contextual Info: 2SJ407 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ407 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 0.8Ω (標準)

2SJ401

Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance

Contextual Info: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

2SJ408

Abstract: Hitachi DSA001651
Contextual Info: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

Hitachi 2SJ

Abstract: Hitachi DSA001651
Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

2SJ407

Abstract: FAJ 20
Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ407 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 , "Ly

2SJ402

Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance

2SJ405

Abstract: "2063a ITR00497 ITR00498 ITR00499 2063A
Contextual Info: 注文コード No. N 5 5 2 2 A 2SJ405 No. 5 5 2 2 A 三洋半導体ニューズ 52599 新 開発速報 No. ※ 5522 とさしかえてください。 2SJ405 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用

2SJ407

Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ407 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r Low Drain-Source ON Resistance : Rd S(ON)“ 0.8O (Typ.)

transistor j402

Abstract: J402 TOSHIBA
Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance

Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance

J401

Abstract: 2SJ401
Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance

2SJ406

Contextual Info: 2SJ406 注文コード No. N 5 5 2 3 三洋半導体データシート N 2SJ406 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ402

Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) l High forward transfer admittance

2SJ408

Contextual Info: 2SJ408 L , 2SJ408 S Silicon P-Channel MOS FET Application HDPAK 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR 3 <; SILICON P CHANNEL MOS TYPE tt-MOSV I ¿ L Î 1 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •

J402

Abstract: 2SJ402
Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

2SJ409

Abstract: Hitachi 2SJ Hitachi DSA00276
Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET ADE-208-1197 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source

2SJ401

Contextual Info: T O S H IB A 2SJ401 2SJ401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Souree ON Resistance : R d S (ON) — 33 m il (Typ.)

TA-2164

Abstract: it-007 N642 2SJ400
Contextual Info: 注文コード No. N 6 4 2 2 2SJ400 No. N6422 N0199 新 2SJ400 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 ・面実装に対応し工数低減およびセットの高密度 , 小型化が可能となる。

HAT2005F

Abstract: HAT1001F
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SJ408 L 2SJ505(L) 2SJ408(S) 2SJ505(S) HAT1001F